Si tunnel transistors with a novel silicided source and 46mV/dec swing K Jeon, WY Loh, P Patel, CY Kang, J Oh, A Bowonder, C Park, CS Park, ...
2010 Symposium on VLSI Technology, 121-122, 2010
221 2010 Silicon nanotube field effect transistor with core–shell gate stacks for enhanced high-performance operation and area scaling benefits HM Fahad, CE Smith, JP Rojas, MM Hussain
Nano letters 11 (10), 4393-4399, 2011
177 2011 Imaging local electronic corrugations and doped regions in graphene BJ Schultz, CJ Patridge, V Lee, C Jaye, PS Lysaght, C Smith, J Barnett, ...
Nature communications 2 (1), 372, 2011
120 2011 A family of memristor‐based reactance‐less oscillators MA Zidan, H Omran, C Smith, A Syed, AG Radwan, KN Salama
International Journal of Circuit Theory and Applications 42 (11), 1103-1122, 2014
94 2014 Substrate hybridization and rippling of graphene evidenced by near-edge X-ray absorption fine structure spectroscopy V Lee, C Park, C Jaye, DA Fischer, Q Yu, W Wu, Z Liu, J Bao, SS Pei, ...
The journal of physical chemistry letters 1 (8), 1247-1253, 2010
78 2010 Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ...
2007 IEEE Symposium on VLSI Technology, 154-155, 2007
72 2007 Flexible and transparent silicon‐on‐polymer based sub‐20 nm non‐planar 3D FinFET for brain‐architecture inspired computation GAT Sevilla, JP Rojas, HM Fahad, AM Hussain, R Ghanem, CE Smith, ...
Advanced Materials 26 (18), 2794-2799, 2014
71 2014 Cylindrical-shaped nanotube field effect transistor MM Hussain, HM Fahad, CE Smith, JP Rojas
US Patent 9,224,813, 2015
52 2015 Advanced technology for source drain resistance reduction in nanoscale FinFETs CE Smith
University of North Texas, 2008
51 2008 Design and analysis of compact ultra energy-efficient logic gates using laterally-actuated double-electrode NEMS HF Dadgour, MM Hussain, C Smith, K Banerjee
Proceedings of the 47th Design Automation Conference, 893-896, 2010
50 2010 Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow RJW Hill, C Park, J Barnett, J Price, J Huang, N Goel, WY Loh, J Oh, ...
2010 International Electron Devices Meeting, 6.2. 1-6.2. 4, 2010
49 2010 SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION W Stillman, C Donais, S Rumyantsev, M Shur, D Veksler, C Hobbs, ...
International Journal of High Speed Electronics and Systems 20 (01), 27-42, 2011
48 2011 Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- /Metal Gates CMOS FinFETs for Multi- Engineering MM Hussain, CE Smith, HR Harris, CD Young, HH Tseng, R Jammy
IEEE transactions on electron devices 57 (3), 626-631, 2010
48 2010 Simplistic graphene transfer process and its impact on contact resistance MT Ghoneim, CE Smith, MM Hussain
Applied Physics Letters 102 (18), 2013
45 2013 Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET CD Young, MO Baykan, A Agrawal, H Madan, K Akarvardar, C Hobbs, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 18-19, 2011
36 2011 Contact resistance reduction to FinFET source/drain using novel dielectric dipole Schottky barrier height modulation method BE Coss, C Smith, WY Loh, P Majhi, RM Wallace, J Kim, R Jammy
IEEE electron device letters 32 (7), 862-864, 2011
36 2011 Comparison of uniaxial wafer bending and contact-etch-stop-liner stress induced performance enhancement on double-gate FinFETs S Suthram, MM Hussain, HR Harris, C Smith, HH Tseng, R Jammy, ...
IEEE electron device letters 29 (5), 480-482, 2008
34 2008 (1 1 0) and (1 0 0) Sidewall-oriented FinFETs: A performance and reliability investigation CD Young, K Akarvardar, MO Baykan, K Matthews, I Ok, T Ngai, KW Ang, ...
Solid-state electronics 78, 2-10, 2012
30 2012 Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node CE Smith, H Adhikari, SH Lee, B Coss, S Parthasarathy, C Young, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
27 2009 Measurement of high-k and metal film thickness on FinFET sidewalls using scatterometry TG Dziura, B Bunday, C Smith, MM Hussain, R Harris, X Zhang, JM Price
Metrology, Inspection, and Process Control for Microlithography XXII 6922 …, 2008
26 2008