Bhaswar Chakrabarti

Citée par

	Toutes	Depuis 2019
Citations	1314	976
indice h	13	13
indice i10	18	15

220

110

165

20132014201520162017201820192020202120222023202411 32 41 48 85 110 152 201 181 173 220 49

Accès public

Tout afficher

18 articles

3 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Mirko PreziosoUniversity of California, Santa BarbaraAdresse e-mail validée de ece.ucsb.edu
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyAdresse e-mail validée de mse.gatech.edu
Dmitri StrukovProfessor of Electrical and Computer Engineering, University of California, Santa BarbaraAdresse e-mail validée de ece.ucsb.edu
Farnood Merrikh BayatUniversity of California Santa BarbaraAdresse e-mail validée de ece.ucsb.edu
Gina C. AdamAssistant Professor | George Washington UniversityAdresse e-mail validée de gwu.edu
Brian D. HoskinsPhysicist | National Institute of Standards and TechnologyAdresse e-mail validée de nist.gov
Tania RoyDuke UniversityAdresse e-mail validée de duke.edu
Zohreh Razavi HesabiLam ResearchAdresse e-mail validée de lamresearch.com
Corey JoinerGeorgia Institute of TechnologyAdresse e-mail validée de gatech.edu
Miguel LastrasProfessor at Universidad Autónoma de San Luis PotosíAdresse e-mail validée de ece.ucsb.edu
Kwang-Ting (Tim) ChengChair Professor of ECE and CSE, HKUSTAdresse e-mail validée de ust.hk
Andrea PadovaniAssistant Professor, università degli Studi di Modena e Reggio EmiliaAdresse e-mail validée de unimore.it
Luca VandelliPh.D. University Modena and Reggio EmiliaAdresse e-mail validée de unimore.it
Randall FeenstraProfessor of Physics, Carnegie Mellon UniversityAdresse e-mail validée de cmu.edu
Gong Guthe University of Tennessee, KnoxvilleAdresse e-mail validée de utk.edu
Sergio C. de la BarreraAssistant Professor, University of TorontoAdresse e-mail validée de utoronto.ca
Shweta DeoraIIT Bombay, SematechAdresse e-mail validée de sematech.org
Rohit GalatageComponents Research EngineerAdresse e-mail validée de intel.com
Kurtis CantleyBoise State UniversityAdresse e-mail validée de boisestate.edu
Anand SubramaniamUniversity of Texas at DallasAdresse e-mail validée de intel.com

Suivre

Bhaswar Chakrabarti

Assistant Professor, Indian Institute of Technology Madras

Adresse e-mail validée de ee.iitm.ac.in

Nanoscale electronic devices Neuromorphic computation resistive memories oxide electronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits FM Bayat, M Prezioso, B Chakrabarti, H Nili, I Kataeva, D Strukov Nature Communications 9 (1), 2331, 2018	395	2018
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications GC Adam, BD Hoskins, M Prezioso, F Merrikh-Bayat, B Chakrabarti, ... IEEE Transactions on Electron Devices, 1-7, 2016	229	2016
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit B Chakrabarti, MA Lastras-Montaño, G Adam, M Prezioso, B Hoskins, ... Scientific Reports 7, 42429, 2017	111	2017
Random telegraph noise (RTN) in scaled RRAM devices D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ... 51st IEEE international reliability physics symposium (IEEE IRPS), Monterey …, 2013	90	2013
Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions T Roy, L Liu, S de la Barrera, B Chakrabarti, ZR Hesabi, CA Joiner, ... Applied Physics Letters 104 (12), 123506, 2014	67	2014
Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics D Veksler, G Bersuker, B Chakrabarti, E Vogel, S Deora, K Matthews, ... Electron Devices Meeting (IEDM), 2012 IEEE International, 9.6. 1-9.6. 4, 2012	57	2012
Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited Nanolaminate B Chakrabarti, RV Galatage, EM Vogel Electron Device Letters, IEEE 34 (7), 867-869, 2013	48	2013
Cleaning graphene with a titanium sacrificial layer CA Joiner, T Roy, ZR Hesabi, B Chakrabarti, EM Vogel Applied Physics Letters 104 (22), 223109, 2014	45	2014
Memristor-Based Perceptron Classifier: Increasing Complexity and Coping with Imperfect Hardware FM Bayat, M Prezioso, B Chakrabarti, I Kataeva, D Strukov 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 549-554, 2017	43	2017
Nonlinear Switching With Ultralow Reset Power in Graphene-Insulator-Graphene Forming-Free Resistive Memories B Chakrabarti, T Roy, EM Vogel IEEE Electron Device Letters 35 (7), 750-752, 2014	28	2014
Silicon compatible Sn-based resistive switching memory S Sonde, B Chakrabarti, Y Liu, K Sasikumar, J Lin, L Stan, R Divan, ... Nanoscale, 2018	24	2018
Compute in‐Memory with Non‐Volatile Elements for Neural Networks: A Review from a Co‐Design Perspective W Haensch, A Raghunathan, K Roy, B Chakrabarti, CM Phatak, C Wang, ... Advanced Materials, 2204944, 2022	18	2022
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis B Chakrabarti, H Chan, K Alam, A Koneru, TE Gage, LE Ocola, R Divan, ... ACS nano, 2021	16	2021
3D-DPE: A 3D high-bandwidth dot-product engine for high-performance neuromorphic computing MA Lastras-Montaño, B Chakrabarti, DB Strukov, KT Cheng 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2017	13	2017
Highly-uniform multi-layer ReRAM crossbar circuits GC Adam, BD Hoskins, M Prezioso, FM Bayat, B Chakrabarti, DB Strukov Solid-State Device Research Conference (ESSDERC), 2016 46th European, 436-439, 2016	11	2016
Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate B Chakrabarti, EM Vogel Microelectronic Engineering, 2013	11	2013
Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift A Subramaniam, KD Cantley, RA Chapman, B Chakrabarti, EM Vogel Device Research Conference (DRC), 2011 69th Annual, 99-100, 2011	11	2011
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation MR Sk, S Thunder, D Lehninger, Y Raffel, M Lederer, MPM Jank, ... ACS Applied Electronic Materials, 2023	10	2023
Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses S De, Y Raffel, S Thunder, F Müller, M Lederer, T Kaempfe, MSK Rana, ... Authorea Preprints, 2023	9	2023
Asymmetric Resistive Switching of Bilayer HfO_x/AlO_y and AlO_y/HfO_x Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital … P Basnet, EC Anderson, FF Athena, B Chakrabarti, MP West, EM Vogel ACS Applied Electronic Materials, 2023	9	2023

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs