Lionel Trojman
Lionel Trojman
Institut Supérieur d'Electronique de Paris - Isep
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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories
LM Prócel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ...
Journal of Applied Physics 114 (7), 074509, 2013
Electrical characteristics of 8-/spl Aring/EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
LA Ragnarsson, S Severi, L Trojman, KD Johnson, DP Brunco, ...
IEEE transactions on electron devices 53 (7), 1657-1668, 2006
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
RF split capacitance–voltage measurements of short-channel and leaky MOSFET devices
E San Andrés, L Pantisano, J Ramos, S Severi, L Trojman, S De Gendt, ...
IEEE electron device letters 27 (9), 772-774, 2006
Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs
LM Procel, F Crupi, J Franco, L Trojman, B Kaczer
IEEE Electron Device Letters 35 (12), 1167-1169, 2014
On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics
LÅ Ragnarsson, J Mitard, T Kauerauf, A De Keersgieter, T Schram, ...
Proceedings of 2011 International Symposium on VLSI Technology, Systems and …, 2011
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
E Acurio, F Crupi, P Magnone, L Trojman, G Meneghesso, F Iucolano
Solid-State Electronics 132, 49-56, 2017
High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions
LA Ragnarsson, S Severi, L Trojmanm, DP Brunco, KD Johnson, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 234-235, 2005
Mobility and dielectric quality of 1-nm EOT HfSiON on Si (110) and (100)
L Trojman, L Pantisano, I Ferain, S Severi, HE Maes, G Groeseneken
IEEE transactions on electron devices 55 (12), 3414-3420, 2008
DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
V Maccaronio, F Crupi, LM Procel, L Goux, E Simoen, L Trojman, ...
Microelectronic engineering 107, 1-5, 2013
Fundamentals and extraction of velocity saturation in sub-100nm (110)-Si and (100)-Ge
L Pantisano, L Trojman, J Mitard, B Dejaeger, S Severi, G Eneman, ...
2008 Symposium on VLSI Technology, 52-53, 2008
Impact of AlN layer sandwiched between the GaN and the Al2O3 layers on the performance and reliability of recessed AlGaN/GaN MOS-HEMTs
E Acurio, F Crupi, P Magnone, L Trojman, F Iucolano
Microelectronic Engineering 178, 42-47, 2017
Novel, effective and cost-efficient method of introducing fluorine into metal/Hf-based gate stack in MuGFET and planar SOI devices with significant BTI improvement
A Shickova, N Collaert, P Zimmerman, M Demand, E Simoen, G Pourtois, ...
2007 IEEE Symposium on VLSI Technology, 112-113, 2007
Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs
J Franco, B Kaczer, S Mukhopadhyay, P Duhan, P Weckx, PJ Roussel, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.3. 1-15.3. 4, 2016
Velocity and mobility investigation in 1-nm-EOT HfSiON on Si (110) and (100)—Does the dielectric quality matter?
L Trojman, L Pantisano, M Dehan, I Ferain, S Severi, HE Maes, ...
IEEE transactions on electron devices 56 (12), 3009-3017, 2009
Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks
I Ferain, L Pantisano, A Kottantharayil, J Petry, L Trojman, N Collaert, ...
Microelectronic engineering 84 (9-10), 1882-1885, 2007
Reliability improvements in AlGaN/GaN Schottky barrier diodes with a gated edge termination
E Acurio, F Crupi, N Ronchi, B De Jaeger, B Bakeroot, S Decoutere, ...
IEEE Transactions on Electron Devices 65 (5), 1765-1770, 2018
On the Impact of Defects Close to the Gate Electrode on the Low-FrequencyNoise
P Magnone, L Pantisano, F Crupi, L Trojman, C Pace, G Giusi
IEEE electron device letters 29 (9), 1056-1058, 2008
Effectiveness of nitridation of hafnium silicate dielectrics: A comparison between thermal and plasma nitridation
BJ O'Sullivan, VS Kaushik, JL Everaert, L Trojman, LA Ragnarsson, ...
IEEE transactions on electron devices 54 (7), 1771-1775, 2007
Nitrogen incorporation in HfSiO (N)/TaN gate stacks: Impact on performances and NBTI
M Aoulaiche, M Houssa, W Deweerd, L Trojman, T Conard, JW Maes, ...
IEEE electron device letters 28 (7), 613-615, 2007
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