| Growth and characterization of electrodeposited Cu2O thin films S Laidoudi, AY Bioud, A Azizi, G Schmerber, J Bartringer, S Barre, A Dinia Semiconductor science and technology 28 (11), 115005, 2013 | 109 | 2013 |
| Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ... Nature communications 10 (1), 4322, 2019 | 54 | 2019 |
| Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs YA Bioud, A Boucherif, A Belarouci, E Paradis, D Drouin, R Arès Nanoscale research letters 11, 1-8, 2016 | 51 | 2016 |
| Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching YA Bioud, A Boucherif, A Belarouci, E Paradis, S Fafard, V Aimez, ... Electrochimica Acta 232, 422-430, 2017 | 47 | 2017 |
| Tunable conductivity in mesoporous germanium MN Beattie, YA Bioud, DG Hobson, A Boucherif, CE Valdivia, D Drouin, ... Nanotechnology 29 (21), 215701, 2018 | 30 | 2018 |
| Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids YA Bioud, A Boucherif, E Paradis, A Soltani, D Drouin, R Arès arXiv preprint arXiv:1805.05621, 2018 | 11 | 2018 |
| A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon YA Bioud, MN Beattie, A Boucherif, M Jellit, R Stricher, S Ecoffey, ... Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII …, 2019 | 10 | 2019 |
| Shape control of cathodized germanium oxide nanoparticles YA Bioud, E Paradis, A Boucherif, D Drouin, R Arès Electrochemistry Communications 122, 106906, 2021 | 7 | 2021 |
| Voided Ge/Si Platform to Integrate III-V Materials on Si YA Bioud, A Boucherif, M Myronov, G Patriarche, D Drouin, R Arès ECS Transactions 93 (1), 81, 2019 | 6 | 2019 |
| Mesoporous germanium by high frequency bipolar electrochemical etching for optical sensor applications YA Bioud, AA Boucherif, AA Belarouci, EA Paradis, DA Drouin, RA Arès Porous Semiconductors-Science and Technology (PSST) Conference, 2016 | 6 | 2016 |
| III-V Multi-Junction Solar Cells on Si Substrates with a Voided Ge Interface Layer: A Modeling Study MN Beattie, YA Bioud, A Boucherif, D Drouin, R Arés, CE Valdivia, ... 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018 | 4 | 2018 |
| Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling MN Beattie, DG Hobson, CE Valdivia, K Hinzer, YA Bioud, A Boucherif, ... 2017 Photonics North (PN), 1-1, 2017 | 4 | 2017 |
| Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon YA Bioud, A Boucherif, G Patriarche, D Drouin, R Arès AIP Conference Proceedings 2298 (1), 2020 | 3 | 2020 |
| Effect of sintering germanium epilayers on dislocation dynamics: From theory to experimental observation YA Bioud, M Rondeau, A Boucherif, G Patriarche, D Drouin, R Arès Acta Materialia 200, 608-618, 2020 | 3 | 2020 |
| Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy G Kolhatkar, A Boucherif, Y Ataellah Bioud, S Fafard, A Ruediger, ... physica status solidi (b) 253 (5), 918-922, 2016 | 3 | 2016 |
| High-quality Ge/Si virtual substrates fabricated by a low cost and scalable process YA Bioud, A Boucherif, M Myronov, G Patriarche, N Braidy, D Drouin, ... | 2 | 2018 |
| Defects Engineering in Heteroepitaxial Growth of Ge-on-Si: Porous Germanium-based Virtual Substrates for High-Efficiency Photovoltaic Devices YA Bioud Université de Sherbrooke, 2018 | 2 | 2018 |
| Ali belarouci, etienne paradis, Dominique drouin,“MESOPOROUS GERMANIUM BY HIGH FREQUENCY BIOPLAR ELECTROCHEMICAL ETCHING for OPTICAL SENSOR applications,” Porous Semicond YA Bioud, A Boucherif Porous Semicond.-Sci. Technol, 2016 | 2 | 2016 |
| Formation and optimization of mesoporous germanium by bipolar electrochemical etching YA Bioud, A Boucherif, S Fafard, V Aimez, R Arès Inter. Conf. Si Epi. heterostructures. procceding, ICSI9, 130-132, 2015 | 2 | 2015 |
| Ultra-Low Dislocation Ge on Silicon Virtual Substrate: New Insights from Crystal Plasticity Simulations MH Hamza, YA Bioud, A Boucherif, R Arès, S Bedair, TM Hatem Available at SSRN 4079238, 2022 | 1 | 2022 |
