Shon Yadav
Shon Yadav
Adresse e-mail validée de ee.iitm.ac.in
Titre
Citée par
Citée par
Année
A pragmatic approach to modeling self-heating effects in SiGe HBTs
S Yadav, A Chakravorty
IEEE Transactions on Electron Devices 64 (12), 4844-4849, 2017
72017
Modeling of the lateral emitter-current crowding effect in SiGe HBTs
S Yadav, A Chakravorty, M Schroter
IEEE Transactions on Electron Devices 63 (11), 4160-4166, 2016
72016
Small-signal modeling of the lateral NQS effect in SiGe HBTs
S Yadav, A Chakravorty, M Schröter
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 203-206, 2014
72014
Hybrid small-signal π-model for the lateral NQS effect in SiGe HBTs
S Yadav, A Chakravorty, M Schroter
2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 154-157, 2016
22016
An efficient thermal model for multifinger SiGe HBTs under real operating condition
K Nidhin, S Pande, S Yadav, S Balanethiram, DR Nair, S Fregonese, ...
IEEE Transactions on Electron Devices 67 (11), 5069-5075, 2020
12020
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part II-Experimental Validation
A Gupta, K Nidhin, S Balanethiram, S Yadav, A Chakravorty, S Fregonese, ...
Electronics 9 (9), 1365, 2020
12020
Static Thermal Coupling Factors in Multi-Finger Bipolar Transistors: Part I—Model Development
A Gupta, K Nidhin, S Balanethiram, S Yadav, A Chakravorty, S Fregonese, ...
Electronics 9 (9), 1333, 2020
12020
Hybrid two-section model for the small-signal current crowding effect in SiGe HBTs
S Yadav, A Chakravorty
IEEE International Conference on Emerging Electronics (ICEE), 2016
2016
Analysis and implementation of the π- and extended π-EC models for lateral NQS effect in SiGe HBTs
S Yadav, A Chakravorty
International Workshop on Physics of Semiconductor Devices (IWPSD), 2015
2015
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–9