Jonathan Goss
Jonathan Goss
Electrical and Electronic Engineering, Newcastle University, UK
Verified email at ncl.ac.uk - Homepage
Title
Cited by
Cited by
Year
Theory of Li in ZnO: A limitation for Li-based p-type doping
MG Wardle, JP Goss, PR Briddon
Physical Review B 71 (15), 155205, 2005
3702005
The twelve-line 1.682 eV luminescence center in diamond and the vacancy-silicon complex
JP Goss, R Jones, SJ Breuer, PR Briddon, S Öberg
Physical review letters 77 (14), 3041, 1996
3521996
First-principles study of the diffusion of hydrogen in ZnO
MG Wardle, JP Goss, PR Briddon
Physical review letters 96 (20), 205504, 2006
2292006
Theory of hydrogen in diamond
JP Goss, R Jones, MI Heggie, CP Ewels, PR Briddon, S Öberg
Physical Review B 65 (11), 115207, 2002
1732002
Vacancy-impurity complexes and limitations for implantation doping of diamond
JP Goss, PR Briddon, MJ Rayson, SJ Sque, R Jones
Physical Review B 72 (3), 035214, 2005
1512005
Donor and acceptor states in diamond
JP Goss, PR Briddon, R Jones, S Sque
Diamond and related materials 13 (4-8), 684-690, 2004
1442004
p-type doping of graphene with F4-TCNQ
H Pinto, R Jones, JP Goss, PR Briddon
Journal of Physics: Condensed Matter 21 (40), 402001, 2009
1292009
Theory of Fe, Co, Ni, Cu, and their complexes with hydrogen in ZnO
MG Wardle, JP Goss, PR Briddon
Physical Review B 72 (15), 155108, 2005
1192005
Vibrational modes and electronic properties of nitrogen defects in silicon
JP Goss, I Hahn, R Jones, PR Briddon, S Öberg
Physical Review B 67 (4), 045206, 2003
1052003
Extended defects in diamond: the interstitial platelet
JP Goss, BJ Coomer, R Jones, CJ Fall, PR Briddon, S Öberg
Physical review B 67 (16), 165208, 2003
1042003
Marker-method calculations for electrical levels using Gaussian-orbital basis sets
JPGMJ Shaw, PR Briddon
Theory of defects in semiconductors, 69-94, 2007
1022007
Theory of boron aggregates in diamond: First-principles calculations
JP Goss, PR Briddon
Physical Review B 73 (8), 085204, 2006
952006
Identification of the structure of the 3107 cm− 1 H-related defect in diamond
JP Goss, PR Briddon, V Hill, R Jones, MJ Rayson
Journal of Physics: Condensed Matter 26 (14), 145801, 2014
922014
Theory of hydrogen in diamond
JP Goss
Journal of Physics: Condensed Matter 15 (17), R551, 2003
872003
Shallow donors in diamond: Chalcogens, pnictogens, and their hydrogen complexes
SJ Sque, R Jones, JP Goss, PR Briddon
Physical review letters 92 (1), 017402, 2004
832004
Interstitial aggregates and a new model for the I1/W optical centre in silicon
BJ Coomer, JP Goss, R Jones, S Öberg, PR Briddon
Physica B: Condensed Matter 273, 505-508, 1999
831999
Identification of the tetra-interstitial in silicon
BJ Coomer, JP Goss, R Jones, S Öberg, PR Briddon
Journal of Physics: Condensed Matter 13 (1), L1, 2001
822001
Self-interstitial aggregation in diamond
JP Goss, BJ Coomer, R Jones, TD Shaw, PR Briddon, M Rayson, S Öberg
Physical Review B 63 (19), 195208, 2001
782001
Identification of the hydrogen-saturated self-interstitials in silicon and germanium
M Budde, BB Nielsen, P Leary, J Goss, R Jones, PR Briddon, S Öberg, ...
Physical Review B 57 (8), 4397, 1998
781998
Density functional simulations of silicon-containing point defects in diamond
JP Goss, PR Briddon, MJ Shaw
Physical Review B 76 (7), 075204, 2007
732007
The system can't perform the operation now. Try again later.
Articles 1–20