| ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model S Khandelwal, YS Chauhan, TA Fjeldly, S Ghosh, A Pampori, D Mahajan, ... IEEE Transactions on Electron Devices 66 (1), 80-86, 2018 | 116 | 2018 |
| A new small-signal parameter extraction technique for large gate-periphery GaN HEMTs SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan IEEE Microwave and Wireless Components Letters 27 (10), 918-920, 2017 | 24 | 2017 |
| Electrical characterization and modeling of GaN HEMTs at cryogenic temperatures MS Nazir, P Kushwaha, A Pampori, SA Ahsan, YS Chauhan IEEE Transactions on Electron Devices 69 (11), 6016-6022, 2022 | 10 | 2022 |
| Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs AUH Pampori, SA Ahsan, YS Chauhan IEEE Transactions on Electron Devices 69 (5), 2275-2281, 2022 | 10 | 2022 |
| Modeling of bias-dependent effective velocity and its impact on saturation transconductance in AlGaN/GaN HEMTs AUH Pampori, SA Ahsan, R Dangi, U Goyal, SK Tomar, M Mishra, ... IEEE Transactions on Electron Devices 68 (7), 3302-3307, 2021 | 10 | 2021 |
| S-band gan based power amplifier with symmetric matching network M Zaid, A Pampori, R Dangi, YS Chauhan 2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical …, 2022 | 5 | 2022 |
| Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan IEEE Journal of the Electron Devices Society 9, 789-797, 2021 | 5 | 2021 |
| A low noise power amplifier MMIC to mitigate co-site interference in 5G front end modules N Bajpai, A Pampori, P Maity, M Shah, A Das, YS Chauhan IEEE Access 9, 124900-124909, 2021 | 5 | 2021 |
| 16 watt s-band gan based power amplifier using replicating stages M Zaid, A Pampori, YS Chauhan 2022 IEEE 9th Uttar Pradesh Section International Conference on Electrical …, 2022 | 4 | 2022 |
| A width-scalable SPICE compact model for GaN HEMTs including self-heating effect R Dangi, A Pampori, P Kushwaha, E Yadav, S Sinha, YS Chauhan 2022 Device Research Conference (DRC), 1-2, 2022 | 4 | 2022 |
| Physics-based compact modeling of MSM-2DEG GaN-based varactors for THz applications AUH Pampori, SA Ahsan, S Ghosh, S Khandelwal, YS Chauhan 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018 | 4 | 2018 |
| A comprehensive rf characterization and modeling methodology for the 5nm technology node finfets SS Parihar, A Pampori, P Dwivedi, J Huang, W Wang, K Imura, C Hu, ... IEEE Journal of the Electron Devices Society, 2023 | 1 | 2023 |
| Characterization and modeling of IV, CV and trapping behavior of SiC power MOSFETs MS Nazir, A Pampori, YH Zarkob, A Kar, YS Chauhan 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 1 | 2023 |
| A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications MH Ansari, R Dangi, A Pampori, P Kushwaha, E Yadav, S Sinha, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 1 | 2023 |
| Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability M Zaid, P Kumari, A Pampori, MS Nazir, U Goyal, M Mishra, YS Chauhan IEEE Access, 2024 | | 2024 |
| GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance M Zaid, A Pampori, MS Nazir, YS Chauhan Microelectronics Journal 145, 106129, 2024 | | 2024 |
| High Efficiency and High Linearity GaN Power Amplifier with Harmonic Tuning and Fundamental Matching Networks M Zaid, A Pampori, MS Nazir, YS Chauhan 2023 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 1-4, 2023 | | 2023 |
| A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With off-State Harmonic Control A Pampori, MS Nazir, R Dangi, ML Chou, GY Lee, YS Chauhan IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT R Dangi, A Pampori, P Pal, YS Chauhan IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Compact SPICE Modeling of Application-Specific AlGaN/GaN HEMTs AUH Pampori INDIAN INSTITUTE OF TECHNOLOGY KANPUR, 2023 | | 2023 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurAdresse e-mail validée de iitk.ac.in
