Hexagonal boron nitride is an indirect bandgap semiconductor G Cassabois, P Valvin, B Gil
Nature photonics 10 (4), 262-266, 2016
1210 2016 Photonics with hexagonal boron nitride JD Caldwell, I Aharonovich, G Cassabois, JH Edgar, B Gil, DN Basov
Nature Reviews Materials 4 (8), 552-567, 2019
700 2019 Ultrafast carrier dynamics in single-wall carbon nanotubes JS Lauret, C Voisin, G Cassabois, C Delalande, P Roussignol, O Jost, ...
Physical review letters 90 (5), 057404, 2003
474 2003 Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot A Berthelot, I Favero, G Cassabois, C Voisin, C Delalande, P Roussignol, ...
Nature Physics 2 (11), 759-764, 2006
294 2006 Direct band-gap crossover in epitaxial monolayer boron nitride C Elias, P Valvin, T Pelini, A Summerfield, CJ Mellor, TS Cheng, L Eaves, ...
Nature communications 10 (1), 2639, 2019
234 2019 Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots I Favero, G Cassabois, R Ferreira, D Darson, C Voisin, J Tignon, ...
Physical Review B 68 (23), 233301, 2003
216 2003 Efficient single photon emission from a high-purity hexagonal boron nitride crystal LJ Martínez, T Pelini, V Waselowski, JR Maze, B Gil, G Cassabois, ...
Physical review B 94 (12), 121405, 2016
214 2016 Ultra-coherent single photon source HS Nguyen, G Sallen, C Voisin, P Roussignol, C Diederichs, G Cassabois
Applied Physics Letters 99 (26), 2011
146 2011 Line narrowing in single semiconductor quantum dots: Toward the control of environment effects C Kammerer, C Voisin, G Cassabois, C Delalande, P Roussignol, F Klopf, ...
Physical Review B 66 (4), 041306, 2002
144 2002 Photoluminescence Up-Conversion in Single Self-Assembled Quantum Dots C Kammerer, G Cassabois, C Voisin, C Delalande, P Roussignol, ...
Physical review letters 87 (20), 207401, 2001
132 2001 Optically gated resonant emission of single quantum dots HS Nguyen, G Sallen, C Voisin, P Roussignol, C Diederichs, G Cassabois
Physical review letters 108 (5), 057401, 2012
124 2012 Single artificial atoms in silicon emitting at telecom wavelengths W Redjem, A Durand, T Herzig, A Benali, S Pezzagna, J Meijer, ...
Nature Electronics 3 (12), 738-743, 2020
123 2020 Interferometric correlation spectroscopy in single quantum dots C Kammerer, G Cassabois, C Voisin, M Perrin, C Delalande, ...
Applied Physics Letters 81 (15), 2737-2739, 2002
121 2002 Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes S Berger, C Voisin, G Cassabois, C Delalande, P Roussignol, X Marie
Nano letters 7 (2), 398-402, 2007
120 2007 Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy TQP Vuong, G Cassabois, P Valvin, E Rousseau, A Summerfield, ...
2D Materials 4 (2), 021023, 2017
119 2017 Isotope engineering of van der Waals interactions in hexagonal boron nitride TQP Vuong, S Liu, A Van der Lee, R Cuscó, L Artús, T Michel, P Valvin, ...
Nature materials 17 (2), 152-158, 2018
115 2018 Temperature dependence of the zero-phonon linewidth in quantum dots: An effect of the fluctuating environment I Favero, A Berthelot, G Cassabois, C Voisin, C Delalande, P Roussignol, ...
Physical Review B 75 (7), 073308, 2007
114 2007 Phonon-photon mapping in a color center in hexagonal boron nitride TQP Vuong, G Cassabois, P Valvin, A Ouerghi, Y Chassagneux, C Voisin, ...
Physical review letters 117 (9), 097402, 2016
104 2016 Temperature dependence of Raman-active phonons and anharmonic interactions in layered hexagonal BN R Cuscó, B Gil, G Cassabois, L Artús
Physical Review B 94 (15), 155435, 2016
88 2016 Broad diversity of near-infrared single-photon emitters in silicon A Durand, Y Baron, W Redjem, T Herzig, A Benali, S Pezzagna, J Meijer, ...
Physical Review Letters 126 (8), 083602, 2021
87 2021