Cobalt oxide based gas sensors on silicon substrate for operation at low temperatures J Wöllenstein, M Burgmair, G Plescher, T Sulima, J Hildenbrand, ...
Sensors and Actuators B: Chemical 93 (1-3), 442-448, 2003
275 2003 P-channel tunnel field-effect transistors down to sub-50 nm channel lengths KK Bhuwalka, M Born, M Schindler, M Schmidt, T Sulima, I Eisele
Japanese journal of applied physics 45 (4S), 3106, 2006
131 2006 Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- M Schlosser, KK Bhuwalka, M Sauter, T Zilbauer, T Sulima, I Eisele
IEEE transactions on electron devices 56 (1), 100-108, 2008
119 2008 Boron in mesoporous Si—where have all the carriers gone? G Polisski, D Kovalev, G Dollinger, T Sulima, F Koch
Physica B: Condensed Matter 273, 951-954, 1999
80 1999 Tunnel FET: A CMOS device for high temperature applications M Born, KK Bhuwalka, M Schindler, U Abelein, M Schmidt, T Sulima, ...
2006 25th international conference on microelectronics, 124-127, 2006
76 2006 Improved reliability by reduction of hot-electron damage in the vertical impact-ionization MOSFET (I-MOS) U Abelein, M Born, KK Bhuwalka, M Schindler, M Schlosser, T Sulima, ...
IEEE electron device letters 28 (1), 65-67, 2006
65 2006 A novel vertical impact ionisation MOSFET (I-MOS) concept U Abelein, M Born, KK Bhuwalka, M Schindler, M Schmidt, T Sulima, ...
2006 25th International Conference on Microelectronics, 121-123, 2006
43 2006 Performance improvement in vertical surface tunneling transistors by a boron surface phase W Hansch, P Borthen, J Schulze, C Fink, T Sulima, I Eisele
Japanese Journal of Applied Physics 40 (5R), 3131, 2001
41 2001 Doping profile dependence of the vertical impact ionization MOSFET’s (I-MOS) performance U Abelein, A Assmuth, P Iskra, M Schindler, T Sulima, I Eisele
Solid-state electronics 51 (10), 1405-1411, 2007
38 2007 Annealing and deposition effects of the chemical composition of silicon-rich nitride KN Andersen, WE Svendsen, T Stimpel-Lindner, T Sulima, ...
Applied surface science 243 (1-4), 401-408, 2005
38 2005 The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning A Aßmuth, T Stimpel-Lindner, O Senftleben, A Bayerstadler, T Sulima, ...
Applied surface science 253 (20), 8389-8393, 2007
37 2007 Measurement of short-lived radon progenies by simultaneous αγ-spectrometry at the German radon reference chamber A Paul, S Röttger, A Honig, T Sulima, A Buchholz, U Keyser
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1999
33 1999 Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology V Capodieci, F Wiest, T Sulima, J Schulze, I Eisele
Microelectronics Reliability 45 (5-6), 937-940, 2005
26 2005 Vertical 40 nm impact ionization MOSFET (I-MOS) for high temperature applications U Abelein, A Assmuth, P Iskra, M Reinl, M Schlosser, T Sulima, I Eisele
2008 26th International Conference on Microelectronics, 287-290, 2008
24 2008 Phonon assisted tunneling in gated pin diodes S Sedlmaier, J Schulze, T Sulima, C Fink, C Tolksdorf, A Bayerstadler, ...
Materials Science and Engineering: B 89 (1-3), 116-119, 2002
20 2002 Growth and modification of thin a-Si: H/a-Ge: H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing S Chiussi, F Gontad, R Rodríguez, C Serra, J Serra, B León, T Sulima, ...
Applied surface science 254 (19), 6030-6033, 2008
17 2008 Dopant diffusion during rapid thermal oxidation A Stadler, T Sulima, J Schulze, C Fink, A Kottantharayil, W Hansch, ...
Solid-State Electronics 44 (5), 831-835, 2000
17 2000 Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si (100) and Si (111) J Schulze, C Fink, T Sulima, I Eisele, W Hansch
Thin solid films 380 (1-2), 154-157, 2000
14 2000 The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium J Schulze, H Baumgärtner, C Fink, G Dollinger, I Gentchev, L Görgens, ...
Thin Solid Films 369 (1-2), 10-15, 2000
14 2000 Iridium oxide as low temperature NO/sub 2/-sensitive material for work function-based gas sensors A Karthigeyan, RP Gupta, K Scharnagl, M Burgmair, M Zimmer, T Sulima, ...
IEEE Sensors Journal 4 (2), 189-194, 2004
13 2004 