George Dimitrakopulos
George Dimitrakopulos
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Direct comparison of catalyst-free and catalyst-induced GaN nanowires
C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ...
Nano Research 3 (7), 528-536, 2010
Properties of GaN nanowires grown by molecular beam epitaxy
L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfueller, S Münch, ...
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011
Axial and radial growth of Ni-induced GaN nanowires
L Geelhaar, C Cheze, WM Weber, R Averbeck, H Riechert, T Kehagias, ...
Applied Physics Letters 91 (9), 093113, 2007
High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy
E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ...
Nanoscale 7 (17), 7896-7905, 2015
Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy
T Kehagias, GP Dimitrakopulos, J Kioseoglou, H Kirmse, C Giesen, ...
Applied Physics Letters 95 (7), 071905, 2009
Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution
H Faber, S Das, YH Lin, N Pliatsikas, K Zhao, T Kehagias, ...
Science advances 3 (3), e1602640, 2017
Incineration of tannery sludge under oxic and anoxic conditions: study of chromium speciation
P Kavouras, E Pantazopoulou, S Varitis, G Vourlias, K Chrissafis, ...
Journal of Hazardous Materials 283, 672-679, 2015
Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy
SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ...
Applied Physics Letters 95 (2), 021913, 2009
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
T Kehagias, GP Dimitrakopulos, P Becker, J Kioseoglou, F Furtmayr, ...
Nanotechnology 24 (43), 435702, 2013
Study of fully epitaxial Fe/Pt bilayers for spin pumping by ferromagnetic resonance spectroscopy
A Conca, S Keller, L Mihalceanu, T Kehagias, GP Dimitrakopulos, ...
Physical Review B 93 (13), 134405, 2016
Optical encoding by plasmon-based patterning: hard and inorganic materials become photosensitive
A Siozios, DC Koutsogeorgis, E Lidorikis, GP Dimitrakopulos, T Kehagias, ...
Nano letters 12 (1), 259-263, 2012
Dislocation core investigation by geometric phase analysis and the dislocation density tensor
J Kioseoglou, GP Dimitrakopulos, P Komninou, T Karakostas, EC Aifantis
Journal of Physics D: Applied Physics 41 (3), 035408, 2008
Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric
P Tsipas, E Xenogiannopoulou, S Kassavetis, D Tsoutsou, E Golias, ...
ACS nano 8 (7), 6614-6619, 2014
Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron …
I Isakov, H Faber, M Grell, G Wyatt‐Moon, N Pliatsikas, T Kehagias, ...
Advanced Functional Materials 27 (22), 1606407, 2017
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
C Bazioti, E Papadomanolaki, T Kehagias, T Walther, ...
Journal of Applied Physics 118 (15), 155301, 2015
The defect character of GaN growth on -plane sapphire
J Smalc-Koziorowska, G Tsiakatouras, A Lotsari, A Georgakilas, ...
Journal of Applied Physics 107 (7), 073525, 2010
Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN
GP Dimitrakopulos, P Komninou, J Kioseoglou, T Kehagias, ...
Physical Review B 64 (24), 245325, 2001
Misfit dislocations and antiphase domain boundaries in GaAs/Si interface
P Komninou, J Stoemenos, GP Dimitrakopulos, T Karakostas
Journal of applied physics 75 (1), 143-152, 1994
Topological analysis of defects in epitaxial nitride films and interfaces
GP Dimitrakopulos, P Komninou, RC Pond
physica status solidi (b) 227 (1), 45-92, 2001
Atomic structures and energies of partial dislocations in wurtzite GaN
J Kioseoglou, GP Dimitrakopulos, P Komninou, T Karakostas
Physical Review B 70 (3), 035309, 2004
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