Suivre
Andrew G. Norman
Titre
Citée par
Citée par
Année
PbTe colloidal nanocrystals: synthesis, characterization, and multiple exciton generation
JE Murphy, MC Beard, AG Norman, SP Ahrenkiel, JC Johnson, P Yu, ...
Journal of the American Chemical Society 128 (10), 3241-3247, 2006
8622006
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
JF Geisz, DJ Friedman, JS Ward, A Duda, WJ Olavarria, TE Moriarty, ...
Applied Physics Letters 93 (12), 2008
6312008
Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration
JF Geisz, RM France, KL Schulte, MA Steiner, AG Norman, HL Guthrey, ...
Nature energy 5 (4), 326-335, 2020
6142020
Nanocrystalline TiO2 Solar Cells Sensitized with InAs Quantum Dots
P Yu, K Zhu, AG Norman, S Ferrere, AJ Frank, AJ Nozik
The Journal of Physical Chemistry B 110 (50), 25451-25454, 2006
5562006
An artificial interphase enables reversible magnesium chemistry in carbonate electrolytes
SB Son, T Gao, SP Harvey, KX Steirer, A Stokes, A Norman, C Wang, ...
Nature Chemistry 10 (5), 532-539, 2018
3772018
Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In, Ga) As/Ga (As, P) quantum dot solar cells
V Popescu, G Bester, MC Hanna, AG Norman, A Zunger
Physical review B 78 (20), 205321, 2008
2892008
Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates
AG Norman, AJ Ptak
US Patent 8,507,365, 2013
2252013
Combinatorial insights into doping control and transport properties of zinc tin nitride
AN Fioretti, A Zakutayev, H Moutinho, C Melamed, JD Perkins, ...
Journal of Materials Chemistry C 3, 11017-11028, 2015
1632015
Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid‐phase epitaxial (001) GaInAsP layers
AG Norman, GR Booker
Journal of applied physics 57 (10), 4715-4720, 1985
1481985
Mechanism for CuPt-type ordering in mixed III–V epitaxial layers
BA Philips, AG Norman, TY Seong, S Mahajan, GR Booker, M Skowronski, ...
Journal of crystal growth 140 (3-4), 249-263, 1994
1281994
TED, TEM and HREM studies of atomic ordering in AlxIn1-xAs epitaxial layers grown by OMVPE
AG Norman, RE Mallard, IJ Murgatroyd, GR Booker, AH Moore, MD Scott
Inst. Phys. Conf. Ser 87, 77-82, 1987
121*1987
Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1-ySby layers: Possible relationship to surface reconstruction occurring during layer growth
IJ Murgatroyd, AG Norman, GR Booker
Journal of applied physics 67 (5), 2310-2319, 1990
1191990
BGaInAs alloys lattice matched to GaAs
JF Geisz, DJ Friedman, JM Olson, SR Kurtz, RC Reedy, AB Swartzlander, ...
Applied Physics Letters 76 (11), 1443-1445, 2000
1172000
Lattice-mismatched GaAsP solar cells grown on silicon by OMVPE
JF Geisz, JM Olson, MJ Romero, CS Jiang, AG Norman
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World …, 2006
1152006
Tandem Heterogeneous Catalysis for Polyethylene Depolymerization via an Olefin-Intermediate Process
LD Ellis, SV Orski, GA Kenlaw, AG Norman, KL Beers, Y Román-Leshkov, ...
ACS Sustainable Chemistry & Engineering, 2021
962021
Effects of Disorder on Carrier Transport in Cu2SnS3
L Baranowski, K McLaughlin, P Zawadzki, S Lany, A Norman, H Hempel, ...
Physical Review Applied 4, 044017, 2015
962015
Electronic structure of self-organized InAs/GaAs quantum dots bounded by {136} facets
W Yang, H Lee, TJ Johnson, PC Sercel, AG Norman
Physical Review B 61 (4), 2784, 2000
832000
Structural studies of natural superlattices in group III-V alloy epitaxial layers
AG Norman, TY Seong, IT Ferguson, GR Booker, BA Joyce
Semiconductor Science and Technology 8 (1S), S9, 1993
831993
Dielectric function spectra and critical-point energies of Cu2ZnSnSe4 from 0.5 to 9.0 eV
SG Choi, HY Zhao, C Persson, CL Perkins, AL Donohue, B To, ...
Journal of Applied Physics 111 (3), 033506-033506-6, 2012
802012
Atomic ordering and phase separation in MBE GaAs1-xBix
AG Norman, R France, AJ Ptak
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2011
802011
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20