A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process X Chen, S Samavedam, V Narayanan, K Stein, C Hobbs, C Baiocco, W Li, ...
2008 Symposium on VLSI Technology, 88-89, 2008
130 2008 A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ...
2011 IEEE International Electron Devices Meeting (IEDM), 28.1.1 - 28.1.4, 2011
129 2011 32nm general purpose bulk CMOS technology for high performance applications at low voltage F Arnaud, J Liu, YM Lee, KY Lim, S Kohler, J Chen, BK Moon, CW Lai, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
84 2008 Competitive and cost effective high-k based 28nm CMOS technology for low power applications F Arnaud, A Thean, M Eller, M Lipinski, YW Teh, M Ostermayr, K Kang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
67 2009 Scaling of 32nm low power SRAM with high-K metal gate HS Yang, R Wong, R Hasumi, Y Gao, NS Kim, DH Lee, S Badrudduza, ...
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
66 2008 Asymmetric channel MOSFET X Chen, J Deng, W Li, DR Nair, JE Park, D Tekleab, X Yuan, NS Kim
US Patent 8,237,197, 2012
40 2012 Method of manufacturing a body-contacted SOI FINFET N Kanike, DR Nair
US Patent 8,993,402, 2015
30 2015 Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters DR Nair, S Mahapatra, S Shukuri, JD Bude
IEEE Transactions on Electron Devices 51 (5), 701-707, 2004
30 2004 Piezoelectric-on-Silicon Array Resonators With Asymmetric Phononic Crystal Tethering U Rawat, DR Nair, A DasGupta
Journal of Microelectromechanical Systems 26 (4), 773-781, 2017
24 2017 Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET VA Tiwari, D Jaeger, A Scholze, DR Nair
IEEE Transactions on Electron Devices, 61 (5), 1270 - 1277, 2014
20 2014 Compact Modeling of Proximity Effect in High- J Sathyasree, V Vanukuru, D Nair, A Chakravorty
IEEE Electron Device Letters 39 (4), 588-590, 2018
19 2018 A Scalable, Broadband, and Physics-Based Model for On-Chip Rectangular Spiral Inductors SS Jayaraman, V Vanukuru, D Nair, A Chakravorty
IEEE Transactions on Magnetics 55 (9), 1-6, 2019
18 2019 Study of the Effect of Surface Roughness on the Performance of RF MEMS Capacitive Switches Through 3-D Geometric Modeling S Gopalakrishnan, A Dasgupta, DR Nair
IEEE Journal of the Electron Devices Society 4 (6), 451-458, 2016
18 2016 Novel RF MEMS capacitive switches with design flexibility for multi-frequency operation S Gopalakrishnan, A DasGupta, DR Nair
Journal of Micromechanics and Microengineering 27 (9), 095013, 2017
17 2017 Oxygen scavenging spacer for a gate electrode MP Chudzik, DR Nair, V Narayanan, CJ Radens, JM Shah
US Patent 9,059,211, 2015
16 2015 Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputtering A Das, M Rath, DR Nair, MSR Rao, A DasGupta
Applied Surface Science 550, 149308, 2021
14 2021 Design, fabrication and characterization of RF MEMS shunt switch for wideband operation of 3 GHz to 30 GHz A Swarnkar, A DasGupta, DR Nair
Journal of Micromechanics and Microengineering 29 (11), 115009, 2019
13 2019 A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations J Sathyasree, V Vanukuru, DR Nair, A Chakravorty
IEEE Transactions on Electron Devices 66 (1), 802-805, 2018
13 2018 CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling and technological parameters NR Mohapatra, DR Nair, S Mahapatra, V Ramgopal Rao, S Shukuri, ...
Electron Devices, IEEE Transactions on 50 (10), 2104-2111, 2003
13 2003 New layout dependency in high-k/Metal Gate MOSFETs M Hamaguchi, D Nair, D Jaeger, H Nishimura, W Li, MH Na, C Bernicot, ...
2011 IEEE International Electron Devices Meeting (IEDM), 25.6.1 - 25.6.4, 2011
12 2011 