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On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying B Traoré, P Blaise, E Vianello, H Grampeix, S Jeannot, L Perniola, ... IEEE Transactions on Electron Devices 62 (12), 4029-4036, 2015 | 89 | 2015 |
Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses D Garbin, O Bichler, E Vianello, Q Rafhay, C Gamrat, L Perniola, ... 2014 IEEE international electron devices meeting, 28.4. 1-28.4. 4, 2014 | 89 | 2014 |
3D Sequential Integration: Application-driven technological achievements and guidelines P Batude, L Brunet, C Fenouillet-Beranger, F Andrieu, JP Colinge, ... 2017 IEEE International Electron Devices Meeting (IEDM), 3.1. 1-3.1. 4, 2017 | 87 | 2017 |
Fully integrated spiking neural network with analog neurons and RRAM synapses A Valentian, F Rummens, E Vianello, T Mesquida, CLM de Boissac, ... 2019 IEEE International Electron Devices Meeting (IEDM), 14.3. 1-14.3. 4, 2019 | 73 | 2019 |
Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAM A Grossi, E Vianello, C Zambelli, P Royer, JP Noel, B Giraud, L Perniola, ... IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018 | 73 | 2018 |
Digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays T Hirtzlin, M Bocquet, B Penkovsky, JO Klein, E Nowak, E Vianello, ... Frontiers in neuroscience 13, 1383, 2020 | 72 | 2020 |
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