Guillaume Saint-Girons
Guillaume Saint-Girons
Directeur de recherches CNRS
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Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power
A Garnache, S Hoogland, AC Tropper, I Sagnes, G Saint-Girons, ...
Applied Physics Letters 80 (21), 3892-3894, 2002
Epitaxy of BaTiO3 thin film on Si (0 0 1) using a SrTiO3 buffer layer for non-volatile memory application
G Niu, S Yin, G Saint-Girons, B Gautier, P Lecoeur, V Pillard, G Hollinger, ...
Microelectronic Engineering 88 (7), 1232-1235, 2011
Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots
M Elkurdi, P Boucaud, S Sauvage, O Kermarrec, Y Campidelli, ...
Applied Physics Letters 80 (3), 509-511, 2002
Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation
G Niu, G Saint-Girons, B Vilquin, G Delhaye, JL Maurice, C Botella, ...
Applied Physics Letters 95 (6), 2009
Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si (001)
G Delhaye, C Merckling, M El-Kazzi, G Saint-Girons, M Gendry, Y Robach, ...
Journal of Applied Physics 100 (12), 2006
Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
G Saint-Girons, I Sagnes
Journal of applied physics 91 (12), 10115-10118, 2002
Enhanced ferroelectricity in epitaxial Hf0. 5Zr0. 5O2 thin films integrated with Si (001) using SrTiO3 templates
J Lyu, I Fina, R Bachelet, G Saint-Girons, S Estandía, J Gázquez, ...
Applied Physics Letters 114 (22), 2019
Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55 μm emission
JC Harmand, G Ungaro, J Ramos, EVK Rao, G Saint-Girons, R Teissier, ...
Journal of crystal growth 227, 553-557, 2001
Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers
G Saint-Girons, P Regreny, L Largeau, G Patriarche, G Hollinger
Applied Physics Letters 91 (24), 2007
Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films
T Song, R Bachelet, G Saint-Girons, R Solanas, I Fina, F Sánchez
ACS Applied Electronic Materials 2 (10), 3221-3232, 2020
Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategy
G Saint-Girons, R Bachelet, R Moalla, B Meunier, L Louahadj, B Canut, ...
Chemistry of Materials 28 (15), 5347-5355, 2016
Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems
G Saint-Girons, J Cheng, P Regreny, L Largeau, G Patriarche, G Hollinger
Physical Review B—Condensed Matter and Materials Physics 80 (15), 155308, 2009
Integration of functional complex oxide nanomaterials on silicon
JM Vila-Fungueiriño, R Bachelet, G Saint-Girons, M Gendry, M Gich, ...
Frontiers in Physics 3, 38, 2015
Electro-Optical Modulation Based on Pockels Effect in BaTiO3With a Multi-Domain Structure
P Castera, AM Gutierrez, D Tulli, S Cueff, R Orobtchouk, PR Romeo, ...
IEEE Photonics Technology Letters 28 (9), 990-993, 2016
Electric and Mechanical Switching of Ferroelectric and Resistive States in Semiconducting BaTiO3–δ Films on Silicon
A Gómez, JM Vila‐Fungueiriño, R Moalla, G Saint‐Girons, J Gázquez, ...
Small 13 (39), 1701614, 2017
Epitaxy of iridium on SrTiO3/Si (001): A promising scalable substrate for diamond heteroepitaxy
KH Lee, S Saada, JC Arnault, R Moalla, G Saint-Girons, R Bachelet, ...
Diamond and Related Materials 66, 67-76, 2016
Direct growth of GaAs-based structures on exactly (0 0 1)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence …
Y Chriqui, L Largeau, G Patriarche, G Saint-Girons, S Bouchoule, ...
Journal of Crystal Growth 265 (1-2), 53-59, 2004
Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si (001) substrates
C Merckling, G Saint-Girons, C Botella, G Hollinger, M Heyns, J Dekoster, ...
Applied Physics Letters 98 (9), 2011
Spontaneous compliance of the InP∕ SrTiO3 heterointerface
G Saint-Girons, C Priester, P Regreny, G Patriarche, L Largeau, ...
Applied Physics Letters 92 (24), 2008
Pseudomorphic molecular beam epitaxy growth of γ-Al2O3 (001) on Si (001) and evidence for spontaneous lattice reorientation during epitaxy
C Merckling, M El-Kazzi, G Delhaye, M Gendry, G Saint-Girons, ...
Applied physics letters 89 (23), 2006
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