Suivre
Raouf Bennaceur
Raouf Bennaceur
Universite Tunis El Manar
Adresse e-mail validée de fst.rnu.tn
Titre
Citée par
Citée par
Année
Effect of pH on the properties of ZnS thin films grown by chemical bath deposition
TB Nasr, N Kamoun, M Kanzari, R Bennaceur
Thin solid films 500 (1-2), 4-8, 2006
2112006
Propriétés optiques des couches minces de SnO2 et CuInS2 airless spray
S Belgacem, R Bennaceur
Revue de Physique Appliquée 25 (12), 1245-1258, 1990
1711990
Vapour-etching-based porous silicon: a new approach
M Saadoun, N Mliki, H Kaabi, K Daoudi, B Bessaıs, H Ezzaouia, ...
Thin Solid Films 405 (1-2), 29-34, 2002
1052002
Electronic structure and optical properties of Sb2S3 crystal
TB Nasr, H Maghraoui-Meherzi, HB Abdallah, R Bennaceur
Physica B: Condensed Matter 406 (2), 287-292, 2011
1022011
Structure, surface composition, and electronic properties of and
N Kamoun, S Belgacem, M Amlouk, R Bennaceur, J Bonnet, F Touhari, ...
Journal of Applied Physics 89 (5), 2766-2771, 2001
1012001
Structural analysis of indium sulphide thin films elaborated by chemical bath deposition
B Yahmadi, N Kamoun, R Bennaceur, M Mnari, M Dachraoui, K Abdelkrim
Thin Solid Films 473 (2), 201-207, 2005
782005
Formation of luminescent (NH4) 2SiF6 phase from vapour etching-based porous silicon
M Saadoun, B Bessaıs, N Mliki, M Ferid, H Ezzaouia, R Bennaceur
Applied Surface Science 210 (3-4), 240-248, 2003
772003
Synthesis and characterization of nanocrystallized In2S3 thin films via CBD technique
B Yahmadi, N Kamoun, C Guasch, R Bennaceur
Materials Chemistry and Physics 127 (1-2), 239-247, 2011
632011
An optical soliton pair among absorbing three-level atoms
H Eleuch, R Bennaceur
Journal of Optics A: Pure and Applied Optics 5 (5), 528, 2003
592003
Nonlinear dissipation and the quantum noise of light in semiconductor microcavities
H Eleuch, R Bennaceur
Journal of Optics B: Quantum and Semiclassical Optics 6 (4), 189, 2004
582004
Formation of porous silicon for large-area silicon solar cells: A new method
M Saadoun, H Ezzaouia, B Bessaıs, MF Boujmil, R Bennaceur
Solar energy materials and solar cells 59 (4), 377-385, 1999
551999
Quantum model of emission in a weakly non ideal plasma
H Eleuch, N Ben Nessib, R Bennaceur
The European Physical Journal D-Atomic, Molecular, Optical and Plasma …, 2004
522004
Gettering impurities from crystalline silicon by phosphorus diffusion using a porous silicon layer
N Khedher, M Hajji, M Hassen, AB Jaballah, B Ouertani, H Ezzaouia, ...
Solar energy materials and solar cells 87 (1-4), 605-611, 2005
452005
Improvement of transport parameters in solar grade monocrystalline silicon by application of a sacrificial porous silicon layer
N Khedher, M Hajji, M Bouaıcha, MF Boujmil, H Ezzaouia, B Bessaıs, ...
Solid state communications 123 (1-2), 7-10, 2002
452002
Normal-state properties of BEDT-TTF compounds and the superconductivity pairing mechanism
R Louati, S Charfi-Kaddour, AB Ali, R Bennaceur, M Héritier
Physical Review B 62 (9), 5957, 2000
412000
Correlation effects in ET compounds
R Louati, S Charfi-Kaddour, AB Ali, R Bennaceur, M Heritier
Synthetic metals 103 (1-3), 1857-1860, 1999
341999
Technological, structural and morphological aspects of screen-printed ITO used in ITO/Si type structure
B Bessais, N Mliki, R Bennaceur
Semiconductor science and technology 8 (1), 116, 1993
341993
First principles calculations of electronic and optical properties of Ag2S
TB Nasr, H Maghraoui-Meherzi, HB Abdallah, R Bennaceur
Solid state sciences 26, 65-71, 2013
332013
Caractérisations structurale et morphologique des couches minces de CuInS2 et d'In-S" airless spray"
N Kamoun, S Belgacem, M Amlouk, R Bennaceur, K Abdelmoula, ...
Journal de Physique III 4 (3), 473-491, 1994
33*1994
Self-consistent random phase approximation: Application to the Hubbard model for finite number of sites
M Jemaï, P Schuck, J Dukelsky, R Bennaceur
Physical Review B 71 (8), 085115, 2005
322005
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20