| Demonstration of L-shaped tunnel field-effect transistors SW Kim, JH Kim, TJK Liu, WY Choi, BG Park IEEE transactions on electron devices 63 (4), 1774-1778, 2015 | 291 | 2015 |
| Design guideline of Si-based L-shaped tunneling field-effect transistors SW Kim, WY Choi, MC Sun, HW Kim, BG Park Japanese Journal of Applied Physics 51 (6S), 06FE09, 2012 | 144 | 2012 |
| Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ... IEEE Electron Device Letters 38 (10), 1379-1382, 2017 | 91 | 2017 |
| Double-gate TFET with vertical channel sandwiched by lightly doped Si JH Kim, S Kim, BG Park IEEE Transactions on Electron Devices 66 (4), 1656-1661, 2019 | 84 | 2019 |
| Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET Y Choi, K Lee, KY Kim, S Kim, J Lee, R Lee, HM Kim, YS Song, S Kim, ... Solid-State Electronics 164, 107686, 2020 | 49 | 2020 |
| Environment-adaptable photonic–electronic-coupled neuromorphic angular visual system M Kumar, J Lim, S Kim, H Seo ACS nano 14 (10), 14108-14117, 2020 | 41 | 2020 |
| An artificial piezotronic synapse for tactile perception M Kumar, R Singh, H Kang, S Kim, H Seo Nano Energy 73, 104756, 2020 | 40 | 2020 |
| Tunneling field-effect transistor with Si/SiGe material for high current drivability HW Kim, JH Kim, SW Kim, MC Sun, E Park, BG Park Japanese Journal of Applied Physics 53 (6S), 06JE12, 2014 | 39 | 2014 |
| Investigation of electrical characteristic behavior induced by channel-release process in stacked nanosheet gate-all-around MOSFETs S Kim, M Kim, D Ryu, K Lee, S Kim, J Lee, R Lee, S Kim, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (6), 2648-2652, 2020 | 38 | 2020 |
| Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs YS Song, JH Kim, G Kim, HM Kim, S Kim, BG Park IEEE Journal of the Electron Devices Society 9, 36-41, 2020 | 36 | 2020 |
| Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation K Chatterjee, S Kim, G Karbasian, D Kwon, AJ Tan, AK Yadav, CR Serrao, ... IEEE Electron Device Letters 40 (9), 1423-1426, 2019 | 33 | 2019 |
| Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method SW Kim, WY Choi, MC Sun, BG Park Journal of nanoscience and nanotechnology 13 (9), 6376-6381, 2013 | 32 | 2013 |
| Light effect on negative bias-induced instability of HfInZnO amorphous oxide thin-film transistor DW Kwon, JH Kim, JS Chang, SW Kim, W Kim, JC Park, CJ Kim, BG Park IEEE Transactions on electron devices 58 (4), 1127-1133, 2011 | 32 | 2011 |
| A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology AJ Tan, AK Yadav, K Chatterjee, D Kwon, S Kim, C Hu, S Salahuddin IEEE Electron Device Letters 39 (1), 95-98, 2018 | 31 | 2018 |
| Hump effects of germanium / silicon heterojunction tunnel field-effect transistors SW Kim, WY Choi IEEE Transactions on Electron Devices 63 (6), 2583-2588, 2016 | 29 | 2016 |
| Vertical type double gate tunnelling FETs with thin tunnel barrier JH Kim, SW Kim, HW Kim, BG Park Electronics Letters 51 (9), 718-720, 2015 | 29 | 2015 |
| Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure D Ryu, M Kim, J Yu, S Kim, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (4), 1859-1863, 2020 | 28 | 2020 |
| Effects of localized body doping on switching characteristics of tunnel field-effect transistor (TFET) inverters with vertical structures DW Kwon, HW Kim, Jang Hyun Kim, E Park, J Lee, W Kim, S Kim, JH Lee, ... IEEE Transactions on Electron Devices 64 (4), 1799-1805, 2017 | 28* | 2017 |
| Patterning of Si nanowire array with electron beam lithography for sub-22 nm Si nanoelectronics technology MC Sun, G Kim, JH Lee, H Kim, SW Kim, HW Kim, JH Lee, H Shin, ... Microelectronic engineering 110, 141-146, 2013 | 25 | 2013 |
| High on-current Ge-channel heterojunction tunnel field-effect transistor using direct band-to-band tunneling G Kim, J Lee, JH Kim, S Kim Micromachines 10 (2), 77, 2019 | 24 | 2019 |
Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityAdresse e-mail validée de snu.ac.kr
