| Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou Nature Nanotechnology 15 (7), 545-557, 2020 | 625 | 2020 |
| Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ... Advanced materials 31 (7), 1805284, 2019 | 258 | 2019 |
| Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou Advanced Functional Materials 28 (40), 1803728, 2018 | 243 | 2018 |
| Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing S Wang, L Liu, L Gan, H Chen, X Hou, Y Ding, S Ma, DW Zhang, P Zhou Nature communications 12 (1), 53, 2021 | 191 | 2021 |
| Small footprint transistor architecture for photoswitching logic and in situ memory C Liu, H Chen, X Hou, H Zhang, J Han, YG Jiang, X Zeng, DW Zhang, ... Nature nanotechnology 14 (7), 662-667, 2019 | 179 | 2019 |
| Logic gates based on neuristors made from two-dimensional materials H Chen, X Xue, C Liu, J Fang, Z Wang, J Wang, DW Zhang, W Hu, P Zhou Nature Electronics 4 (6), 399-404, 2021 | 107 | 2021 |
| Suspended SnS2 Layers by Light Assistance for Ultrasensitive Ammonia Detection at Room Temperature H Chen, Y Chen, H Zhang, DW Zhang, P Zhou, J Huang Advanced Functional Materials 28 (20), 1801035, 2018 | 104 | 2018 |
| A noble metal dichalcogenide for high‐performance field‐effect transistors and broadband photodetectors Z Wang, P Wang, F Wang, J Ye, T He, F Wu, M Peng, P Wu, Y Chen, ... Advanced Functional Materials 30 (5), 1907945, 2020 | 93 | 2020 |
| Time‐tailoring van der Waals heterostructures for human memory system programming H Chen, C Liu, Z Wu, Y He, Z Wang, H Zhang, Q Wan, W Hu, DW Zhang, ... Advanced Science 6 (20), 1901072, 2019 | 82 | 2019 |
| Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing L Liu, Y Li, X Huang, J Chen, Z Yang, KH Xue, M Xu, H Chen, P Zhou, ... Advanced Science 8 (15), 2005038, 2021 | 56 | 2021 |
| Ambipolar 2D semiconductors and emerging device applications W Hu, Z Sheng, X Hou, H Chen, Z Zhang, DW Zhang, P Zhou Small Methods 5 (1), 2000837, 2021 | 49 | 2021 |
| Electronic and Optoelectronic Applications Based on ReS2 Y Xiong, HW Chen, DW Zhang, P Zhou physica status solidi (RRL)–Rapid Research Letters 13 (6), 1800658, 2019 | 47 | 2019 |
| 2D atomic crystals: a promising solution for next‐generation data storage X Hou, H Chen, Z Zhang, S Wang, P Zhou Advanced Electronic Materials 5 (9), 1800944, 2019 | 32 | 2019 |
| Dramatic switching behavior in suspended MoS2 field-effect transistors H Chen, J Li, X Chen, D Zhang, P Zhou Semiconductor Science and Technology 33 (2), 024001, 2018 | 17 | 2018 |
| Analysis of the relationship between the contact barrier and rectification ratio in a two-dimensional P–N heterojunction X Chen, H Chen, Z Wang, Y Shan, DW Zhang, S Wu, W Hu, P Zhou Semiconductor Science and Technology 33 (11), 114012, 2018 | 9 | 2018 |
| Highly area-efficient low-power SRAM cell with 2 transistors and 2 resistors J Li, J Li, Y Ding, C Liu, X Hou, H Chen, Y Xiong, DW Zhang, Y Chai, ... 2019 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2019 | 6 | 2019 |
| Temperature-Dependent Logic Behavior of Logic Transistors Based on WS2 Y Xiong, X Chen, Z Zhang, H Chen, J Li, C Liu, P Zhou Ieee Access 8, 79368-79375, 2020 | 5 | 2020 |
| Temperature-switching logic in MoS2 single transistors X Chen, L Gu, L Liu, H Chen, J Li, C Liu, P Zhou Chinese Physics B 29 (9), 097201, 2020 | 3 | 2020 |
Zhou PengFudan UniversityAdresse e-mail validée de fudan.edu.cn
