Suman Datta

Citée par

	Toutes	Depuis 2018
Citations	31945	14046
indice h	92	58
indice i10	446	288

3500

1750

875

2625

20042005200620072008200920102011201220132014201520162017201820192020202120222023119 218 329 463 699 796 1009 1192 1384 1975 2265 2307 2477 2362 2408 2289 2500 3058 3441 342

Accès public

Tout afficher

81 articles

52 articles

disponibles

non disponibles

Sur la base des exigences liées au financement

Coauteurs

Vijaykrishnan NarayananRobert Noll Chair Professor at The Pennsylvania State UniversityAdresse e-mail validée de cse.psu.edu
Kai NiRochester Institute of TechnologyAdresse e-mail validée de rit.edu
Sumeet GuptaSchool of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Nikhil ShuklaUniversity of VirginiaAdresse e-mail validée de virginia.edu
Marko RadosavljevicIntel CorporationAdresse e-mail validée de intel.com
Matthew JerryUniversity of Notre Dame / Pennsylvania State UniversityAdresse e-mail validée de nd.edu
Xueqing LiAssociate Professor, Tsinghua UniversityAdresse e-mail validée de tsinghua.edu.cn
Dheeraj MohataSenior Integration Engineer, GCS IncAdresse e-mail validée de gcsincorp.com
Ahmedullah AzizAssistant Professor, University of Tennessee, KnoxvilleAdresse e-mail validée de utk.edu
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPAdresse e-mail validée de vt.edu
Darrell G. SchlomCornell UniversityAdresse e-mail validée de cornell.edu
Huichu LiuIntel Labs, Intel CorporationAdresse e-mail validée de intel.com
Benjamin GrisafeUniversity of Notre DameAdresse e-mail validée de nd.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityAdresse e-mail validée de psu.edu
Himanshu MadanIntel, PennState UniversityAdresse e-mail validée de intel.com
vinay saripalliPhD in computer Science and Engineering, Penn State UniversityAdresse e-mail validée de psu.edu
Ashish AgrawalDevcie Engineer at Components Research, Intel CorporationAdresse e-mail validée de intel.com
Ram Krishna GhoshAssistant Professor, ECE, IIIT-DelhiAdresse e-mail validée de iiitd.ac.in
Roman Engel-HerbertAssoc. Professor of Materials Science and Engineering, Chemistry and Physics, The Pennsylvania StateAdresse e-mail validée de psu.edu
Abhinav PariharColumbia UniversityAdresse e-mail validée de columbia.edu

Suivre

Suman Datta

Joseph M. Pettit Chair Professor

Adresse e-mail validée de gatech.edu - Page d'accueil

Georgia Tech


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Benchmarking nanotechnology for high-performance and low-power logic transistor applications R Chau, S Datta, M Doczy, B Doyle, B Jin, J Kavalieros, A Majumdar, ... IEEE transactions on nanotechnology 4 (2), 153-158, 2005	849	2005
High-/spl kappa//metal-gate stack and its MOSFET characteristics R Chau, S Datta, M Doczy, B Doyle, J Kavalieros, M Metz IEEE Electron Device Letters 25 (6), 408-410, 2004	701*	2004
High performance fully-depleted tri-gate CMOS transistors BS Doyle, S Datta, M Doczy, S Hareland, B Jin, J Kavalieros, T Linton, ... IEEE Electron Device Letters 24 (4), 263-265, 2003	652	2003
Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016	566	2016
Tri-gate devices and methods of fabrication RS Chau, BS Doyle, J Kavalieros, D Barlage, S Datta, SA Hareland US Patent 6,858,478, 2005	490	2005
Tri-gate devices and methods of fabrication RS Chau, BS Doyle, J Kavalieros, D Barlage, S Datta US Patent 7,358,121, 2008	475	2008
Integrated nanoelectronics for the future R Chau, B Doyle, S Datta, J Kavalieros, K Zhang Nature materials 6 (11), 810-812, 2007	447	2007
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature communications 6 (1), 7311, 2015	408	2015
Ferroelectric FET analog synapse for acceleration of deep neural network training M Jerry, PY Chen, J Zhang, P Sharma, K Ni, S Yu, S Datta 2017 IEEE International Electron Devices Meeting (IEDM), 6.2. 1-6.2. 4, 2017	372	2017
Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout B Doyle, B Boyanov, S Datta, M Doczy, S Hareland, B Jin, J Kavalieros, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003	358	2003
Atomic layer deposition of high dielectric constant gate dielectrics M Metz, C Boyd, M Kuhn, S Datta, J Kavalieros, M Doczy, J Brask, R Chau US Patent App. 10/943,693, 2006	329	2006
Tri-gate transistor architecture with high-k gate dielectrics, metal gates and strain engineering J Kavalieros, B Doyle, S Datta, G Dewey, M Doczy, B Jin, D Lionberger, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 50-51, 2006	324	2006
The era of hyper-scaling in electronics S Salahuddin, K Ni, S Datta Nature Electronics 1 (8), 442-450, 2018	317	2018
A steep-slope transistor based on abrupt electronic phase transition N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ... Nature communications 6 (1), 7812, 2015	314	2015
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication SA Hareland, RS Chau, BS Doyle, R Rios, T Linton, S Datta US Patent 7,820,513, 2010	300	2010
Method and apparatus for improving stability of a 6T CMOS SRAM cell S Datta, BS Doyle, RS Chau, J Kavalieros, B Zheng, SA Hareland US Patent 6,970,373, 2005	277	2005
CMOS devices with a single work function gate electrode and method of fabrication B Doyle, BY Jin, J Kavalieros, S Datta, J Brask, R Chau US Patent App. 11/238,447, 2007	271	2007
Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication SA Hareland, RS Chau, BS Doyle, R Rios, T Linton, S Datta US Patent 7,456,476, 2008	268	2008
Temperature-Dependent–Characteristics of a VerticalTunnel FET S Mookerjea, D Mohata, T Mayer, V Narayanan, S Datta IEEE Electron Device Letters 31 (6), 564-566, 2010	251	2010
The future of ferroelectric field-effect transistor technology AI Khan, A Keshavarzi, S Datta Nature Electronics 3 (10), 588-597, 2020	243	2020

Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.

Articles 1–20

Nombre de citations par an

Citations en double

Citations fusionnées

Ajouter les coauteursCoauteurs

Suivre

Citée par

Coauteurs