Status and prospects for SiC power MOSFETs JA Cooper, MR Melloch, R Singh, A Agarwal, JW Palmour
IEEE Transactions on Electron Devices 49 (4), 658-664, 2002
568 2002 Advances in silicon carbide processing and applications SE Saddow, AK Agarwal
Artech House, 2004
488 2004 SiC power-switching devices-the second electronics revolution? JA Cooper, A Agarwal
Proceedings of the IEEE 90 (6), 956-968, 2002
435 2002 Characterization, modeling, and application of 10-kV SiC MOSFET J Wang, T Zhao, J Li, AQ Huang, R Callanan, F Husna, A Agarwal
IEEE Transactions on Electron Devices 55 (8), 1798-1806, 2008
421 2008 A new degradation mechanism in high-voltage SiC power MOSFETs A Agarwal, H Fatima, S Haney, SH Ryu
IEEE Electron Device Letters 28 (7), 587-589, 2007
303 2007 Valence‐band discontinuity between GaN and AlN measured by x‐ray photoemission spectroscopy G Martin, S Strite, A Botchkarev, A Agarwal, A Rockett, H Morkoc, ...
Applied physics letters 65 (5), 610-612, 1994
286 1994 Temperature dependence of Fowler-Nordheim current in 6H-and 4H-SiC MOS capacitors AK Agarwal, S Seshadri, LB Rowland
IEEE Electron Device Letters 18 (12), 592-594, 1997
277 1997 GaN grown on hydrogen plasma cleaned 6H‐SiC substrates ME Lin, S Strite, A Agarwal, A Salvador, GL Zhou, N Teraguchi, A Rockett, ...
Applied physics letters 62 (7), 702-704, 1993
244 1993 1800 V NPN bipolar junction transistors in 4H-SiC SH Ryu, AK Agarwal, R Singh, JW Palmour
IEEE Electron Device Letters 22 (3), 124-126, 2001
233 2001 Interface trap profile near the band edges at the NS Saks, SS Mani, AK Agarwal
Applied Physics Letters 76 (16), 2250-2252, 2000
212 2000 10-kV, 123-m/spl Omega//spl middot/cm2 4H-SiC power DMOSFETs SH Ryu, S Krishnaswami, M O'Loughlin, J Richmond, A Agarwal, ...
IEEE Electron Device Letters 25 (8), 556-558, 2004
203 2004 SiC power devices for microgrids Q Zhang, R Callanan, MK Das, SH Ryu, AK Agarwal, JW Palmour
IEEE Transactions on Power Electronics 25 (12), 2889-2896, 2010
202 2010 Comparisons of SiC MOSFET and Si IGBT based motor drive systems T Zhao, J Wang, AQ Huang, A Agarwal
2007 IEEE Industry Applications Annual Meeting, 331-335, 2007
200 2007 1.1 kv 4h-sic power umosfets AK Agarwal, JB Casady, LB Rowland, WF Valek, MH White, CD Brandt
IEEE Electron Device Letters 18 (12), 586-588, 1997
179 1997 Thermal desorption of ultraviolet–ozone oxidized Ge (001) for substrate cleaning XJ Zhang, G Xue, A Agarwal, R Tsu, MA Hasan, JE Greene, A Rockett
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (5 …, 1993
175 1993 Hall mobility and free electron density at the NS Saks, AK Agarwal
Applied Physics Letters 77 (20), 3281-3283, 2000
174 2000 10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation D Grider, M Das, A Agarwal, J Palmour, S Leslie, J Ostop, R Raju, ...
2011 IEEE Electric Ship Technologies Symposium, 131-134, 2011
158 2011 Non-volatile random access memory cell constructed of silicon carbide AK Agarwal, RR Siergiej, CD Brandt, MH White
US Patent 5,510,630, 1996
152 1996 X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN WRL Lambrecht, B Segall, S Strite, G Martin, A Agarwal, H Morkoc, ...
Physical Review B 50 (19), 14155, 1994
148 1994 Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors S Dhar, S Haney, L Cheng, SR Ryu, AK Agarwal, LC Yu, KP Cheung
Journal of Applied Physics 108 (5), 2010
136 2010 