KÚvin Guilloy
KÚvin Guilloy
Department of Physics and Astronomy, Aarhus Universitet
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Cited by
Cited by
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ...
Applied Physics Letters 111 (9), 2017
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ...
Applied Physics Letters 107 (19), 2015
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content
A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy, J Rothman, D Rouchon, ...
Applied Physics Letters 110 (11), 2017
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ...
Progress in Crystal growth and Characterization of Materials 63 (2), 1-24, 2017
Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain
K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ...
ACS photonics 3 (10), 1907-1911, 2016
Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of
AS Ngankeu, SK Mahatha, K Guilloy, M Bianchi, CE Sanders, K Hanff, ...
Physical Review B 96 (19), 195147, 2017
Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress
A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ...
Journal of Applied Physics 121 (5), 2017
Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction
K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, V Calvo
Nano Letters 15 (4), 2429-2433, 2015
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ...
Applied Physics Letters 108 (24), 2016
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content
A Gassenq, L Milord, J Aubin, K Guilloy, S Tardif, N Pauc, J Rothman, ...
Applied Physics Letters 109 (24), 2016
Spin-dependent electron-phonon coupling in the valence band of single-layer
NF Hinsche, AS Ngankeu, K Guilloy, SK Mahatha, AG Čabo, M Bianchi, ...
Physical Review B 96 (12), 121402, 2017
Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers
V Reboud, A Gassenq, K Guilloy, GO Dias, JM Escalante, S Tardif, ...
Silicon Photonics XI 9752, 73-80, 2016
Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering
S Tardif, A Gassenq, K Guilloy, N Pauc, G Osvaldo Dias, JM Hartmann, ...
Journal of Applied Crystallography 49 (5), 1402-1411, 2016
Study of the light emission in Ge layers and strained membranes on Si substrates
A Gassenq, K Guilloy, N Pauc, JM Hartmann, GO Dias, D Rouchon, ...
Thin Solid Films 613, 64-67, 2016
Uniaxially stressed germanium with fundamental direct band gap
R Geiger, T Zabel, E Marin, A Gassenq, JM Hartmann, J Widiez, ...
arXiv preprint arXiv:1603.03454, 2015
Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications
V Reboud, J Widiez, JM Hartmann, GO Dias, D Fowler, A Chelnokov, ...
Silicon Photonics X 9367, 231-236, 2015
Electron–phonon coupling in single-layer MoS2
SK Mahatha, AS Ngankeu, NF Hinsche, I Mertig, K Guilloy, PL Matzen, ...
Surface Science 681, 64-69, 2019
Inductively coupled plasma etching of germanium tin for the fabrication of photonic components
L Milord, J Aubin, A Gassenq, S Tardif, K Guilloy, N Pauc, J Rothman, ...
Silicon Photonics XII 10108, 53-59, 2017
Quantification of dopants in nanomaterial by SEM/EDS
E Robin, N Mollard, K Guilloy, N Pauc, P Gentile, Z Fang, B Daudin, ...
European Microscopy Congress 2016: Proceedings, 380-381, 2016
High aspect ratio germanium nanowires obtained by dry etching
K Guilloy, N Pauc, A Gassenq, V Calvo
MRS Advances 1, 875-880, 2016
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