A comprehensive study of effect of composition on resistive switching of HfxAl1-xOy based RRAM devices by combinatorial sputtering P Kumbhare, P Meihar, S Rajarathinam, S Chouhan, S Pai, N Panwar, ...
MRS Online Proceedings Library (OPL) 1729, 65-70, 2015
3 2015 Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P > 70 C/cm ) in Hf Zr O thin films S Rowtu, P Meihar, A Pandey, MH Ali, S Lashkare, U Ganguly
arXiv preprint arXiv:2212.05026, 2022
2 2022 FeFET-based MirrorBit cell for High-density NVM storage P Meihar, R Srinu, V Saraswat, S Lashkare, H Mulaosmanovic, AK Singh, ...
IEEE Transactions on Electron Devices, 2024
1 2024 Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications P Meihar, R Srinu, S Lashkare, AK Singh, H Mulaosmanovic, ...
IEEE Transactions on Electron Devices, 2024
2024 Design Space for the Scaled Ferroelectric MirrorBit Technology for High-Density NVM Storage P Meihar, S Rowtu, H Mulaosmanovic, S Dünkel, S Beyer, U Ganguly
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024 Enhanced Polarization, Endurance, and Long Retention in Low Temperature Processed W/Hf0.5 Zr0.5 O2 /W Ferroelectric Capacitor for Back-End-of-Line Integration MH Ali, A Pandey, S Shirodkar, R Srinu, P Meihar, U Ganguly, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024 Evolution of Ferroelectricity With Annealing Temperature and Thickness in Sputter Deposited Undoped HfO on Silicon MH Ali, A Pandey, R Srinu, P Meihar, S Patil, S Lashkare, V Deshpande, ...
IEEE Transactions on Electron Devices, 2023
2023 Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2 70 C/cm ) in Hf Zr O Thin Films S Rowtu, P Meihar, A Pandey, MH Ali, S Lashkare, U Ganguly
IEEE Transactions on Electron Devices, 2023
2023 Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO2 on silicon M Hanif Ali, A Pandey, R Srinu, P Meihar, S Patil, S Lashkare, U Ganguly
arXiv e-prints, arXiv: 2304.12924, 2023
2023 Five-Fold Reduction in RESET Energy Consumption by Nitrogen Doping in Phase Change Memory W Uddin, AK Agrawal, P Meihar, A Singh, T Malviya, R Ranjan, ...
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023 A Ferroelectric Differential Bit Cell Based Multiple-Time Programmable Physical Unclonable Function (PUF) For IoT Devices Security P Meihar, S Rowtu, S Lashkare, U Ganguly
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023 Enhanced Remnant Polarization at Low field and Low Processing Temperatures in ALD grown Ferroelectric Hf0.5 Zr0.5O2 MH Ali, R Srinu, P Meihar, A Pandey, M Yadav, S Lashkare, U Ganguly
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2022
2022 Interlayer-engineered high remnant polarization (2P > 70 C/cm ) in Hf Zr O thin films S Rowtu, P Meihar, A Pandey, M Hanif Ali, S Lashkare, U Ganguly
arXiv e-prints, arXiv: 2212.05026, 2022
2022 Chemical Vapor Deposition Method for synthesis of Diamond films D Wadekar, R Varma