Bandgap Engineering of Strained Monolayer and Bilayer MoS2 HJ Conley, B Wang, JI Ziegler, RF Haglund Jr, ST Pantelides, KI Bolotin
Nano letters 13 (8), 3626-3630, 2013
1662 2013 Vertical and in-plane heterostructures from WS 2/MoS 2 monolayers Y Gong, J Lin, X Wang, G Shi, S Lei, Z Lin, X Zou, G Ye, R Vajtai, ...
Nature materials 13 (12), 1135-1142, 2014
1643 2014 First-principles calculation of transport properties of a molecular device M Di Ventra, ST Pantelides, ND Lang
Physical review letters 84 (5), 979, 2000
1114 2000 Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy OL Krivanek, MF Chisholm, V Nicolosi, TJ Pennycook, GJ Corbin, ...
Nature 464 (7288), 571-574, 2010
1112 2010 Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction G Ye, Y Gong, J Lin, B Li, Y He, ST Pantelides, W Zhou, R Vajtai, ...
Nano letters 16 (2), 1097-1103, 2016
747 2016 The electronic structure of impurities and other point defects in semiconductors ST Pantelides
Reviews of Modern Physics 50 (4), 797, 1978
713 1978 Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ...
IEEE Electron Device Letters 22 (4), 176-178, 2001
646 2001 Theory of hydrogen diffusion and reactions in crystalline silicon CG Van de Walle, PJH Denteneer, Y Bar-Yam, ST Pantelides
Physical review B 39 (15), 10791, 1989
535 1989 Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ...
Applied Physics Letters 76 (13), 1713-1715, 2000
521 2000 Control of Doping by Impurity Chemical Potentials: Predictions for Y Yan, SB Zhang, ST Pantelides
Physical Review Letters 86 (25), 5723, 2001
497 2001 Self-consistent method for point defects in semiconductors: Application to the vacancy in silicon J Bernholc, NO Lipari, ST Pantelides
Physical Review Letters 41 (13), 895, 1978
438 * 1978 Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide Y Gong, Z Liu, AR Lupini, G Shi, J Lin, S Najmaei, Z Lin, AL Elías, ...
Nano letters 14 (2), 442-449, 2014
427 2014 Monolayer PtSe2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ...
Nano letters 15 (6), 4013-4018, 2015
396 2015 Microscopic theory of atomic diffusion mechanisms in silicon R Car, PJ Kelly, A Oshiyama, ST Pantelides
Physica B+ C 127 (1-3), 401-407, 1984
396 1984 Electronic structure, spectra, and properties of 4: 2-coordinated materials. I. Crystalline and amorphous SiO 2 and GeO 2 ST Pantelides, WA Harrison
Physical Review B 13 (6), 2667, 1976
371 1976 Defects in amorphous silicon: A new perspective ST Pantelides
Physical review letters 57 (23), 2979, 1986
369 1986 Native defects and self-compensation in ZnSe DB Laks, CG Van de Walle, GF Neumark, PE Blöchl, ST Pantelides
Physical Review B 45 (19), 10965, 1992
354 1992 Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy AR Klots, AKM Newaz, B Wang, D Prasai, H Krzyzanowska, J Lin, ...
Scientific reports 4 (1), 1-7, 2014
352 2014 First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe CG Van de Walle, DB Laks, GF Neumark, ST Pantelides
Physical Review B 47 (15), 9425, 1993
346 1993 First-principles calculations of self-diffusion constants in silicon PE Blöchl, E Smargiassi, R Car, DB Laks, W Andreoni, ST Pantelides
Physical review letters 70 (16), 2435, 1993
312 1993 