Luis Gaggero
Luis Gaggero
Director, Facultad de Ciencias, UAEM
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A simple model for delta‐doped field‐effect transistor electronic states
LM Gaggero‐Sager, R Pérez‐Alvarez
Journal of applied physics 78 (7), 4566-4569, 1995
Thomas-Fermi approximation in p-type δ-doped quantum wells of GaAs and Si
LM Gaggero-Sager, ME Mora-Ramos, DA Contreras-Solorio
Physical Review B 57 (11), 6286, 1998
Design of graphene electronic devices using nanoribbons of different widths
GG Naumis, M Terrones, H Terrones, LM Gaggero-Sager
Applied Physics Letters 95 (18), 182104, 2009
Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells
I Rodriguez-Vargas, LM Gaggero-Sager, VR Velasco
Surface science 537 (1-3), 75-83, 2003
The spectrum of quasiregular heterostructures
R Pérez-Alvarez, F Garcıa-Moliner
Some Contemporary Problems of Condensed Matter Physics, 1-37, 2001
The hydrostatic pressure effects on intersubband optical absorption of n-type δ-doped quantum well in GaAs
O Oubram, O Navarro, LM Gaggero-Sager, JC Martínez-Orozco, ...
Solid state sciences 14 (4), 440-444, 2012
Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems
O Oubram, ME Mora-Ramos, LM Gaggero-Sager
The European Physical Journal B 71 (2), 233, 2009
Subband and transport calculations in double -type -doped quantum wells in Si
I Rodriguez-Vargas, LM Gaggero-Sager
Journal of applied physics 99 (3), 033702, 2006
Thomas-Fermi approximation in a tight-binding calculation of δ-doped quantum wells in GaAs
S Vlaev, LM Gaggero-Sager
Physical Review B 58 (3), 1142, 1998
Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells
LM Gaggero-Sager
Modelling and Simulation in Materials Science and Engineering 9 (1), 1, 2001
Electronic structure of delta-doped quantum well as a function of temperature
LM Gaggero-Sager, R Pérez-Alvarez
Applied physics letters 70 (2), 212-213, 1997
Exchange Energy of a Hole Gas and the Thomas‐Fermi‐Dirac Approximation in p‐Type δ‐Doped Quantum Wells in Si and GaAs
LM Gaggero‐Sager
physica status solidi (b) 231 (1), 243-255, 2002
Electrical properties of Nb-doped PZT 65/35 ceramics: Influence of Nb and excess PbO
JC M’Peko, AG Peixoto, E Jiménez, LM Gaggero-Sager
Journal of electroceramics 15 (2), 167-176, 2005
Study of the electronic properties of GaAs‐based atomic layer doped field effect transistor (ALD‐FET) under the influence of hydrostatic pressure
JC Martínez‐Orozco, I Rodríguez‐Vargas, CA Duque, ME Mora‐Ramos, ...
physica status solidi (b) 246 (3), 581-585, 2009
Exchange and correlation in the Thomas–Fermi approximation
LM Gaggero‐Sager
Journal of mathematical chemistry 25 (2-3), 317-320, 1999
Self-similar conductance patterns in graphene Cantor-like structures
H García-Cervantes, LM Gaggero-Sager, DS Díaz-Guerrero, ...
Scientific reports 7 (1), 1-10, 2017
Transport and electronic properties of two dimensional electron gas in delta-migfet in GaAs
O Oubram, LM Gaggero-Sager, A Bassam, GA Luna Acosta
Progress In Electromagnetics Research 110, 59-80, 2010
Self-consistent calculation of a delta-doped field effect transistor (δ-FET)
LM Gaggero-Sager, ME Mora-Ramos
Materials Science and Engineering: B 47 (3), 279-280, 1997
A simple model for the differential capacitance profile in the atomic layer doped field effect transistor (ALD-FET) in GaAs
JC Martınez-Orozco, LM Gaggero-Sager, SJ Vlaev
Materials Science and Engineering: B 84 (3), 155-158, 2001
Electronic states in B δ‐doped Si quantum well
LM Gaggero‐Sager, R Pérez‐Alvarez
physica status solidi (b) 197 (1), 105-109, 1996
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