Ougazzaden
Ougazzaden
Professor, ECE Georgia Institute of Technology
Adresse e-mail validée de georgiatech-metz.fr
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Optical properties of low band gap layers: Influence of post-growth treatments
EVK Rao, A Ougazzaden, Y Le Bellego, M Juhel
Applied physics letters 72 (12), 1409-1411, 1998
2101998
Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
A Ougazzaden, Y Le Bellego, EVK Rao, M Juhel, L Leprince, G Patriarche
Applied physics letters 70 (21), 2861-2863, 1997
1281997
System and method for determining driver signatures
ID Adams, SJ Fernandes, MJ Natrillo, PB Olson, P Prakash
US Patent 10,134,091, 2018
126*2018
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ...
Applied Physics Letters 91 (7), 071120, 2007
1142007
20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage
F Devaux, F Dorgeuille, A Ougazzaden, F Huet, M Carre, A Carenco, ...
IEEE photonics technology letters 5 (11), 1288-1290, 1993
1141993
20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage
F Devaux, F Dorgeuille, A Ougazzaden, F Huet, M Carre, A Carenco, ...
IEEE photonics technology letters 5 (11), 1288-1290, 1993
1141993
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ...
Applied Physics Letters 91 (7), 071120, 2007
1112007
Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission
A Ramdane, F Devaux, N Souli, D Delprat, A Ougazzaden
IEEE Journal of Selected Topics in Quantum Electronics 2 (2), 326-335, 1996
1011996
40-Gb/s tandem electroabsorption modulator
B Mason, A Ougazzaden, CW Lentz, KG Glogovsky, CL Reynolds, ...
IEEE Photonics Technology Letters 14 (1), 27-29, 2002
952002
Bandgap energy bowing parameter of strained and relaxed InGaN layers
G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ...
Optical Materials Express 4 (5), 1030-1041, 2014
722014
Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires
A Izrael, B Sermage, JY Marzin, A Ougazzaden, R Azoulay, J Etrillard, ...
Applied physics letters 56 (9), 830-832, 1990
691990
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
682018
Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxy
A Ponchet, A Rocher, A Ougazzaden, A Mircea
Journal of applied physics 75 (12), 7881-7883, 1994
681994
Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration
A Ramdane, A Ougazzaden, F Devaux, F Delorme, M Schneider, ...
Electronics letters 30 (23), 1980-1981, 1994
651994
Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
A Mircea, A Ougazzaden, G Primot, C Kazmierski
Journal of crystal growth 124 (1-4), 737-740, 1992
651992
Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW
F Devaux, S Chelles, A Ougazzaden, A Mircea, JC Harmand
Semiconductor science and technology 10 (7), 887, 1995
611995
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
552018
GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3
S Gautier, C Sartel, S Ould-Saad, J Martin, A Sirenko, A Ougazzaden
Journal of Crystal Growth 298, 428-432, 2007
552007
Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four‐wave mixing
A D’Ottavi, E Iannone, A Mecozzi, S Scotti, P Spano, J Landreau, ...
Applied physics letters 64 (19), 2492-2494, 1994
551994
Investigation of carrier heating and spectral hole burning in semiconductor amplifiers by highly nondegenerate four‐wave mixing
A D’Ottavi, E Iannone, A Mecozzi, S Scotti, P Spano, J Landreau, ...
Applied physics letters 64 (19), 2492-2494, 1994
551994
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