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Ougazzaden
Ougazzaden
Georgia Institute of Technology
Adresse e-mail validée de georgiatech-metz.fr
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The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
4052020
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
2812018
System and method for determining driver signatures
ID Adams, SJ Fernandes, MJ Natrillo, PB Olson, P Prakash
US Patent 10,134,091, 2018
2612018
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
2352018
Optical properties of low band gap layers: Influence of post-growth treatments
EVK Rao, A Ougazzaden, Y Le Bellego, M Juhel
Applied physics letters 72 (12), 1409-1411, 1998
2201998
Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
A Ougazzaden, Y Le Bellego, EVK Rao, M Juhel, L Leprince, G Patriarche
Applied physics letters 70 (21), 2861-2863, 1997
1341997
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
1302017
Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy
X Li, S Sundaram, Y El Gmili, T Ayari, R Puybaret, G Patriarche, PL Voss, ...
Crystal Growth & Design 16 (6), 3409-3415, 2016
1302016
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
DJ Rogers, F Hosseini Teherani, A Ougazzaden, S Gautier, L Divay, ...
Applied Physics Letters 91 (7), 2007
1272007
20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage
F Devaux, F Dorgeuille, A Ougazzaden, F Huet, M Carre, A Carenco, ...
IEEE photonics technology letters 5 (11), 1288-1290, 1993
1241993
Bandgap energy bowing parameter of strained and relaxed InGaN layers
G Orsal, Y El Gmili, N Fressengeas, J Streque, R Djerboub, T Moudakir, ...
Optical Materials Express 4 (5), 1030-1041, 2014
1222014
Vertical full-colour micro-LEDs via 2D materials-based layer transfer
J Shin, H Kim, S Sundaram, J Jeong, BI Park, CS Chang, J Choi, T Kim, ...
Nature 614 (7946), 81-87, 2023
1142023
Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission
A Ramdane, F Devaux, N Souli, D Delprat, A Ougazzaden
IEEE Journal of Selected Topics in Quantum Electronics 2 (2), 326-335, 1996
1071996
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
1042017
40-Gb/s tandem electroabsorption modulator
B Mason, A Ougazzaden, CW Lentz, KG Glogovsky, CL Reynolds, ...
IEEE Photonics Technology Letters 14 (1), 27-29, 2002
1012002
Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
T Ayari, S Sundaram, X Li, Y El Gmili, PL Voss, JP Salvestrini, ...
Applied Physics Letters 108 (17), 2016
872016
Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems
Y Halfaya, C Bishop, A Soltani, S Sundaram, V Aubry, PL Voss, ...
Sensors 16 (3), 273, 2016
852016
Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires
A Izrael, B Sermage, JY Marzin, A Ougazzaden, R Azoulay, J Etrillard, ...
Applied physics letters 56 (9), 830-832, 1990
791990
Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates
RY Tay, SH Tsang, M Loeblein, WL Chow, GC Loh, JW Toh, SL Ang, ...
Applied Physics Letters 106 (10), 2015
762015
Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
A Mircea, A Ougazzaden, G Primot, C Kazmierski
Journal of crystal growth 124 (1-4), 737-740, 1992
721992
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