Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film S Huang, Q Jiang, S Yang, C Zhou, KJ Chen
IEEE Electron Device Letters 33 (4), 516-518, 2012
283 2012 600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
278 2013 Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors S Huang, S Yang, J Roberts, KJ Chen
Japanese journal of applied physics 50 (11R), 110202, 2011
230 2011 Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si devices C Zhou, Q Jiang, S Huang, KJ Chen
IEEE Electron Device Letters 33 (8), 1132-1134, 2012
218 2012 High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497-1499, 2013
185 2013 Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges S Huang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE electron device letters 34 (2), 193-195, 2013
136 2013 Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition L Lu, ZY Gao, B Shen, FJ Xu, S Huang, ZL Miao, Y Hao, ZJ Yang, ...
Journal of Applied Physics 104 (12), 2008
130 2008 High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy X Wang, S Liu, N Ma, L Feng, G Chen, F Xu, N Tang, S Huang, KJ Chen, ...
Applied Physics Express 5 (1), 015502, 2012
115 2012 High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation Z Tang, S Huang, Q Jiang, S Liu, C Liu, KJ Chen
IEEE electron device letters 34 (3), 366-368, 2013
112 2013 Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices S Huang, X Liu, X Wang, X Kang, J Zhang, J Fan, J Shi, K Wei, Y Zheng, ...
IEEE Transactions on Electron Devices 65 (1), 207-214, 2017
99 2017 Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess Y Shi, S Huang, Q Bao, X Wang, K Wei, H Jiang, J Li, C Zhao, S Li, ...
IEEE Transactions on Electron Devices 63 (2), 614-619, 2016
95 2016 Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology KJ Chen, L Yuan, MJ Wang, H Chen, S Huang, Q Zhou, C Zhou, BK Li, ...
2011 International Electron Devices Meeting, 19.4. 1-19.4. 4, 2011
93 2011 Mapping of interface traps in high-performance Al2 O3 /AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013
90 2013 High-Performance Enhancement-Mode Al2 O3 /AlGaN/GaN-on-Si MISFETs With 626 MW/ Figure of Merit Q Zhou, B Chen, Y Jin, S Huang, K Wei, X Liu, X Bao, J Mou, B Zhang
IEEE Transactions on Electron Devices 62 (3), 776-781, 2015
84 2015 High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure S Huang, X Liu, X Wang, X Kang, J Zhang, Q Bao, K Wei, Y Zheng, ...
IEEE Electron Device Letters 37 (12), 1617-1620, 2016
80 2016 Robust SiNx /AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer X Wang, S Huang, Y Zheng, K Wei, X Chen, G Liu, T Yuan, W Luo, L Pang, ...
IEEE Electron Device Letters 36 (7), 666-668, 2015
77 2015 Effect of GaN channel layer thickness on DC and RF performance of GaN HEMTs with composite AlGaN/GaN buffer X Wang, S Huang, Y Zheng, K Wei, X Chen, H Zhang, X Liu
IEEE Transactions on electron devices 61 (5), 1341-1346, 2014
74 2014 A 5.8-GHz high-power and high-efficiency rectifier circuit with lateral GaN Schottky diode for wireless power transfer K Dang, J Zhang, H Zhou, S Huang, T Zhang, Z Bian, Y Zhang, X Wang, ...
IEEE Transactions on Power Electronics 35 (3), 2247-2252, 2019
69 2019 O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ...
Applied Physics Letters 106 (3), 2015
69 2015 Current transport mechanism of Au∕ Ni∕ GaN Schottky diodes at high temperatures S Huang, B Shen, MJ Wang, FJ Xu, Y Wang, HY Yang, F Lin, L Lu, ...
Applied Physics Letters 91 (7), 2007
64 2007