Justin W. Wells

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Philip Hofmannprofessor of physics, Aarhus UniversityAdresse e-mail validée de phys.au.dk
Federico MazzolaUniversity of Venice Ca' Foscari / iom-CNRAdresse e-mail validée de iom.cnr.it
S. P. CooilPostdoctoral Researcher - University of Oslo, Centre of Materials Science and Nanotechnology.Adresse e-mail validée de fys.uio.no
Jill MiwaAssociate Professor, Aarhus UniversityAdresse e-mail validée de phys.au.dk
Fei SongProfessor, Shanghai Synchrotron Radiation Facility, CASAdresse e-mail validée de sinap.ac.cn
Andrew EvansProfessor of Physics, Aberystwyth UniversityAdresse e-mail validée de aber.ac.uk
Phil D C KingSchool of Physics and Astronomy, University of St AndrewsAdresse e-mail validée de st-andrews.ac.uk
Erik WahlströmNorwegian University of Science and TechnologyAdresse e-mail validée de ntnu.no
Lewis BawdenUniversity of AmsterdamAdresse e-mail validée de uva.nl
Craig PolleyBeamline Scientist, MAX IV LaboratoryAdresse e-mail validée de maxiv.lu.se
Nacho PascualCIC nanoGUNEAdresse e-mail validée de nanogune.eu
Håkon Ivarssønn RøstPostdoctoral Researcher, University of BergenAdresse e-mail validée de uib.no
Marco BianchiAarhus University, Dep. Physics and Astronomy,Adresse e-mail validée de phys.au.dk
Jesper KallehaugeDanish Center for Particle Therapy and Institute of Clinical Medicine Aarhus UniversityAdresse e-mail validée de rm.dk
Greg CabailhSorbonne UniversitéAdresse e-mail validée de insp.jussieu.fr
J. Esteban GayoneCONICET. Centro Atómico Bariloche and Instituto Balseiro. CNEA. ArgentinaAdresse e-mail validée de cab.cnea.gov.ar
Bjarke JørgensenForsker ved NewtecAdresse e-mail validée de newtec.dk
Richard BalogAssistant Professor, Aarhus University, DenmarkAdresse e-mail validée de phys.au.dk
Dag Werner BreibyNorwegian University of Science and Technology (NTNU); University of South-Eastern Norway (USN)Adresse e-mail validée de ntnu.no
Jorge Lobo ChecaTenured researcher, Spanish Research Council (CSIC)Adresse e-mail validée de csic.es

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Justin W. Wells

Professor, University of Oslo

Adresse e-mail validée de fys.uio.no - Page d'accueil

Physics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Direct observation of spin-polarized bulk bands in an inversion-symmetric semiconductor JM Riley, F Mazzola, M Dendzik, M Michiardi, T Takayama, L Bawden, ... Nature Physics 10 (11), 835-839, 2014	339	2014
Atomic hydrogen adsorbate structures on graphene R Balog, B Jørgensen, J Wells, E Lægsgaard, P Hofmann, F Besenbacher, ... Journal of the American Chemical Society 131 (25), 8744-8745, 2009	339	2009
Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides MS Bahramy, OJ Clark, BJ Yang, J Feng, L Bawden, JM Riley, I Marković, ... Nature materials 17 (1), 21-28, 2018	186	2018
Spin–valley locking in the normal state of a transition-metal dichalcogenide superconductor L Bawden, SP Cooil, F Mazzola, JM Riley, LJ Collins-McIntyre, V Sunko, ... Nature communications 7 (1), 11711, 2016	125	2016
Structure of the (111) surface of bismuth: LEED analysis and first-principles calculations H Mönig, J Sun, YM Koroteev, G Bihlmayer, J Wells, EV Chulkov, K Pohl, ... Physical Review B—Condensed Matter and Materials Physics 72 (8), 085410, 2005	125	2005
Nondegenerate metallic states on Bi (114): a one-dimensional topological metal JW Wells, JH Dil, F Meier, J Lobo-Checa, VN Petrov, J Osterwalder, ... Physical Review Letters 102 (9), 096802, 2009	99	2009
Surface-sensitive conductance measurements P Hofmann, JW Wells Journal of Physics: Condensed Matter 21 (1), 013003, 2008	93	2008
Robust Surface Doping of Bi2Se3 by Rb Intercalation M Bianchi, RC Hatch, Z Li, P Hofmann, F Song, JL Mi, BB Iversen, ... ACS Nano, 2012	89	2012
Disentangling Surface, Bulk, and Space-Charge-Layer Conductivity in JW Wells, JF Kallehauge, TM Hansen, P Hofmann Physical review letters 97 (20), 206803, 2006	64	2006
Exploring the limits of N-type ultra-shallow junction formation CM Polley, WR Clarke, JA Miwa, G Scappucci, JW Wells, DL Jaeger, ... ACS nano 7 (6), 5499-5505, 2013	57	2013
Iron-mediated growth of epitaxial graphene on SiC and diamond SP Cooil, F Song, GT Williams, OR Roberts, DP Langstaff, B Jørgensen, ... Carbon 50 (14), 5099-5105, 2012	56	2012
Hierarchical spin-orbital polarization of a giant Rashba system L Bawden, JM Riley, CH Kim, R Sankar, EJ Monkman, DE Shai, HI Wei, ... Science advances 1 (8), e1500495, 2015	54	2015
Evidence against a charge density wave on Bi (111) TK Kim, J Wells, C Kirkegaard, Z Li, SV Hoffmann, JE Gayone, ... Physical Review B—Condensed Matter and Materials Physics 72 (8), 085440, 2005	53	2005
Thickness dependence of dynamic and static magnetic properties of pulsed laser deposited La< sub> 0.7</sub> Sr< sub> 0.3</sub> MnO< sub> 3</sub> films on SrTiO< sub> 3</sub>(001) Å Monsen, JE Boschker, F Macià, JW Wells, P Nordblad, A Kent, ... Journal of Magnetism and Magnetic Materials, 2014	52*	2014
Kinks in the Band of Graphene Induced by Electron-Phonon Coupling F Mazzola, JW Wells, R Yakimova, S Ulstrup, JA Miwa, R Balog, ... Physical review letters 111 (21), 216806, 2013	51	2013
On-surface manipulation of atom substitution between cobalt phthalocyanine and the Cu (111) substrate K Shen, B Narsu, G Ji, H Sun, J Hu, Z Liang, X Gao, H Li, Z Li, B Song, ... RSC advances 7 (23), 13827-13835, 2017	50	2017
Tunable high aspect ratio polymer nanostructures for cell interfaces KS Beckwith, SP Cooil, JW Wells, P Sikorski Nanoscale 7 (18), 8438-8450, 2015	50	2015
Low-temperature growth of bismuth thin films with (111) facet on highly oriented pyrolytic graphite F Song, JW Wells, Z Jiang, M Saxegaard, E Wahlstrom ACS Applied Materials & Interfaces 7 (16), 8525-8532, 2015	46	2015
Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon CM Polley, WR Clarke, JA Miwa, MY Simmons, JW Wells Applied Physics Letters 101 (26), 2012	46	2012
Direct measurement of the band structure of a buried two-dimensional electron gas JA Miwa, P Hofmann, MY Simmons, JW Wells Physical review letters 110 (13), 136801, 2013	45	2013

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