Herve Jaouen
Herve Jaouen
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Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
YM Niquet, D Rideau, C Tavernier, H Jaouen, X Blase
Physical Review B 79 (24), 245201, 2009
Transformer for integrated circuits
M Marty, H Jaouen
US Patent 6,031,445, 2000
Strained Si, Ge, and Si 1− x Ge x alloys modeled with a first-principles-optimized full-zone k∙ p method
D Rideau, M Feraille, L Ciampolini, M Minondo, C Tavernier, H Jaouen, ...
Physical Review B 74 (19), 195208, 2006
A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
E Fuchs, P Dollfus, G Le Carval, S Barraud, D Villanueva, F Salvetti, ...
IEEE transactions on electron devices 52 (10), 2280-2289, 2005
Combined synchrotron X-ray diffraction and wafer curvature measurements during Ni–Si reactive film formation
C Rivero, P Gergaud, M Gailhanou, O Thomas, B Froment, H Jaouen, ...
Applied Physics Letters 87 (4), 041904, 2005
LDMOS modeling for analog and RF circuit design
A Canepari, G Bertrand, A Giry, M Minondo, F Blanchet, H Jaouen, ...
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
On the validity of the effective mass approximation and the Luttinger kp model in fully depleted SOI MOSFETs
D Rideau, M Feraille, M Michaillat, YM Niquet, C Tavernier, H Jaouen
Solid-State Electronics 53 (4), 452-461, 2009
In situ study of stress evolution during the reaction of a nickel film with a silicon substrate
C Rivero, P Gergaud, O Thomas, B Froment, H Jaouen
Microelectronic engineering 76 (1-4), 318-323, 2004
On the accuracy of current TCAD hot carrier injection models in nanoscale devices
A Zaka, Q Rafhay, M Iellina, P Palestri, R Clerc, D Rideau, D Garetto, ...
Solid-state electronics 54 (12), 1669-1674, 2010
Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model
D Garetto, YM Randriamihaja, A Zaka, D Rideau, A Schmid, H Jaouen, ...
Solid-state electronics 71, 74-79, 2012
Random telegraph signal noise SPICE modeling for circuit simulators
C Leyris, S Pilorget, M Marin, M Minondo, H Jaouen
ESSDERC 2007-37th European Solid State Device Research Conference, 187-190, 2007
FEM-based method to determine mechanical stress evolution during process flow in microelectronics. Application to stress-voiding
S Orain, JC Barbe, X Federspiel, P Legallo, H Jaouen
5th International Conference on Thermal and Mechanical Simulation and …, 2004
Semiconductor device having separated exchange means
H Jaouen, M Marty
US Patent 6,081,030, 2000
Electronic transport investigation of arsenic‐implanted silicon. I. Annealing influence on the transport coefficients
C Christofides, H Jaouen, G Ghibaudo
Journal of applied physics 65 (12), 4832-4839, 1989
Electronic transport investigation of arsenic‐implanted silicon. II. Annealing kinetics of defects
C Christofides, G Ghibaudo, H Jaouen
Journal of applied physics 65 (12), 4840-4844, 1989
Lateral operation bipolar transistor and a corresponding fabrication process
O Menut, H Jaouen
US Patent 6,897,545, 2005
Exploring Ni–Si thin-film reactions by means of simultaneous synchrotron X-Ray diffraction and substrate curvature measurements
P Gergaud, C Rivero, M Gailhanou, O Thomas, B Froment, H Jaouen
Materials Science and Engineering: B 114, 67-71, 2004
The STORM technology CAD system
J Lorenz, C Hill, H Jaouen, C Lombardi, C Lyden, K De Meyer, J Pelka, ...
Microelectronics journal 26 (2-3), 113-135, 1995
Electrical and physical investigation of defect annihilation in arsenic implanted silicon
J Said, H Jaouen, G Ghibaudo, I Stoemenos
physica status solidi (a) 117 (1), 99-104, 1990
Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique
C Christofides, G Ghibaudo, H Jaouen
Revue de physique appliquée 22 (6), 407-412, 1987
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