| Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors S Ghose, S Rahman, L Hong, JS Rojas-Ramirez, H Jin, K Park, R Klie, ... Journal of Applied Physics 122 (9), 2017 | 149 | 2017 |
| Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy S Ghose, MS Rahman, JS Rojas-Ramirez, M Caro, R Droopad, A Arias, ... Journal of Vacuum Science & Technology B 34 (2), 2016 | 73 | 2016 |
| Gate-All-Around Strained Si0.4Ge0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application A Agrawal, S Chouksey, W Rachmady, S Vishwanath, S Ghose, M Mehta, ... 2020 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2020 | 38 | 2020 |
| Integration of BiFeO 3/La 0.7 Sr 0.3 MnO 3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors MS Rahman, S Ghose, L Hong, P Dhungana, A Fahami, JR Gatabi, ... Journal of Materials Chemistry C 4 (43), 10386-10394, 2016 | 24 | 2016 |
| Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing A Arias, N Nedev, S Ghose, JS Rojas-Ramirez, D Mateos, ... Advances in Materials Science and Engineering 2018, 2018 | 20 | 2018 |
| Gate-all-around strained Si A Agrawal, S Chouksey, W Rachmady, S Vishwanath, S Ghose, M Mehta IEDM Tech. Dig, 2.2, 2020 | 16 | 2020 |
| Opportunities in 3-D stacked CMOS transistors M Radosavljević, CY Huang, W Rachmady, SH Seung, NK Thomas, ... 2021 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2021 | 9 | 2021 |
| Growth and characterization of wide bandgap semiconductor oxide thin films S Ghose | 7 | 2017 |
| Gate-all-around integrated circuit structures having vertically discrete source or drain structures G Glass, A Murthy, B Guha, MA Sean, T Ghani, S Ghose, S Cea, ... US Patent 11,527,612, 2022 | 6 | 2022 |
| Heteroepitaxial growth and characterization of BiFeO3 thin films on GaAs MS Rahman, S Ghose, JR Gatabi, JS Rojas-Ramirez, RK Pandey, ... Materials Research Express 3 (10), 106408, 2016 | 3 | 2016 |
| Demonstration of a Stacked CMOS Inverter at 60nm Gate Pitch with Power Via and Direct Backside Device Contacts M Radosavljević, CY Huang, R Galatage, MF Qayyum, JA Wiedemer, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures C Bomberger, A Murthy, S Ghose, S Chouksey US Patent 11,532,706, 2022 | 2 | 2022 |
| Gate-all-around integrated circuit structures having strained source or drain structures on insulator A Agrawal, AS Murthy, C Bomberger, JT Kavalieros, K Ganguly, R Keech, ... US Patent App. 16/912,127, 2021 | 2 | 2021 |
| Design and Implementation of a Remote Data Acquisition System Based on SMS S Rahman, S Ghose, ZI Chowdhury, A Al Beruni, EH Chowdhury Advances in Public, Environmental and Occupational Health 3, 39-45, 2014 | 2 | 2014 |
| sharmin D, Hussain I, Yousufzai TK. Design and development of microcontroller based SMS gateway for GSM mobile S Ghose, MS Rahman International Journal of Advanced Engineering Science and Technology (IJAEST …, 2011 | 2 | 2011 |
| Forksheet transistors with dielectric or conductive spine SH Sung, CY Huang, M Radosavljevic, CM Neumann, S Ghose, V Mishra, ... US Patent 11,923,370, 2024 | 1 | 2024 |
| Gate-all-around integrated circuit structures having embedded gesnb source or drain structures C Bomberger, A Murthy, S Ghose, S Chouksey US Patent App. 17/988,612, 2023 | 1 | 2023 |
| Gate-all-around integrated circuit structures having germanium nanowire channel structures C Bomberger, A Murthy, S Ghose, Z Geiger US Patent 11,532,734, 2022 | 1 | 2022 |
| Gate spacer in stacked gate-all-around (gaa) device architecture CY Huang, KL Cheong, P Nath, S Ghose, N Rambert, N Briggs, CC Kuo, ... US Patent App. 17/854,242, 2024 | | 2024 |
| Mobility improvement in gate all around transistors based on substrate orientation SH Sung, A Agrawal, JT Kavalieros, N Rambert, N Briggs, S Ghose, ... US Patent App. 17/847,555, 2023 | | 2023 |
Juan Salvador Rojas RamirezPostdoctoral Research Scientis, Ingram School of Engineering, Texas State UniversityAdresse e-mail validée de txstate.edu
