Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact BT Jonker, G Kioseoglou, AT Hanbicki, CH Li, PE Thompson
Nature Physics 3 (8), 542-546, 2007
502 2007 The role of strain in hydrogenation induced cracking in Si/Si {sub 1-x} Ge {sub x}/Si structures S Lin, D Zengfeng, QX Jia, YQ Wang, M Nastasi, L Yuan, PE Thompson, ...
Applied Physics Letters 93 (4), 2008
419 2008 Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry OMJ Van’t Erve, AT Hanbicki, M Holub, CH Li, C Awo-Affouda, ...
Applied Physics Letters 91 (21), 2007
332 2007 Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
205 1998 Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ...
Journal of Electronic Materials 29, 897-900, 2000
116 2000 Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy PE Thompson, JL Davis, J Waterman, RJ Wagner, D Gammon, DK Gaskill, ...
Journal of applied physics 69 (10), 7166-7172, 1991
86 1991 A diffusional model for the oxidation behavior of alloys SJ Kilpatrick, RJ Jaccodine, PE Thompson
Journal of applied physics 81 (12), 8018-8028, 1997
79 1997 Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ...
Applied Physics Letters 78 (6), 814-816, 2001
76 2001 Electrical spin injection into moderately doped silicon enabled by tailored interfaces R Jansen, BC Min, SP Dash, S Sharma, G Kioseoglou, AT Hanbicki, ...
Physical Review B 82 (24), 241305, 2010
75 2010 Si-based resonant interband tunneling diodes and method of making interband tunneling diodes PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel
US Patent 6,803,598, 2004
75 2004 Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ...
IEEE electron device letters 25 (9), 646-648, 2004
75 2004 Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons
Surface Science 334 (1-3), 29-38, 1995
67 1995 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applicationsN Jin, SY Chung, AT Rice, PR Berger, R Yu, PE Thompson, R Lake
Applied physics letters 83 (16), 3308-3310, 2003
64 2003 Low‐temperature cleaning processes for Si molecular beam epitaxy PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
64 1993 Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ...
Solid-State Electronics 48 (10-11), 1907-1910, 2004
61 2004 Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ...
IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003
60 2003 Information processing with pure spin currents in silicon: Spin injection, extraction, manipulation, and detection OMJ van't Erve, C Awo-Affouda, AT Hanbicki, CH Li, PE Thompson, ...
IEEE transactions on electron devices 56 (10), 2343-2347, 2009
57 2009 Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe/Al2O3 tunnel contacts G Kioseoglou, AT Hanbicki, R Goswami, OMJ van‘t Erve, CH Li, G Spanos, ...
Applied Physics Letters 94 (12), 2009
57 2009 A 230-Watt S-band SiGe heterojunction bipolar transistor PA Potyraj, KJ Petrosky, KD Hobart, FJ Kub, PE Thompson
IEEE Transactions on Microwave Theory and Techniques 44 (12), 2392-2397, 1996
56 1996 Molecular beam epitaxy growth of InSb films on GaAs JL Davis, PE Thompson
Applied physics letters 54 (22), 2235-2237, 1989
55 1989