Marc Bescond
Marc Bescond
IM2NP - CNRS - Aix-Marseille University
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A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ...
IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007
Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study
K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
Flexible photodiodes based on nitride core/shell p–n junction nanowires
H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ...
ACS applied materials & interfaces 8 (39), 26198-26206, 2016
Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented
M Bescond, N Cavassilas, M Lannoo
Nanotechnology 18 (25), 255201, 2007
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Three-dimensional real-space simulation of surface roughness in silicon nanowire FETs
C Buran, MG Pala, M Bescond, M Dubois, M Mouis
IEEE Transactions on Electron Devices 56 (10), 2186-2192, 2009
Heat conduction theory including phonon coherence
Z Zhang, Y Guo, M Bescond, J Chen, M Nomura, S Volz
Physical Review Letters 128 (1), 015901, 2022
3C-silicon carbide nanowire FET: an experimental and theoretical approach
K Rogdakis, SY Lee, M Bescond, SK Lee, E Bano, K Zekentes
IEEE Transactions on Electron Devices 55 (8), 1970-1976, 2008
Modeling of nanoscale solar cells: The Green's function formalism
N Cavassilas, F Michelini, M Bescond
Journal of Renewable and Sustainable Energy 6 (1), 2014
Full-band study of current across silicon nanowire transistors
K Nehari, N Cavassilas, F Michelini, M Bescond, JL Autran, M Lannoo
Applied physics letters 90 (13), 2007
Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism
M Bescond, JL Autran, D Munteanu, M Lannoo
Solid-State Electronics 48 (4), 567-574, 2004
Anharmonic phonon-phonon scattering at the interface between two solids by nonequilibrium Green's function formalism
Y Guo, Z Zhang, M Bescond, S Xiong, M Nomura, S Volz
Physical Review B 103 (17), 174306, 2021
Quantum mechanical modeling of anharmonic phonon-phonon scattering in nanostructures
Y Guo, M Bescond, Z Zhang, M Luisier, M Nomura, S Volz
Physical Review B 102 (19), 195412, 2020
Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
M Bescond, M Lannoo, L Raymond, F Michelini
Journal of Applied Physics 107 (9), 2010
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation
H Mera, M Lannoo, C Li, N Cavassilas, M Bescond
Physical Review B 86 (16), 161404, 2012
Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes
K Rogdakis, M Bescond, E Bano, K Zekentes
Nanotechnology 18 (47), 475715, 2007
Coherent thermal transport in nano-phononic crystals: An overview
Z Zhang, Y Guo, M Bescond, J Chen, M Nomura, S Volz
APL Materials 9 (8), 2021
Anomalous thermal conductivity enhancement in low dimensional resonant nanostructures due to imperfections
H Wang, Y Cheng, Z Fan, Y Guo, Z Zhang, M Bescond, M Nomura, ...
Nanoscale 13 (22), 10010-10015, 2021
Generalized decay law for particlelike and wavelike thermal phonons
Z Zhang, Y Guo, M Bescond, J Chen, M Nomura, S Volz
Physical Review B 103 (18), 184307, 2021
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