Marc Bescond
Marc Bescond
LIMMS, CNRS, Institute of Industrial Science, University of Tokyo
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Cited by
Cited by
A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ...
IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007
Influence of band-structure on electron ballistic transport in Silicon nanowire MOSFET's: an atomistic study
K Nehari, N Cavassilas, JL Autran, M Bescond, D Munteanu, M Lannoo
Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
M Bescond, K Nehari, JL Autran, N Cavassilas, D Munteanu, M Lannoo
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Effective-mass approach for n-type semiconductor nanowire MOSFETs arbitrarily oriented
M Bescond, N Cavassilas, M Lannoo
Nanotechnology 18 (25), 255201, 2007
Flexible photodiodes based on nitride core/shell p–n junction nanowires
H Zhang, X Dai, N Guan, A Messanvi, V Neplokh, V Piazza, M Vallo, ...
ACS applied materials & interfaces 8 (39), 26198-26206, 2016
Three-dimensional real-space simulation of surface roughness in silicon nanowire FETs
C Buran, MG Pala, M Bescond, M Dubois, M Mouis
IEEE transactions on electron devices 56 (10), 2186-2192, 2009
3C-silicon carbide nanowire FET: an experimental and theoretical approach
K Rogdakis, SY Lee, M Bescond, SK Lee, E Bano, K Zekentes
IEEE transactions on electron devices 55 (8), 1970-1976, 2008
Full-band study of current across silicon nanowire transistors
K Nehari, N Cavassilas, F Michelini, M Bescond, JL Autran, M Lannoo
Applied physics letters 90 (13), 132112, 2007
Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green’s function formalism
M Bescond, JL Autran, D Munteanu, M Lannoo
Solid-State Electronics 48 (4), 567-574, 2004
Modeling of nanoscale solar cells: The Green's function formalism
N Cavassilas, F Michelini, M Bescond
Journal of Renewable and Sustainable Energy 6 (1), 011203, 2014
Single donor induced negative differential resistance in silicon n-type nanowire metal-oxide-semiconductor transistors
M Bescond, M Lannoo, L Raymond, F Michelini
Journal of Applied Physics 107 (9), 093703, 2010
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Inelastic scattering in nanoscale devices: One-shot current-conserving lowest-order approximation
H Mera, M Lannoo, C Li, N Cavassilas, M Bescond
Physical Review B 86 (16), 161404, 2012
Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes
K Rogdakis, M Bescond, E Bano, K Zekentes
Nanotechnology 18 (47), 475715, 2007
Modeling of phonon scattering in n-type nanowire transistors using one-shot analytic continuation technique
M Bescond, C Li, H Mera, N Cavassilas, M Lannoo
Journal of Applied Physics 114 (15), 153712, 2013
Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering
N Cavassilas, F Michelini, M Bescond
Journal of Applied Physics 109 (7), 073706, 2011
One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors
N Cavassilas, M Bescond, H Mera, M Lannoo
Applied Physics Letters 102 (1), 013508, 2013
Tight-binding calculations of Ge-nanowire bandstructures
M Bescond, N Cavassilas, K Nehari, M Lannoo
Journal of Computational Electronics 6 (1), 341-344, 2007
Nanoscale device modeling using a conserving analytic continuation technique
H Mera, M Lannoo, N Cavassilas, M Bescond
Physical Review B 88 (7), 075147, 2013
Atomic-scale modeling of source-to-drain tunneling in ultimate Schottky barrier double-gate MOSFETs
M Bescond, JL Autran, D Munteanu, N Cavassilas, M Lannoo
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
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