Won Jong Yoo

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Min Sup ChoiDepartment of Materials Science and Engineering, Chungnam National UniversityAdresse e-mail validée de cnu.ac.kr
Daeyeong LeeSamsumg ElectronicsAdresse e-mail validée de samsung.com
James C. HoneDepartment of Mechanical Engineering, Columbia UniversityAdresse e-mail validée de columbia.edu
Xiaochi Liu 刘晓迟School of Physics and Electronics, Central South UniversityAdresse e-mail validée de csu.edu.cn
Deshun QuPh.D, SAINT, Sungkyunkwan UniversityAdresse e-mail validée de skku.edu
Inyong MoonSungkyunkwan UniversityAdresse e-mail validée de skku.edu
Huamin LiAssistant Professor, University at BuffaloAdresse e-mail validée de buffalo.edu
E. H. HwangSungKyunKwan UniversityAdresse e-mail validée de skku.edu
Changsik KimSKKU Advanced Institute of Nano Technology, Sungkyunkwan UniversityAdresse e-mail validée de skku.edu
Zheng YangKing Abdullah University of Science and TechnologyAdresse e-mail validée de kaust.edu.sa
Ganesh SamudraAssociate Professor, National University of SingaporeAdresse e-mail validée de nus.edu.sg
WanSik HwangKorea Aerospace UniversityAdresse e-mail validée de kau.ac.kr
Changgu LeeSungkyunkwan UniversityAdresse e-mail validée de skku.edu
Yee-Chia YeoNational University of SingaporeAdresse e-mail validée de nus.edu.sg
T.TaniguchiNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
Kenji WatanabeNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
James T. TeheraniGaN Device Development and Process Integration Engineer, Texas InstrumentsAdresse e-mail validée de ti.com
Albert ChinNational Yang Ming Chiao Tung UniversityAdresse e-mail validée de nycu.edu.tw
Ming Huang (黄明）University of Electronic Science and Technology of China; Nanyang Technological University.Adresse e-mail validée de uestc.edu.cn
Ankur NipaneIntel CorporationAdresse e-mail validée de intel.com

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Won Jong Yoo

Professor of Sungkyunkwan University

Adresse e-mail validée de skku.edu - Page d'accueil

2D Materials Nano Devices Plasma Graphene


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Flexible and Transparent MoS₂ Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013	1171	2013
High‐performance perovskite–graphene hybrid photodetector Y Lee, J Kwon, E Hwang, CH Ra, WJ Yoo, JH Ahn, JH Park, JH Cho Advanced materials 27 (1), 41-46, 2015	825	2015
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices M Sup Choi, GH Lee, YJ Yu, DY Lee, S Hwan Lee, P Kim, J Hone, ... Nature communications 4 (1), 1624, 2013	704	2013
Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ... ACS nano 11 (2), 1588-1596, 2017	640	2017
Lateral MoS₂ p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo ACS nano 8 (9), 9332-9340, 2014	538	2014
Highly stretchable piezoelectric‐pyroelectric hybrid nanogenerator JH Lee, KY Lee, MK Gupta, TY Kim, DY Lee, J Oh, C Ryu, WJ Yoo, ... Advanced Materials 26 (5), 765-769, 2014	530	2014
Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo Nature communications 6 (1), 6564, 2015	330	2015
P‐Type Polar Transition of Chemically Doped Multilayer MoS₂ Transistor X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo Advanced Materials 28 (12), 2345-2351, 2016	222	2016
A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS₂–Metal Junction Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ... Advanced Materials 31 (25), 1808231, 2019	186	2019
Transferred via contacts as a platform for ideal two-dimensional transistors Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ... Nature Electronics 2 (5), 187-194, 2019	178	2019
Colossal grain growth yields single-crystal metal foils by contact-free annealing S Jin, M Huang, Y Kwon, L Zhang, BW Li, S Oh, J Dong, D Luo, M Biswal, ... Science 362 (6418), 1021-1025, 2018	176	2018
Carrier‐Type Modulation and Mobility Improvement of Thin MoTe₂ D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo Advanced Materials 29 (39), 1606433, 2017	162	2017
Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ... ACS nano 11 (9), 9143-9150, 2017	158	2017
Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance JH Chen, YQ Wang, WJ Yoo, YC Yeo, G Samudra, DSH Chan, AY Du, ... IEEE transactions on electron devices 51 (11), 1840-1848, 2004	158	2004
Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ... Nature nanotechnology 15 (4), 289-295, 2020	144	2020
Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018	135	2018
Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo Scientific reports 4 (1), 4041, 2014	131	2014
Patterning metal contacts on monolayer MoS₂ with vanishing Schottky barriers using thermal nanolithography X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ... Nature Electronics 2 (1), 17-25, 2019	121	2019
Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode S Zhu, HY Yu, SJ Whang, JH Chen, C Shen, C Zhu, SJ Lee, MF Li, ... IEEE Electron Device Letters 25 (5), 268-270, 2004	116	2004
Carrier transport at the metal–MoS 2 interface F Ahmed, MS Choi, X Liu, WJ Yoo Nanoscale 7 (20), 9222-9228, 2015	110	2015

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