Christophe Gaquiere
Christophe Gaquiere
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Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices?
F Medjdoub, JF Carlin, M Gonschorek, E Feltin, MA Py, D Ducatteau, ...
2006 International Electron Devices Meeting, 1-4, 2006
Current instabilities in GaN-based devices
I Daumiller, D Theron, C Gaquiere, A Vescan, R Dietrich, A Wieszt, ...
IEEE Electron Device Letters 22 (2), 62-64, 2001
Testing the temperature limits of GaN-based HEMT devices
D Maier, M Alomari, N Grandjean, JF Carlin, MA Diforte-Poisson, C Dua, ...
IEEE Transactions on device and materials reliability 10 (4), 427-436, 2010
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
D Ducatteau, A Minko, V Hoel, E Morvan, E Delos, B Grimbert, ...
IEEE Electron Device Letters 27 (1), 7-9, 2005
AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz
N Sarazin, E Morvan, MA di Forte Poisson, M Oualli, C Gaquiere, O Jardel, ...
IEEE Electron Device Letters 31 (1), 11-13, 2009
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
M Zaknoune, B Bonte, C Gaquiere, Y Cordier, Y Druelle, D Theron, ...
IEEE Electron Device Letters 19 (9), 345-347, 1998
Status of the emerging InAlN/GaN power HEMT technology
F Medjdoub, JF Carlin, C Gaquiere, N Grandjean, E Kohn
The Open Electrical & Electronic Engineering Journal 2 (1), 2008
Trap effects studies in GaN MESFETs by pulsed measurements
S Trassaert, B Boudart, C Gaquiere, D Theron, Y Crosnier, F Huet, ...
Electronics Letters 35 (16), 1386-1388, 1999
A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX
P Chevalier, F Pourchon, T Lacave, G Avenier, Y Campidelli, L Depoyan, ...
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2009
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C Ostermaier, G Pozzovivo, JF Carlin, B Basnar, W Schrenk, Y Douvry, ...
IEEE Electron Device Letters 30 (10), 1030-1032, 2009
Characteristics of Al/sub 2/O/sub 3//AllnN/GaN MOSHEMT
F Medjdoub, N Sarazin, M Tordjman, M Magis, MA di Forte-Poisson, ...
Electronics letters 43 (12), 691-692, 2007
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M Alomari, F Medjdoub, JF Carlin, E Feltin, N Grandjean, A Chuvilin, ...
IEEE Electron Device Letters 30 (11), 1131-1133, 2009
Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode
S Saadaoui, M Mongi Ben Salem, M Gassoumi, H Maaref, C Gaquière
Journal of Applied Physics 110 (1), 013701, 2011
AlGaN/GaN HEMT on (111) single crystalline diamond
M Alomari, A Dussaigne, D Martin, N Grandjean, C Gaquière, E Kohn
Electronics letters 46 (4), 299-301, 2010
Investigation of the thermal boundary resistance at the III-nitride/substrate interface using optical methods
J Kuzmík, S Bychikhin, D Pogány, C Gaquière, E Pichonat, E Morvan
Journal of Applied Physics 101 (5), 054508, 2007
High-power GaN MESFET on sapphire substrate
C Gaquiere, S Trassaert, B Boudart, Y Crosnier
IEEE Microwave and guided wave letters 10 (1), 19-20, 2000
Diamond overgrown InAlN/GaN HEMT
M Alomari, M Dipalo, S Rossi, MA Diforte-Poisson, S Delage, JF Carlin, ...
Diamond and Related Materials 20 (4), 604-608, 2011
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 034305, 2013
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Íñiguez-de-la-Torre, I Íñiguez-de-la-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 113705, 2012
12 GHz GaN/AlN/AlGaN Nanowire MISFET
S Vandenbrouck, K Madjour, D Théron, Y Dong, Y Li, CM Lieber, ...
IEEE Electron Device Letters 30 (4), 322-324, 2009
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