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Denis Buttard
Denis Buttard
Professeur Université Grenoble Alpes - CEA-INAC
Adresse e-mail validée de cea.fr
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Epitaxial growth of germanium dots on Si (001) surface covered by a very thin silicon oxide layer
A Barski, M Derivaz, JL Rouviere, D Buttard
Applied Physics Letters 77 (22), 3541-3543, 2000
1002000
X‐ray‐diffraction investigation of the anodic oxidation of porous silicon
D Buttard, D Bellet, G Dolino
Journal of applied physics 79 (10), 8060-8070, 1996
731996
High-energy x-ray reflectivity of buried interfaces created by wafer bonding
F Rieutord, J Eymery, F Fournel, D Buttard, R Oeser, O Plantevin, ...
Physical Review B 63 (12), 125408, 2001
722001
Ultra-dense and highly doped SiNWs for micro-supercapacitors electrodes
F Thissandier, L Dupré, P Gentile, T Brousse, G Bidan, D Buttard, S Sadki
Electrochimica Acta 117, 159-163, 2014
642014
The growth of small diameter silicon nanowires to nanotrees
P Gentile, T David, F Dhalluin, D Buttard, N Pauc, M Den Hertog, P Ferret, ...
Nanotechnology 19 (12), 125608, 2008
592008
Thin layers and multilayers of porous silicon: X-ray diffraction investigation
D Buttard, D Bellet, G Dolino, T Baumbach
Journal of Applied Physics 83 (11), 5814-5822, 1998
591998
Porous silicon strain during in situ ultrahigh vacuum thermal annealing
D Buttard, G Dolino, C Faivre, A Halimaoui, F Comin, V Formoso, L Ortega
Journal of applied physics 85 (10), 7105-7111, 1999
541999
Structural investigation of silicon nanowires using GIXD and GISAXS: Evidence of complex saw-tooth faceting
T David, D Buttard, T Schülli, F Dallhuin, P Gentile
Surface Science 602 (15), 2675-2680, 2008
462008
X-ray reflectivity investigation of thin p-type porous silicon layers
D Buttard, G Dolino, D Bellet, T Baumbach, F Rieutord
Solid state communications 109 (1), 1-5, 1998
381998
X-ray diffraction investigation of porous silicon superlattices
D Buttard, D Bellet, T Baumbach
Thin Solid Films 276 (1-2), 69-72, 1996
381996
Dislocation strain field in ultrathin bonded silicon wafers studied by grazing incidence x-ray diffraction
J Eymery, D Buttard, F Fournel, H Moriceau, GT Baumbach, D Lübbert
Physical Review B 65 (16), 165337, 2002
312002
Gold contamination in VLS-grown Si nanowires: multiwavelength anomalous diffraction investigations
L Dupre, D Buttard, C Leclere, H Renevier, P Gentile
Chemistry of Materials 24 (23), 4511-4516, 2012
282012
Sub-10 nm Silicon Nanopillar Fabrication Using Fast and Brushless Thermal Assembly of PS-b-PDMS Diblock Copolymer
J Garnier, J Arias-Zapata, O Marconot, S Arnaud, S Böhme, C Girardot, ...
ACS applied materials & interfaces 8 (15), 9954-9960, 2016
262016
Highly organised and dense vertical silicon nanowire arrays grown in porous alumina template on< 100> silicon wafers
T Gorisse, L Dupré, P Gentile, M Martin, M Zelsmann, D Buttard
Nanoscale Research Letters 8, 1-9, 2013
262013
Gold colloidal nanoparticle electrodeposition on a silicon surface in a uniform electric field
D Buttard, F Oelher, T David
Nanoscale research letters 6 (1), 580, 2011
232011
X-ray diffraction and reflectivity studies of thin porous silicon layers
D Buttard, G Dolino, D Bellet, T Baumbach
MRS Online Proceedings Library (OPL) 452, 437, 1996
231996
X-ray reflectivity of ultrathin twist-bonded silicon wafers
J Eymery, F Fournel, F Rieutord, D Buttard, H Moriceau, B Aspar
Applied physics letters 75 (22), 3509-3511, 1999
171999
A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
MB Derbali, J Meddeb, H Mâaref, D Buttard, P Abraham, Y Monteil
Journal of applied physics 84 (1), 503-508, 1998
171998
Tailoring strain and morphology of core–shell SiGe nanowires by low-temperature ge condensation
T David, K Liu, A Ronda, L Favre, M Abbarchi, M Gailhanou, P Gentile, ...
Nano letters 17 (12), 7299-7305, 2017
162017
High‐density guided growth of silicon nanowires in nanoporous alumina on Si (100) substrate: estimation of activation energy
D Buttard, T David, P Gentile, F Dhalluin, T Baron
physica status solidi (RRL)–Rapid Research Letters 3 (1), 19-21, 2009
162009
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