Eric Shaner
Eric Shaner
Principal Member of Technical Staff, Sandia National Laboratories
Adresse e-mail validée de sandia.gov
TitreCitée parAnnée
Reduction in the thermal conductivity of single crystalline silicon by phononic crystal patterning
PE Hopkins, CM Reinke, MF Su, RH Olsson III, EA Shaner, ZC Leseman, ...
Nano letters 11 (1), 107-112, 2010
3692010
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, LM Murray, ...
Applied Physics Letters 101 (9), 092109, 2012
1612012
Single-quantum-well grating-gated terahertz plasmon detectors
EA Shaner, M Lee, MC Wanke, AD Grine, JL Reno, SJ Allen
Applied Physics Letters 87 (19), 193507, 2005
1352005
Epsilon-near-zero strong coupling in metamaterial-semiconductor hybrid structures
YC Jun, J Reno, T Ribaudo, E Shaner, JJ Greffet, S Vassant, F Marquier, ...
Nano letters 13 (11), 5391-5396, 2013
1202013
Microwave and terahertz wave sensing with metamaterials
H Tao, EA Kadlec, AC Strikwerda, K Fan, WJ Padilla, RD Averitt, ...
Optics express 19 (22), 21620-21626, 2011
1152011
Infrared plasmons on heavily-doped silicon
JC Ginn, RL Jarecki Jr, EA Shaner, PS Davids
Journal of Applied Physics 110 (4), 043110, 2011
1082011
Phased-array sources based on nonlinear metamaterial nanocavities
O Wolf, S Campione, A Benz, AP Ravikumar, S Liu, TS Luk, EA Kadlec, ...
Nature communications 6, 7667, 2015
972015
Induced transparency by coupling of Tamm and defect states in tunable terahertz plasmonic crystals
GC Dyer, GR Aizin, SJ Allen, AD Grine, D Bethke, JL Reno, EA Shaner
Nature Photonics 7 (11), 925, 2013
722013
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
BV Olson, EA Shaner, JK Kim, JF Klem, SD Hawkins, ME Flatté, ...
Applied Physics Letters 103 (5), 052106, 2013
712013
Midinfrared doping-tunable extraordinary transmission from sub-wavelength gratings
D Wasserman, EA Shaner, JG Cederberg
Applied physics letters 90 (19), 191102, 2007
592007
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
Y Aytac, BV Olson, JK Kim, EA Shaner, SD Hawkins, JF Klem, ME Flatté, ...
Applied Physics Letters 105 (2), 022107, 2014
572014
Electrically tunable extraordinary optical transmission gratings
EA Shaner, JG Cederberg, D Wasserman
Applied Physics Letters 91 (18), 181110, 2007
562007
Active tuning of mid-infrared metamaterials by electrical control of carrier densities
YC Jun, E Gonzales, JL Reno, EA Shaner, A Gabbay, I Brener
Optics express 20 (2), 1903-1911, 2012
532012
Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity
GC Dyer, S Preu, GR Aizin, J Mikalopas, AD Grine, JL Reno, JM Hensley, ...
Applied Physics Letters 100 (8), 083506, 2012
512012
Enhanced responsivity in membrane isolated split-grating-gate plasmonic terahertz detectors
EA Shaner, MC Wanke, AD Grine, SK Lyo, JL Reno, SJ Allen
Applied physics letters 90 (18), 181127, 2007
502007
Terahertz near-field vectorial imaging of subwavelength apertures and aperture arrays
JR Knab, AJL Adam, M Nagel, E Shaner, MA Seo, DS Kim, PCM Planken
Optics express 17 (17), 15072-15086, 2009
482009
Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities
GC Dyer, GR Aizin, S Preu, NQ Vinh, SJ Allen, JL Reno, EA Shaner
Physical review letters 109 (12), 126803, 2012
472012
Novel tunable millimeter-wave grating-gated plasmonic detectors
GC Dyer, GR Aizin, JL Reno, EA Shaner, SJ Allen
IEEE Journal of Selected Topics in Quantum Electronics 17 (1), 85-91, 2010
452010
All-semiconductor negative-index plasmonic absorbers
S Law, C Roberts, T Kilpatrick, L Yu, T Ribaudo, EA Shaner, V Podolskiy, ...
Physical review letters 112 (1), 017401, 2014
442014
Intensity-and Temperature-Dependent Carrier Recombination in InAs/In As 1− x S b x Type-II Superlattices
BV Olson, EA Kadlec, JK Kim, JF Klem, SD Hawkins, EA Shaner, ...
Physical Review Applied 3 (4), 044010, 2015
432015
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