| CNTFET modeling and reconfigurable logic-circuit design I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ... IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007 | 210 | 2007 |
| Scalable electrical compact modeling for graphene FET transistors S Fregonese, M Magallo, C Maneux, H Happy, T Zimmer IEEE Transactions on Nanotechnology 12 (4), 539-546, 2013 | 117 | 2013 |
| Computationally efficient physics-based compact CNTFET model for circuit design S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ... IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008 | 111 | 2008 |
| Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ... Proceedings of the IEEE 105 (6), 1035-1050, 2017 | 101 | 2017 |
| A comprehensive graphene FET model for circuit design S Rodriguez, S Vaziri, A Smith, S Fregonese, M Ostling, MC Lemme, ... IEEE Transactions on Electron Devices 61 (4), 1199-1206, 2014 | 94 | 2014 |
| Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications M Najari, S Fregonese, C Maneux, H Mnif, N Masmoudi, T Zimmer IEEE transactions on electron devices 58 (1), 195-205, 2010 | 73 | 2010 |
| A computationally efficient physics-based compact bipolar transistor model for circuit design-Part I: Model formulation M Schroter, S Lehmann, S Frégonèse, T Zimmer IEEE transactions on electron devices 53 (2), 279-286, 2006 | 50 | 2006 |
| Electrical compact modelling of graphene transistors S Fregonese, N Meng, HN Nguyen, C Majek, C Maneux, H Happy, ... Solid-State Electronics 73, 27-31, 2012 | 47 | 2012 |
| Analysis of CNTFET physical compact model C Maneux, J Goguet, S Fregonese, T Zimmer, HC d'Honincthun, ... International Conference on Design and Test of Integrated Systems in …, 2006 | 45 | 2006 |
| SiGe HBTs and BiCMOS technology for present and future millimeter-wave systems T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ... IEEE Journal of Microwaves 1 (1), 288-298, 2021 | 41 | 2021 |
| A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs AK Sahoo, S Frégonèse, M Weis, N Malbert, T Zimmer IEEE transactions on electron devices 59 (10), 2619-2625, 2012 | 39 | 2012 |
| On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018 | 38 | 2018 |
| A self-aligned vertical HBT for thin SOI SiGeC BiCMOS G Avenier, T Schwartzmann, P Chevalier, B Vandelle, L Rubaldo, ... Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005 | 38 | 2005 |
| Implementation of tunneling phenomena in a CNTFET compact model S Frégonèse, C Maneux, T Zimmer IEEE Transactions on Electron Devices 56 (10), 2224-2231, 2009 | 35 | 2009 |
| Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ... IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018 | 34 | 2018 |
| A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results S Frégonèse, S Lehmann, T Zimmer, M Schroter, D Céli, B Ardouin, ... IEEE transactions on electron devices 53 (2), 287-295, 2006 | 34 | 2006 |
| A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs S Frégonèse, C Maneux, T Zimmer IEEE transactions on electron devices 58 (1), 206-215, 2010 | 33 | 2010 |
| Implementation of electron–phonon scattering in a CNTFET compact model S Frégonèse, J Goguet, C Maneux, T Zimmer IEEE transactions on electron devices 56 (6), 1184-1190, 2009 | 32 | 2009 |
| Electrical behavior and technology optimization of Si/SiGeC HBTs on thin-film SOI G Avenier, S Fregonese, P Chevalier, J Bustos, F Saguin, ... IEEE transactions on electron devices 55 (2), 585-593, 2008 | 32 | 2008 |
| An accurate physics-based compact model for dual-gate bilayer graphene FETs JD Aguirre-Morales, S Fregonese, C Mukherjee, C Maneux, T Zimmer IEEE Transactions on Electron Devices 62 (12), 4333-4339, 2015 | 27 | 2015 |
Thomas ZimmerUniversity of BordeauxAdresse e-mail validée de ims-bordeaux.fr
