sebastien fregonese
sebastien fregonese
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CNTFET modeling and reconfigurable logic-circuit design
I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007
1972007
Computationally efficient physics-based compact CNTFET model for circuit design
S Frégonèse, HC d'Honincthun, J Goguet, C Maneux, T Zimmer, ...
IEEE Transactions on Electron Devices 55 (6), 1317-1327, 2008
1022008
Scalable electrical compact modeling for graphene FET transistors
S Fregonese, M Magallo, C Maneux, H Happy, T Zimmer
IEEE Transactions on Nanotechnology 12 (4), 539-546, 2013
952013
A comprehensive graphene FET model for circuit design
S Rodriguez, S Vaziri, A Smith, S Fregonese, M Ostling, MC Lemme, ...
IEEE Transactions on Electron Devices 61 (4), 1199-1206, 2014
822014
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ...
Proceedings of the IEEE 105 (6), 1035-1050, 2017
732017
Schottky barrier carbon nanotube transistor: Compact modeling, scaling study, and circuit design applications
M Najari, S Frégonèse, C Maneux, H Mnif, N Masmoudi, T Zimmer
IEEE transactions on electron devices 58 (1), 195-205, 2010
662010
A computationally efficient physics-based compact bipolar transistor model for circuit design-Part I: Model formulation
M Schroter, S Lehmann, S Frégonèse, T Zimmer
IEEE transactions on electron devices 53 (2), 279-286, 2006
462006
Analysis of CNTFET physical compact model
C Maneux, J Goguet, S Fregonese, T Zimmer, HC d'Honincthun, ...
International Conference on Design and Test of Integrated Systems in …, 2006
412006
Electrical compact modelling of graphene transistors
S Frégonèse, N Meng, HN Nguyen, C Majek, C Maneux, H Happy, ...
Solid-State Electronics 73, 27-31, 2012
382012
A scalable electrothermal model for transient self-heating effects in trench-isolated SiGe HBTs
AK Sahoo, S Frégonèse, M Weis, N Malbert, T Zimmer
IEEE transactions on electron devices 59 (10), 2619-2625, 2012
352012
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS
G Avenier, T Schwartzmann, P Chevalier, B Vandelle, L Rubaldo, ...
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005
352005
Implementation of tunneling phenomena in a CNTFET compact model
S Frégonèse, C Maneux, T Zimmer
IEEE transactions on electron devices 56 (10), 2224-2231, 2009
332009
A compact model for dual-gate one-dimensional FET: Application to carbon-nanotube FETs
S Frégonèse, C Maneux, T Zimmer
IEEE transactions on electron devices 58 (1), 206-215, 2010
302010
Implementation of electron–phonon scattering in a CNTFET compact model
S Frégonèse, J Goguet, C Maneux, T Zimmer
IEEE transactions on electron devices 56 (6), 1184-1190, 2009
302009
A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results
S Frégonèse, S Lehmann, T Zimmer, M Schroter, D Céli, B Ardouin, ...
IEEE transactions on electron devices 53 (2), 287-295, 2006
302006
Electrical behavior and technology optimization of Si/SiGeC HBTs on thin-film SOI
G Avenier, S Fregonese, P Chevalier, J Bustos, F Saguin, ...
IEEE transactions on electron devices 55 (2), 585-593, 2008
292008
A compact model for SiGe HBT on thin-film SOI
S Fregonese, G Avenier, C Maneux, A Chantre, T Zimmer
IEEE transactions on electron devices 53 (2), 296-303, 2006
262006
On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands
S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer
IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018
252018
Multiscale simulation of carbon nanotube devices
C Adessi, R Avriller, X Blase, A Bournel, HC d'Honincthun, P Dollfus, ...
Comptes Rendus Physique 10 (4), 305-319, 2009
232009
Analytic estimation of thermal resistance in HBTs
A Chakravorty, R D’Esposito, S Balanethiram, S Frégonèse, T Zimmer
IEEE Transactions on Electron Devices 63 (8), 2994-2998, 2016
212016
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