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Robert Stephenson
Robert Stephenson
Atomera, Inc.
Adresse e-mail validée de ieee.org
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Année
Photothermal spectroscopy with femtojoule sensitivity using a micromechanical device
JR Barnes, RJ Stephenson, ME Welland, C Gerber, JK Gimzewski
Nature 372 (6501), 79-81, 1994
4631994
A femtojoule calorimeter using micromechanical sensors
JR Barnes, RJ Stephenson, CN Woodburn, SJ O’shea, ME Welland, ...
Review of Scientific Instruments 65 (12), 3793-3798, 1994
4211994
Reversible nanocontraction and dilatation in a solid induced by polarized light
P Krecmer, AM Moulin, RJ Stephenson, T Rayment, ME Welland, ...
Science 277 (5333), 1799-1802, 1997
2521997
Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
P De Wolf, R Stephenson, T Trenkler, T Clarysse, T Hantschel, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
2332000
Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
P De Wolf, R Stephenson, T Trenkler, T Clarysse, T Hantschel, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
2332000
Method for making an electronic device including a poled superlattice having a net electrical dipole moment
S Halilov, X Huang, I Dukovski, JACSF Yiptong, RJ Mears, M Hytha, ...
US Patent 7,517,702, 2009
992009
Multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 8,389,974, 2013
982013
Method for making a semiconductor device comprising a superlattice dielectric interface layer
RJ Mears, M Hytha, SA Kreps, RJ Stephenson, JACSF Yiptong, ...
US Patent 7,446,002, 2008
982008
Method for making a semiconductor device comprising a superlattice dielectric interface layer
RJ Mears, M Hytha, SA Kreps, RJ Stephenson, JACSF Yiptong, ...
US Patent 7,446,002, 2008
982008
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
M Hytha, RJ Stephenson, SA Kreps
US Patent 7,153,763, 2006
932006
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
M Hytha, RJ Stephenson, SA Kreps
US Patent 7,153,763, 2006
932006
Method for making a semiconductor device including band-engineered superlattice using intermediate annealing
M Hytha, RJ Stephenson, SA Kreps
US Patent 7,153,763, 2006
932006
Multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 7,880,161, 2011
922011
Method for making a multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 7,863,066, 2011
922011
Semiconductor device including a dopant blocking superlattice
R Stephenson, M Hytha
US Patent App. 11/380,987, 2006
922006
Integrated circuit comprising a waveguide having an energy band engineered superlattice
RJ Mears, RJ Stephenson
US Patent 7,279,699, 2007
912007
Method for making an integrated circuit comprising a waveguide having an energy band engineered superlattice
RJ Mears, RJ Stephenson
US Patent 7,109,052, 2006
912006
Method for making a semiconductor device comprising a lattice matching layer
I Dukovski, RJ Stephenson, JACSF Yiptong, S Halilov, RJ Mears, ...
US Patent 7,700,447, 2010
892010
Integrated circuit comprising an active optical device having an energy band engineered superlattice
RJ Mears, RJ Stephenson
US Patent 7,432,524, 2008
892008
Semiconductor device including a superlattice with regions defining a semiconductor junction
RJ Mears, RJ Stephenson
US Patent 7,045,813, 2006
892006
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