Advances in silicon carbide processing and applications SE Saddow, AK Agarwal
Artech House, 2004
403 2004 Electrical performance of CM Tanner, YC Perng, C Frewin, SE Saddow, JP Chang
Applied Physics Letters 91 (20), 203510, 2007
155 2007 Silicon carbide: a versatile material for biosensor applications A Oliveros, A Guiseppi-Elie, SE Saddow
Biomedical microdevices 15 (2), 353-368, 2013
119 2013 4H–SiC photoconductive switching devices for use in high-power applications S Doǧan, A Teke, D Huang, H Morkoç, CB Roberts, J Parish, B Ganguly, ...
Applied physics letters 82 (18), 3107-3109, 2003
98 2003 Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates M Mynbaeva, SE Saddow, G Melnychuk, I Nikitina, M Scheglov, ...
Applied Physics Letters 78 (1), 117-119, 2001
79 2001 Biocompatibility and wettability of crystalline SiC and Si surfaces C Coletti, MJ Jaroszeski, A Pallaoro, AM Hoff, S Iannotta, SE Saddow
2007 29th Annual International Conference of the IEEE Engineering in …, 2007
70 2007 High growth rates (> 30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor RL Myers, Y Shishkin, O Kordina, SE Saddow
Journal of Crystal Growth 285 (4), 486-490, 2005
69 2005 Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
68 2001 Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates CL Frewin, M Jaroszeski, E Weeber, KE Muffly, A Kumar, M Peters, ...
Journal of Molecular Recognition: An Interdisciplinary Journal 22 (5), 380-388, 2009
54 2009 Heteroepitaxy of R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ...
Journal of Applied Physics 105 (8), 084910, 2009
53 2009 Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via
Diamond and related materials 18 (12), 1440-1449, 2009
49 2009 Increased growth rate in a SiC CVD reactor using HCl as a growth additive RL Myers-Ward, O Kordina, Z Shishkin, SP Rao, R Everly, SE Saddow
Materials Science Forum 483, 73-76, 2005
49 2005 Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications SE Saddow, CL Frewin, C Coletti, N Schettini, E Weeber, A Oliveros, ...
Materials Science Forum 679, 824-830, 2011
47 2011 Development of a high-growth rate 3C-SiC on Si CVD process M Reyes, Y Shishkin, S Harvey, SE Saddow
MRS Online Proceedings Library Archive 911, 2006
47 2006 Observation of the D ‐center in 6H ‐SiC p ‐n diodes grown by chemical vapor deposition MS Mazzola, SE Saddow, PG Neudeck, VK Lakdawala, S We
Applied physics letters 64 (20), 2730-2732, 1994
47 1994 Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of Microelectromechanical Systems 20 (3), 745-752, 2011
46 2011 A comprehensive study of hydrogen etching on the major SiC polytypes and crystal orientations CL Frewin, C Coletti, C Riedl, U Starke, SE Saddow
Materials science forum 615, 589-592, 2009
45 2009 Wide-range (0.33%–100%) 3C–SiC resistive hydrogen gas sensor development TJ Fawcett, JT Wolan, RL Myers, J Walker, SE Saddow
Applied Physics Letters 85 (3), 416-418, 2004
38 2004 Method of crystal growth and resulted structures M Mynbaeva, D Tsvetkov, V Dmitriev, A Lebedev, N Savkina, A Syrkin, ...
US Patent 6,579,359, 2003
38 2003 Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers SE Saddow, TE Schattner, J Brown, L Grazulis, K Mahalingam, G Landis, ...
Journal of electronic materials 30 (3), 228-234, 2001
38 2001 
Christopher L. FrewinUniversity of Texas at DallasAdresse e-mail validée de UTDallas.edu
