stephen edward saddow
stephen edward saddow
Department of Electrical Engineering, University of South Florida
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Advances in silicon carbide processing and applications
SE Saddow, AK Agarwal
Artech House, 2004
Electrical performance of gate dielectric films deposited by atomic layer deposition on
CM Tanner, YC Perng, C Frewin, SE Saddow, JP Chang
Applied Physics Letters 91 (20), 203510, 2007
Silicon carbide: a versatile material for biosensor applications
A Oliveros, A Guiseppi-Elie, SE Saddow
Biomedical microdevices 15 (2), 353-368, 2013
4H–SiC photoconductive switching devices for use in high-power applications
S Doǧan, A Teke, D Huang, H Morkoç, CB Roberts, J Parish, B Ganguly, ...
Applied physics letters 82 (18), 3107-3109, 2003
Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates
M Mynbaeva, SE Saddow, G Melnychuk, I Nikitina, M Scheglov, ...
Applied Physics Letters 78 (1), 117-119, 2001
Biocompatibility and wettability of crystalline SiC and Si surfaces
C Coletti, MJ Jaroszeski, A Pallaoro, AM Hoff, S Iannotta, SE Saddow
2007 29th Annual International Conference of the IEEE Engineering in …, 2007
High growth rates (> 30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor
RL Myers, Y Shishkin, O Kordina, SE Saddow
Journal of Crystal Growth 285 (4), 486-490, 2005
Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors
KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
Atomic force microscopy analysis of central nervous system cell morphology on silicon carbide and diamond substrates
CL Frewin, M Jaroszeski, E Weeber, KE Muffly, A Kumar, M Peters, ...
Journal of Molecular Recognition: An Interdisciplinary Journal 22 (5), 380-388, 2009
Heteroepitaxy of -SiC on different on-axis oriented silicon substrates
R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ...
Journal of Applied Physics 105 (8), 084910, 2009
Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via
Diamond and related materials 18 (12), 1440-1449, 2009
Increased growth rate in a SiC CVD reactor using HCl as a growth additive
RL Myers-Ward, O Kordina, Z Shishkin, SP Rao, R Everly, SE Saddow
Materials Science Forum 483, 73-76, 2005
Single-crystal silicon carbide: A biocompatible and hemocompatible semiconductor for advanced biomedical applications
SE Saddow, CL Frewin, C Coletti, N Schettini, E Weeber, A Oliveros, ...
Materials Science Forum 679, 824-830, 2011
Development of a high-growth rate 3C-SiC on Si CVD process
M Reyes, Y Shishkin, S Harvey, SE Saddow
MRS Online Proceedings Library Archive 911, 2006
Observation of the D‐center in 6H‐SiC pn diodes grown by chemical vapor deposition
MS Mazzola, SE Saddow, PG Neudeck, VK Lakdawala, S We
Applied physics letters 64 (20), 2730-2732, 1994
Advanced residual stress analysis and FEM simulation on heteroepitaxial 3C–SiC for MEMS application
R Anzalone, G D'arrigo, M Camarda, C Locke, SE Saddow, F La Via
Journal of Microelectromechanical Systems 20 (3), 745-752, 2011
A comprehensive study of hydrogen etching on the major SiC polytypes and crystal orientations
CL Frewin, C Coletti, C Riedl, U Starke, SE Saddow
Materials science forum 615, 589-592, 2009
Wide-range (0.33%–100%) 3C–SiC resistive hydrogen gas sensor development
TJ Fawcett, JT Wolan, RL Myers, J Walker, SE Saddow
Applied Physics Letters 85 (3), 416-418, 2004
Method of crystal growth and resulted structures
M Mynbaeva, D Tsvetkov, V Dmitriev, A Lebedev, N Savkina, A Syrkin, ...
US Patent 6,579,359, 2003
Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers
SE Saddow, TE Schattner, J Brown, L Grazulis, K Mahalingam, G Landis, ...
Journal of electronic materials 30 (3), 228-234, 2001
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