Intrinsic charge trapping in amorphous oxide films: status and challenges J Strand, M Kaviani, D Gao, AM El-Sayed, VV Afanas’ev, AL Shluger
Journal of Physics: Condensed Matter 30 (23), 233001, 2018
78 2018 Mechanisms of oxygen vacancy aggregation in SiO2 and HfO2 DZ Gao, J Strand, MS Munde, AL Shluger
Frontiers in Physics 7, 43, 2019
52 2019 Intrinsic electron traps in atomic-layer deposited HfO2 insulators F Cerbu, O Madia, DV Andreev, S Fadida, M Eizenberg, L Breuil, ...
Applied Physics Letters 108 (22), 2016
52 2016 Deep electron and hole polarons and bipolarons in amorphous oxide M Kaviani, J Strand, VV Afanas' ev, AL Shluger
Physical Review B 94 (2), 020103, 2016
51 2016 Properties of intrinsic point defects and dimers in hexagonal boron nitride J Strand, L Larcher, AL Shluger
Journal of Physics: Condensed Matter 32 (5), 055706, 2019
41 2019 Intrinsic electron trapping in amorphous oxide J Strand, M Kaviani, VV Afanas’ev, JG Lisoni, AL Shluger
Nanotechnology 29 (12), 125703, 2018
35 2018 First principles calculations of optical properties for oxygen vacancies in binary metal oxides J Strand, SK Chulkov, MB Watkins, AL Shluger
The Journal of Chemical Physics 150 (4), 2019
33 2019 Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation J Strand, P La Torraca, A Padovani, L Larcher, AL Shluger
Journal of Applied Physics 131 (23), 2022
24 2022 Effect of electric field on defect generation and migration in JW Strand, J Cottom, L Larcher, AL Shluger
Physical Review B 102 (1), 014106, 2020
24 2020 Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging J Strand, OA Dicks, M Kaviani, AL Shluger
Microelectronic Engineering 178, 235-239, 2017
21 2017 Variability sources and reliability of 3D—FeFETs M Pešić, B Beltrando, A Padovani, S Gangopadhyay, M Kaliappan, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
16 2021 Defect creation in amorphous HfO2 facilitated by hole and electron injection J Strand, M Kaviani, AL Shluger
Microelectronic Engineering 178, 279-283, 2017
15 2017 Electron trapping in ferroelectric RA Izmailov, JW Strand, L Larcher, BJ O'Sullivan, AL Shluger, ...
Physical Review Materials 5 (3), 034415, 2021
14 2021 Role of long-range exact exchange in polaron charge transition levels: The case of MgO D Wing, J Strand, T Durrant, AL Shluger, L Kronik
Physical Review Materials 4 (8), 083808, 2020
9 2020 Towards a Universal Model of Dielectric Breakdown A Padovani, P La Torraca, J Strand, A Shluger, V Milo, L Larcher
2023 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2023
8 2023 Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films DZ Gao, J Strand, AM El-Sayed, AL Shluger, A Padovani, L Larcher
2018 IEEE International Reliability Physics Symposium (IRPS), 5A. 2-1-5A. 2-7, 2018
8 2018 Variability and disturb sources in ferroelectric 3D NANDs and comparison to charge-trap equivalents M Pešić, A Padovani, T Rollo, B Beltrando, J Strand, P Agrawal, A Shluger, ...
2022 IEEE International Memory Workshop (IMW), 1-4, 2022
6 2022 The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al2 O3 Layers P La Torraca, A Padovani, J Strand, A Shluger, L Larcher
IEEE Electron Device Letters, 2023
1 2023 Correlated Defect Creation in HfO2 films J Strand, A Shluger
2018 International Integrated Reliability Workshop (IIRW), 1-2, 2018
1 2018 Electron emission from deep traps in R Izmailov, J Strand, A Shluger, V Afanas' ev
Physical Review B 109 (13), 134109, 2024
2024 