| Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ... Advanced Materials 28 (9), 1818-1823, 2016 | 137 | 2016 |
| Radio Frequency Transistors and Circuits Based on CVD MoS2 A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ... Nano letters 15 (8), 5039-5045, 2015 | 130 | 2015 |
| Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ... Applied Physics Letters 106 (6), 062101, 2015 | 68 | 2015 |
| Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ... Science advances 3 (10), e1701661, 2017 | 61 | 2017 |
| Enabling real-time interference alignment: Promises and challenges K Miller, A Sanne, K Srinivasan, S Vishwanath Proceedings of the thirteenth ACM international symposium on Mobile Ad Hoc …, 2012 | 31 | 2012 |
| Embedded gate CVD MoS 2 microwave FETs A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, L Mathew, R Rao, ... npj 2D Materials and Applications 1 (1), 1-6, 2017 | 17 | 2017 |
| Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee Journal of Applied Physics 119 (12), 124502, 2016 | 14 | 2016 |
| Intra-domain periodic defects in monolayer MoS2 A Roy, R Ghosh, A Rai, A Sanne, K Kim, HCP Movva, R Dey, T Pramanik, ... Applied Physics Letters 110 (20), 201905, 2017 | 8 | 2017 |
| Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee Applied Physics Letters 104 (8), 083106, 2014 | 8 | 2014 |
| Towards mm-wave nanoelectronics and RF switches using MoS22D Semiconductor M Kim, S Park, A Sanne, SK Banerjee, D Akinwande 2018 IEEE/MTT-S International Microwave Symposium-IMS, 352-354, 2018 | 3 | 2018 |
| Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, D Akinwande, ... 2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017 | 2 | 2017 |
| State-of-the-art large area CVD MoS2 based RF electronics MN Yogeesh, A Sanne, S Park, HY Chang, R Ghosh, SK Banerjee, ... 2016 3rd International Conference on Emerging Electronics (ICEE), 1-3, 2016 | 2 | 2016 |
| Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, R Ghosh, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 2 | 2016 |
| E-mode RF transistors and circuit model using CVD MoS2 A Sanne, MN Yogeesh, S Park, R Ghosh, C Liu, L Mathew, R Rao, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 1 | 2017 |
| Radio frequency transistors and circuit applications based on CVD MoS2 A Sanne, MN Yogeesh, R Ghosh, A Rai, SH Shin, A Sharma, L Mathew, ... 2015 73rd Annual Device Research Conference (DRC), 215-216, 2015 | 1 | 2015 |
| CVD MoS₂ for high speed devices and circuits AM Sanne | | 2018 |
| CVD MoS2 for High Speed Devices and Circuits AM Sanne University of Texas, 2018 | | 2018 |
| Large Area CVD MoS2 RF transistors with GHz performance M Nagavalli Yogeesh, A Sanne, S Park, D Akinwade, S Banerjee APS March Meeting Abstracts 2017, T1. 111, 2017 | | 2017 |
| Low Power Monolayer MoS2 Transistors for RF Applications R Rao, R Ghosh, A Sanne, L Mathew, S Banerjee APPLIED NOVEL DEVICES INC AUSTIN TX, 2015 | | 2015 |
| 2D devices II A Sanne, MN Yogeesh, S Park, R Ghosh, C Liu, L Mathew, R Rao, ... | | |
rudresh ghoshUniversity of Texas at AustinAdresse e-mail validée de utexas.edu
