Flexible low-temperature polycrystalline silicon thin-film transistors TC Chang, YC Tsao, PH Chen, MC Tai, SP Huang, WC Su, GF Chen
Materials Today Advances 5, 100040, 2020
68 2020 Analysis of negative bias temperature instability degradation in p-type low-temperature polycrystalline silicon thin-film transistors of different grain sizes HY Tu, YC Tsao, MC Tai, TC Chang, YL Tsai, SP Huang, YZ Zheng, ...
IEEE Electron Device Letters 40 (11), 1768-1771, 2019
26 2019 Improvement of resistive switching characteristics in zinc oxide-based resistive random access memory by ammoniation annealing PY Wu, HX Zheng, CC Shih, TC Chang, WJ Chen, CC Yang, WC Chen, ...
IEEE Electron Device Letters 41 (3), 357-360, 2020
22 2020 A high-speed MIM resistive memory cell with an inherent vanadium selector CY Lin, YT Tseng, PH Chen, TC Chang, JK Eshraghian, Q Wang, Q Lin, ...
Applied Materials Today 21, 100848, 2020
16 2020 Hydrogen as a cause of abnormal subchannel formation under positive bias temperature stress in a-InGaZnO thin-film transistors YC Chien, YC Yang, YC Tsao, HC Chiang, MC Tai, YL Tsai, PH Chen, ...
IEEE Transactions on Electron Devices 66 (7), 2954-2959, 2019
13 2019 A Dual‐Gate InGaZnO4 ‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection PH Chen, YC Tsao, YC Chien, HC Chiang, HM Chen, YH Lu, CC Shih, ...
Advanced Materials Technologies 4 (8), 1900106, 2019
11 2019 Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions KJ Zhou, PH Chen, YZ Zheng, MC Tai, YX Wang, YT Chien, PJ Sun, ...
Journal of Materials Chemistry C 10 (24), 9192-9197, 2022
10 2022 A novel structure to reduce degradation under mechanical bending in foldable low temperature polysilicon TFTs fabricated on polyimide YX Wang, TC Chang, SP Huang, MC Tai, YZ Zheng, CC Wu, YS Shih, ...
IEEE Electron Device Letters 41 (5), 725-728, 2020
10 2020 Improving reliability of high-performance ultraviolet sensor in a-InGaZnO thin-film transistors YL Tsai, YC Chien, TC Chang, YC Tsao, MC Tai, HY Tu, JJ Chen, ...
IEEE Electron Device Letters 40 (9), 1455-1458, 2019
9 2019 Suppression of edge effect induced by positive gate bias stress in low-temperature polycrystalline silicon TFTs with channel width extension over source/drain regions YX Wang, MC Tai, TC Chang, SP Huang, YZ Zheng, CC Wu, YS Shih, ...
IEEE Transactions on Electron Devices 67 (12), 5552-5556, 2020
8 2020 Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories MC Tai, YX Wang, TC Chang, CC Lin, YF Tu, YH Hung, FM Ciou, YS Lin, ...
Advanced Electronic Materials 6 (11), 2000747, 2020
8 2020 Gate dielectric breakdown in A-InGaZnO thin film transistors with Cu electrodes MC Tai, YX Wang, TC Chang, HC Huang, CC Lin, BS Huang, HY Chang, ...
IEEE Electron Device Letters 42 (6), 851-854, 2021
7 2021 Floating top gate-induced output enhancement of a-InGaZnO thin film transistors under single gate operations MC Tai, TC Chang, MC Chen, HC Chiang, YC Tsao, YC Chien, YX Wang, ...
Applied Physics Letters 113 (17), 2018
7 2018 Full-color reflector using vertically stacked liquid crystal guided-mode resonators CT Wang, PC Chang, JJ Lin, MC Tai, YJ Hung, TH Lin
Applied Optics 56 (14), 4219-4223, 2017
7 2017 Improving breakdown voltage in AlGaN/GaN metal-insulator-semiconductor HEMTs through electric-field dispersion layer material selection YL Tsai, TC Chang, YC Tsao, MC Tai, HY Tu, YT Chien, FY Jin, HX Zheng, ...
IEEE Transactions on Device and Materials Reliability 21 (3), 320-323, 2021
6 2021 Reliability test integrating electrical and mechanical stress at high temperature for a-InGaZnO thin film transistors YC Tsao, TC Chang, SP Huang, YL Tsai, YC Chien, MC Tai, HY Tu, ...
IEEE Transactions on Device and Materials Reliability 19 (2), 433-436, 2019
6 2019 Effects of Ultraviolet Light on the Dual-Sweep 4 Thin-Film Transistor YC Tsao, TC Chang, SP Huang, YL Tsai, MC Tai, HY Tu, HC Chen, ...
IEEE Transactions on Electron Devices 66 (4), 1772-1777, 2019
6 2019 Abnormal on-current degradation under non-conductive stress in contact field plate lateral double-diffused metal-oxide-semiconductor transistor with 0.13-μm bipolar-CMOS-DMOS … WC Hung, YF Tu, TC Chang, MC Tai, YF Tan, KH Chen, CH Yeh, HY Tu, ...
IEEE Electron Device Letters 43 (5), 769-772, 2022
5 2022 Abnormal two-stage degradation on P-type low-temperature polycrystalline-silicon thin-film transistor under hot carrier conditions HY Tu, TC Chang, YC Tsao, MC Tai, YZ Zheng, YF Tu, CW Kuo, CC Wu, ...
IEEE Electron Device Letters 43 (5), 721-724, 2022
5 2022 Enhancing hot-carrier reliability of dual-gate low-temperature polysilicon TFTs by increasing lightly doped drain length JJ Chen, TC Chang, HC Chen, KJ Zhou, CW Kuo, WC Wu, HC Li, MC Tai, ...
IEEE Electron Device Letters 41 (10), 1524-1527, 2020
5 2020 
Yu-Xuan, WangInstitute of Electronics, National Yang Ming Chiao Tung UniversityAdresse e-mail validée de nycu.edu.tw
