van der Waals Heterostructures with High Accuracy Rotational Alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
520 2016 High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
255 2015 Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
206 2015 Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
198 2016 Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2014
184 2014 Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe 2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical Review Letters 116 (8), 086601, 2016
170 2016 CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
Acs Nano 5 (9), 7198-7204, 2011
142 2011 Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee
Crystals 8 (8), 316, 2018
121 2018 Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ...
Science Advances 3 (10), e1701661, 2017
110 2017 Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical Review Letters 118 (24), 247701, 2017
104 2017 Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
101 2017 Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ...
Applied Physics Letters 106 (6), 062101, 2015
95 2015 Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ...
Applied Physics Letters 102 (16), 163118, 2013
90 2013 Large effective mass and interaction-enhanced Zeeman splitting of S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ...
Physical Review B 97 (20), 201407, 2018
84 2018 Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ...
IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012
77 2012 Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
67 2015 Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano Letters 16 (8), 4975-4981, 2016
39 2016 Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ...
Applied Physics Letters 104 (22), 223111, 2014
38 2014 Visualization of Local Conductance in MoS2 /WSe2 Heterostructure Transistors D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ...
Nano letters 19 (3), 1976-1981, 2019
34 2019 In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces JH Park, HCP Movva, E Chagarov, K Sardashti, H Chou, I Kwak, KT Hu, ...
Nano letters 15 (10), 6626-6633, 2015
34 2015 
Emanuel TutucProfessor, The University of Texas at AustinAdresse e-mail validée de mer.utexas.edu
