Zefei Wu
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High quality sandwiched black phosphorus heterostructure and its quantum oscillations
X Chen, Y Wu, Z Wu, S Xu, L Wang, Y Han, W Ye, T Han, Y He, Y Cai, ...
Nature communications 6, 7315, 2015
Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus
G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ...
Nano letters 16 (12), 7768-7773, 2016
Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
Chen Xiaolong, Wu Zefei, Xu Shuigang, Wang Lin, Huang Rui, Han Yu, Ye ...
Nature Communications 6, 6088, 2015
Oxygen‐Assisted Charge Transfer Between ZnO Quantum Dots and Graphene
W Guo, S Xu, Z Wu, N Wang, MMT Loy, S Du
Small 9 (18), 3031-3036, 2013
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Shuigang Xu, Zefei Wu, Huanhuan Lu, Yu Han, Gen Long, Xiaolong Chen, Tianyi ...
2D Materials 3 (2), 021007, 2016
Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides
Zefei Wu*, Shuigang Xu*, Huanhuan Lu*, Armin Khamoshi*, Gui-Bin Liu*, Tianyi ...
Nature Communications 7, 12955, 2016
Isolation and Characterization of Few-Layer Manganese Thiophosphite
G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ...
ACS nano 11 (11), 11330-11336, 2017
van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition
S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ...
Nano letters 15 (4), 2645-2651, 2015
Twin Defect Derived Growth of Atomically Thin MoS2 Dendrites
J Wang, X Cai, R Shi, Z Wu, W Wang, G Long, Y Tang, N Cai, W Ouyang, ...
ACS nano 12 (1), 635-643, 2018
A reliable way of mechanical exfoliation of large scale two dimensional materials with high quality
L Yuan, J Ge, X Peng, Q Zhang, Z Wu, Y Jian, X Xiong, H Yin, J Han
AIP Advances 6 (12), 125201, 2016
Modifying electronic transport properties of graphene by electron beam irradiation
YH He, L Wang, XL Chen, ZF Wu, W Li, Y Cai, N Wang
Applied Physics Letters 99 (3), 033109, 2011
Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p-Type Few-Layer WSe2
Shuigang Xu, Junying Shen, Gen Long, Zefei Wu, Zhi-qiang Bao, Cheng-Cheng ...
Phys. Rev. Lett. 118 (6), 067702, 2017
Intrinsic valley Hall transport in atomically thin MoS
Z Wu*#, BT Zhou*, X Cai*, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ...
Nature communications 10, 611, 2019
Shape-Dependent Defect Structures of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition
G Zhang, J Wang, Z Wu, R Shi, W Ouyang, A Amini, BN Chandrashekar, ...
ACS Applied Materials & Interfaces, 2016
Semimetallic-to-metallic transition and mobility enhancement enabled by reversible iodine doping of graphene
Z Wu, Y Han, R Huang, X Chen, Y Guo, Y He, W Li, Y Cai, N Wang
Nanoscale 6 (21), 13196-13202, 2014
V2O5-C-SnO2 Hybrid Nanobelts as High Performance Anodes for Lithium-ion Batteries
L Zhang, M Yang, S Zhang, Z Wu, A Amini, Y Zhang, D Wang, S Bao, Z Lu, ...
Scientific reports 6, 33597, 2016
Density of states and its local fluctuations determined by capacitance of strongly disordered graphene
W Li, X Chen, L Wang, Y He, Z Wu, Y Cai, M Zhang, Y Wang, Y Han, ...
Scientific reports 3 (1), 1-6, 2013
Negative quantum capacitance induced by midgap states in single-layer graphene
L Wang, Y Wang, X Chen, W Zhu, C Zhu, Z Wu, Y Han, M Zhang, W Li, ...
Scientific reports 3 (1), 1-5, 2013
Detection of resonant impurities in graphene by quantum capacitance measurement
L Wang, X Chen, W Zhu, Y Wang, C Zhu, Z Wu, Y Han, M Zhang, W Li, ...
Physical Review B 89 (7), 075410, 2014
Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers
L Wang, X Chen, Y Wang, Z Wu, W Li, Y Han, M Zhang, Y He, C Zhu, ...
Nanoscale 5 (3), 1116-1120, 2013
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