Zefei Wu

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	Toutes	Depuis 2016
Citations	1764	1592
indice h	20	17
indice i10	35	31

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20132014201520162017201820192020202119 41 107 162 275 355 336 387 76

Coauteurs

Ning WangHong Kong University of Science and TechnologyAdresse e-mail validée de ust.hk
Shuigang XuUniversity of ManchesterAdresse e-mail validée de manchester.ac.uk
Jiang-Xiazi LinPostdoc, Brown UniversityAdresse e-mail validée de brown.edu
Xiaolong ChenDepartment of Electrical and Electronic Engineering, Southern University of Science and TechnologyAdresse e-mail validée de sustech.edu.cn
Chun ChengSouthern University of Science and Technology of ChinaAdresse e-mail validée de sustech.edu.cn
Fan ZhangThe University of Texas at DallasAdresse e-mail validée de utdallas.edu
Xiangbin CaiHong Kong University of Science and TechnologyAdresse e-mail validée de ust.hk
Liheng Anvisiting scholar, HKUSTAdresse e-mail validée de connect.ust.hk
Run ShiSouthern University of Science and Technology/Hong Kong University of Science and TechnologyAdresse e-mail validée de mail.sustech.edu.cn
Yingying Wu(吴鹦鹰)PhD, UCLAAdresse e-mail validée de ucla.edu
Jingwei Wang（王经纬）Hong Kong University of Science and TechnologyAdresse e-mail validée de connect.ust.hk
Gui-Bin Liu（刘贵斌）School of Physics, Beijing Institute of TechonlogyAdresse e-mail validée de bit.edu.cn
Meizhen HuangHong Kong University of Science and TechnologyAdresse e-mail validée de connect.ust.hk
Chao ZhuNanyang Technological UniversityAdresse e-mail validée de ntu.edu.sg
K.T. LawHong Kong University of Science and TechnologyAdresse e-mail validée de ust.hk
Cheng-Cheng Liu (刘铖铖)Beijing institute of technologyAdresse e-mail validée de bit.edu.cn
Benjamin T. ZHOUQuantum Matter Institute, University of British ColumbiaAdresse e-mail validée de ubc.ca
Jinxin Hu(胡金鑫)PhD in Physics, Hong Kong University of Science and TechnologyAdresse e-mail validée de connect.ust.hk
Junwei LiuAssistant Professor of Physics, Hong Kong University of Science and TechnologyAdresse e-mail validée de ust.hk
Qinsheng Wang (王钦生)Assistant Professor of Beijing Institute of TechnologyAdresse e-mail validée de bit.edu.cn

Zefei Wu

Hong Kong University of Science and Technology

Adresse e-mail validée de connect.ust.hk - Page d'accueil

Mesoscopic physics Van der Waals materials Valleytronics Nonlinearity


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
High quality sandwiched black phosphorus heterostructure and its quantum oscillations X Chen, Y Wu, Z Wu, S Xu, L Wang, Y Han, W Ye, T Han, Y He, Y Cai, ... Nature communications 6, 7315, 2015	386	2015
Achieving ultrahigh carrier mobility in two-dimensional hole gas of black phosphorus G Long, D Maryenko, J Shen, S Xu, J Hou, Z Wu, WK Wong, T Han, J Lin, ... Nano letters 16 (12), 7768-7773, 2016	175	2016
Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures Chen Xiaolong, Wu Zefei, Xu Shuigang, Wang Lin, Huang Rui, Han Yu, Ye ... Nature Communications 6, 6088, 2015	164*	2015
Oxygen‐Assisted Charge Transfer Between ZnO Quantum Dots and Graphene W Guo, S Xu, Z Wu, N Wang, MMT Loy, S Du Small 9 (18), 3031-3036, 2013	157	2013
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides Shuigang Xu, Zefei Wu, Huanhuan Lu, Yu Han, Gen Long, Xiaolong Chen, Tianyi ... 2D Materials 3 (2), 021007, 2016	86	2016
Even–odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides Zefei Wu, Shuigang Xu, Huanhuan Lu, Armin Khamoshi, Gui-Bin Liu*, Tianyi ... Nature Communications 7, 12955, 2016	70*	2016
Isolation and Characterization of Few-Layer Manganese Thiophosphite G Long, T Zhang, X Cai, J Hu, C Cho, S Xu, J Shen, Z Wu, T Han, J Lin, ... ACS nano 11 (11), 11330-11336, 2017	53	2017
van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition S Xu, Y Han, X Chen, Z Wu, L Wang, T Han, W Ye, H Lu, G Long, Y Wu, ... Nano letters 15 (4), 2645-2651, 2015	48	2015
Twin Defect Derived Growth of Atomically Thin MoS₂ Dendrites J Wang, X Cai, R Shi, Z Wu, W Wang, G Long, Y Tang, N Cai, W Ouyang, ... ACS nano 12 (1), 635-643, 2018	43	2018
A reliable way of mechanical exfoliation of large scale two dimensional materials with high quality L Yuan, J Ge, X Peng, Q Zhang, Z Wu, Y Jian, X Xiong, H Yin, J Han AIP Advances 6 (12), 125201, 2016	37	2016
Modifying electronic transport properties of graphene by electron beam irradiation YH He, L Wang, XL Chen, ZF Wu, W Li, Y Cai, N Wang Applied Physics Letters 99 (3), 033109, 2011	37	2011
Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p-Type Few-Layer WSe2 Shuigang Xu, Junying Shen, Gen Long, Zefei Wu, Zhi-qiang Bao, Cheng-Cheng ... Phys. Rev. Lett. 118 (6), 067702, 2017	35	2017
Intrinsic valley Hall transport in atomically thin MoS Z Wu#, BT Zhou, X Cai*, P Cheung, GB Liu, M Huang, J Lin, T Han, L An, ... Nature communications 10, 611, 2019	34	2019
Shape-Dependent Defect Structures of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition G Zhang, J Wang, Z Wu, R Shi, W Ouyang, A Amini, BN Chandrashekar, ... ACS Applied Materials & Interfaces, 2016	28	2016
Semimetallic-to-metallic transition and mobility enhancement enabled by reversible iodine doping of graphene Z Wu, Y Han, R Huang, X Chen, Y Guo, Y He, W Li, Y Cai, N Wang Nanoscale 6 (21), 13196-13202, 2014	27	2014
V₂O₅-C-SnO₂ Hybrid Nanobelts as High Performance Anodes for Lithium-ion Batteries L Zhang, M Yang, S Zhang, Z Wu, A Amini, Y Zhang, D Wang, S Bao, Z Lu, ... Scientific reports 6, 33597, 2016	26	2016
Density of states and its local fluctuations determined by capacitance of strongly disordered graphene W Li, X Chen, L Wang, Y He, Z Wu, Y Cai, M Zhang, Y Wang, Y Han, ... Scientific reports 3 (1), 1-6, 2013	25	2013
Negative quantum capacitance induced by midgap states in single-layer graphene L Wang, Y Wang, X Chen, W Zhu, C Zhu, Z Wu, Y Han, M Zhang, W Li, ... Scientific reports 3 (1), 1-5, 2013	23	2013
Detection of resonant impurities in graphene by quantum capacitance measurement L Wang, X Chen, W Zhu, Y Wang, C Zhu, Z Wu, Y Han, M Zhang, W Li, ... Physical Review B 89 (7), 075410, 2014	21	2014
Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers L Wang, X Chen, Y Wang, Z Wu, W Li, Y Han, M Zhang, Y He, C Zhu, ... Nanoscale 5 (3), 1116-1120, 2013	20	2013

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