Roger K. Lake

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Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresse e-mail validée de purdue.edu
Alexander A. BalandinDistinguished Professor of Electrical Engineering, University of California - RiversideAdresse e-mail validée de ee.ucr.edu
Darshana WickramaratneCenter for Computational Materials Science, US Naval Research LaboratoryAdresse e-mail validée de nrl.navy.mil
Mahesh NeupaneResearch Scientist, US Army Research LaboratoryAdresse e-mail validée de mail.mil
Bishwajit DebnathPhD, Electrical Engineering, University of California, Riverside; Intel CorporationAdresse e-mail validée de intel.com
Yafis BarlasUniversity of Nevada RenoAdresse e-mail validée de unr.edu
Cengiz OzkanProfessor of Mechanical EngineeringAdresse e-mail validée de engr.ucr.edu
Mihri OzkanUniversity of CaliforniaAdresse e-mail validée de ece.ucr.edu
Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State UniversityAdresse e-mail validée de ieee.org
Sean RommelProfessor, Rochester Institute of TechnologyAdresse e-mail validée de rit.edu
Kang L. WangElectrical Engineering DepartmentAdresse e-mail validée de ee.ucla.edu
Supriyo DattaProfessor, Purdue UniversityAdresse e-mail validée de purdue.edu
Alan SeabaughProfessor of Electrical Engineering, University of Notre DameAdresse e-mail validée de nd.edu
K M Masum HabibIntel Corp.Adresse e-mail validée de ee.ucr.edu
Jiadong Zang (臧佳栋)University of New HampshireAdresse e-mail validée de unh.edu
Fariborz KargarAssistant Adjunct Professor, University of California, RiversideAdresse e-mail validée de ucr.edu
Su ShanshanElectrical and Computer Engineering, University of California, RiversideAdresse e-mail validée de ucr.edu
Ferdows Zahid (ORCID:0000-0001-93...Independent University, Bangladesh (IUB)Adresse e-mail validée de iub.edu.bd
Timothy BoykinUniversity of Alabama in HuntsvilleAdresse e-mail validée de uah.edu
Tina T SalgueroDepartment of Chemistry, The University of GeorgiaAdresse e-mail validée de uga.edu

Roger K. Lake

University of California Riverside

Adresse e-mail validée de ece.ucr.edu - Page d'accueil

Semiconductor Devices semiconductor materials semiconductor physics nanoelectronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Single and multiband modeling of quantum electron transport through layered semiconductor devices R Lake, G Klimeck, RC Bowen, D Jovanovic Journal of Applied Physics 81 (12), 7845-7869, 1997	921	1997
Tin Disulfide An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics Y Huang, E Sutter, JT Sadowski, M Cotlet, OLA Monti, DA Racke, ... ACS nano 8 (10), 10743-10755, 2014	351	2014
Nonequilibrium Green’s-function method applied to double-barrier resonant-tunneling diodes R Lake, S Datta Physical Review B 45 (12), 6670, 1992	298	1992
Electronic and thermoelectric properties of few-layer transition metal dichalcogenides D Wickramaratne, F Zahid, RK Lake The Journal of chemical physics 140 (12), 124710, 2014	274	2014
Electronic properties of silicon nanowires Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck IEEE transactions on electron devices 52 (6), 1097-1103, 2005	236	2005
Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures N Gillgren, D Wickramaratne, Y Shi, T Espiritu, J Yang, J Hu, J Wei, X Liu, ... 2D Materials 2 (1), 011001, 2014	230	2014
Room temperature operation of epitaxially grown resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73 (15), 2191-2193, 1998	199	1998
Quantitative simulation of a resonant tunneling diode RC Bowen, G Klimeck, RK Lake, WR Frensley, T Moise Journal of applied physics 81 (7), 3207-3213, 1997	183	1997
Charge Density Waves in Exfoliated Films of van der Waals Materials: Evolution of Raman Spectrum in TiSe₂ P Goli, J Khan, D Wickramaratne, RK Lake, AA Balandin Nano letters 12 (11), 5941-5945, 2012	171	2012
MonolayerTransistors Beyond the Technology Road Map K Alam, RK Lake IEEE transactions on electron devices 59 (12), 3250-3254, 2012	171	2012
Quantum device simulation with a generalized tunneling formula G Klimeck, R Lake, RC Bowen, WR Frensley, TS Moise Applied physics letters 67 (17), 2539-2541, 1995	161	1995
Thermal conductivity of graphene with defects induced by electron beam irradiation H Malekpour, P Ramnani, S Srinivasan, G Balasubramanian, DL Nika, ... Nanoscale 8 (30), 14608-14616, 2016	156	2016
Thermal percolation threshold and thermal properties of composites with high loading of graphene and boron nitride fillers F Kargar, Z Barani, R Salgado, B Debnath, JS Lewis, E Aytan, RK Lake, ... ACS applied materials & interfaces 10 (43), 37555-37565, 2018	139	2018
Resonances in transmission through an oscillating barrier PF Bagwell, RK Lake Physical Review B 46 (23), 15329, 1992	133	1992
A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperature G Liu, B Debnath, TR Pope, TT Salguero, RK Lake, AA Balandin Nature nanotechnology 11 (10), 845-850, 2016	130	2016
Covalent functionalization of single walled carbon nanotubes with peptide nucleic acid: nanocomponents for molecular level electronics KV Singh, RR Pandey, X Wang, R Lake, CS Ozkan, K Wang, M Ozkan Carbon 44 (9), 1730-1739, 2006	120	2006
Thermoelectric properties of atomic quintuple thin films F Zahid, R Lake Applied Physics Letters 97 (21), 212102, 2010	114	2010
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer Y Alaskar, S Arafin, D Wickramaratne, MA Zurbuchen, L He, J McKay, ... Advanced Functional Materials 24 (42), 6629-6638, 2014	102	2014
Fundamentals of lateral and vertical heterojunctions of atomically thin materials A Pant, Z Mutlu, D Wickramaratne, H Cai, RK Lake, C Ozkan, S Tongay Nanoscale 8 (7), 3870-3887, 2016	99	2016
Observation of magnon-mediated current drag in Pt/yttrium iron garnet/Pt (Ta) trilayers JS Junxue Li, Yadong Xu, Mohammed Aldosary, Chi Tang, Zhisheng Lin, Shufeng ... Nature Communications 7, 10858, 2016	98*	2016

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