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Patrice GONON
Patrice GONON
LTM / Université Grenoble Alpes (UGA)
Adresse e-mail validée de cea.fr
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Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance
P Gonon, E Gheeraert, A Deneuville, F Fontaine, L Abello, G Lucazeau
Journal of applied physics 78 (12), 7059-7062, 1995
1791995
Resistance switching in HfO2 metal-insulator-metal devices
P Gonon, M Mougenot, C Vallée, C Jorel, V Jousseaume, H Grampeix, ...
Journal of Applied Physics 107 (7), 2010
1512010
Optical and electrical characterization of boron-doped diamond films
R Locher, J Wagner, F Fuchs, M Maier, P Gonon, P Koidl
Diamond and Related Materials 4 (5-6), 678-683, 1995
1341995
Modeling of nonlinearities in the capacitance-voltage characteristics of high-k metal-insulator-metal capacitors
P Gonon, C Vallée
Applied physics letters 90 (14), 2007
1242007
Effect of boron incorporation on the “quality” of MPCVD diamond films
E Gheeraert, P Gonon, A Deneuville, L Abello, G Lucazeau
Diamond and Related Materials 2 (5-7), 742-745, 1993
1211993
Back-end-of-line compatible conductive bridging RAM based on Cu and SiO2
Y Bernard, VT Renard, P Gonon, V Jousseaume
Microelectronic Engineering 88 (5), 814-816, 2011
1012011
Dielectric properties of epoxy/silica composites used for microlectronic packaging, and their dependence on post-curing
P Gonon, A Sylvestre, J Teysseyre, C Prior
Journal of Materials Science: Materials in Electronics 12, 81-86, 2001
1012001
Electrical properties of epoxy/silver nanocomposites
P Gonon, A Boudefel
Journal of Applied Physics 99 (2), 2006
972006
Electrical conduction and deep levels in polycrystalline diamond films
P Gonon, A Deneuville, F Fontaine, E Gheeraert
Journal of applied physics 78 (11), 6633-6638, 1995
941995
Combined effects of humidity and thermal stress on the dielectric properties of epoxy-silica composites
P Gonon, A Sylvestre, J Teysseyre, C Prior
Materials Science and Engineering: B 83 (1-3), 158-164, 2001
782001
Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors
F El Kamel, P Gonon, C Vallée
Applied Physics Letters 91 (17), 2007
632007
High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer
C Jorel, C Vallée, P Gonon, E Gourvest, C Dubarry, E Defay
Applied Physics Letters 94 (25), 2009
592009
Influence of high levels of water absorption on the resistivity and dielectric permittivity of epoxy composites
P Gonon, TP Hong, O Lesaint, S Bourdelais, H Debruyne
Polymer testing 24 (6), 799-804, 2005
592005
Water absorption in a glass-mica-epoxy composite-[I: Influence on Electrical Properties]
TP Hong, O Lesaint, P Gonon
IEEE Transactions on Dielectrics and Electrical Insulation 16 (1), 1-10, 2009
572009
Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material
T Bertaud, D Walczyk, C Walczyk, S Kubotsch, M Sowinska, T Schroeder, ...
Thin Solid Films 520 (14), 4551-4555, 2012
542012
Stress-induced leakage current and trap generation in HfO2 thin films
C Mannequin, P Gonon, C Vallée, L Latu-Romain, A Bsiesy, H Grampeix, ...
Journal of Applied Physics 112 (7), 2012
532012
Boron doped diamond films: electrical and optical characterization and the effect of compensating nitrogen
R Locher, J Wagner, F Fuchs, C Wild, P Hiesinger, P Gonon, P Koidl
Materials Science and Engineering: B 29 (1-3), 211-215, 1995
501995
Thermally stimulated currents in polycrystalline diamond films: Application to radiation dosimetry
P Gonon, S Prawer, D Jamieson
Applied physics letters 70 (22), 2996-2998, 1997
481997
Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
C Vallée, P Gonon, C Jorel, F El Kamel
Applied Physics Letters 96 (23), 2010
472010
On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
M Saadi, P Gonon, C Vallée, C Mannequin, H Grampeix, E Jalaguier, ...
Journal of Applied Physics 119 (11), 2016
462016
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