| The DC performance and RF characteristics of GaN-based HEMTs improvement using graded AlGaN back barrier and Fe/C Co-doped buffer L Yang, B Hou, F Jia, M Zhang, M Wu, X Niu, H Lu, C Shi, M Mi, Q Zhu, ... IEEE Transactions on Electron Devices 69 (8), 4170-4174, 2022 | 16 | 2022 |
| The influence of Fe doping tail in unintentionally doped GaN layer on DC and RF performance of AlGaN/GaN HEMTs F Jia, X Ma, L Yang, B Hou, M Zhang, Q Zhu, M Wu, M Mi, J Zhu, S Liu, ... IEEE Transactions on Electron Devices 68 (12), 6069-6075, 2021 | 15 | 2021 |
| High current and linearity AlGaN/GaN/-graded-AlGaN: Si-doped/GaN heterostructure for low voltage power amplifier application Q Yu, C Shi, L Yang, H Lu, M Zhang, M Wu, B Hou, F Jia, F Guo, X Ma, ... IEEE Electron Device Letters 44 (4), 582-585, 2023 | 9 | 2023 |
| High Vth and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer M Jia, B Hou, L Yang, F Jia, X Niu, J Du, Q Chang, M Zhang, M Wu, ... IEEE Electron Device Letters, 2023 | 8 | 2023 |
| Improved breakdown voltage and low damage E-mode operation of AlON/AlN/GaN HEMTs using plasma oxidation treatment S Liu, J Zhu, J Guo, K Cheng, M Mi, L Qin, J Liu, F Jia, H Lu, X Ma, Y Hao IEEE Electron Device Letters 43 (10), 1621-1624, 2022 | 6 | 2022 |
| Transducer-less thermoreflectance technique for measuring thermal properties of the buried buffer layer and interface in GaN-based HEMTs C Yuan, B Meng, Y Mao, M Wu, F Jia, L Yang, X Ma, Y Hao ACS Applied Electronic Materials 4 (12), 5984-5995, 2022 | 5 | 2022 |
| Analytical model on the threshold voltage of p-channel heterostructure field-effect transistors on a GaN-based complementary circuit platform X Niu, B Hou, L Yang, M Zhang, X Zhang, H Lu, F Jia, J Du, M Wu, F Song, ... IEEE Transactions on Electron Devices 69 (1), 57-62, 2021 | 5 | 2021 |
| High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications C Shi, L Yang, M Zhang, M Wu, B Hou, H Lu, F Jia, F Guo, W Liu, Q Yu, ... IEEE Transactions on Electron Devices 70 (5), 2241-2246, 2023 | 4 | 2023 |
| 930V and Low-Leakage Current GaN-on-Si Quasi-Vertical PiN Diode With Beveled-Sidewall Treated by Self-Aligned Fluorine Plasma F Jia, X Ma, L Yang, X Zhang, B Hou, M Zhang, M Wu, X Niu, J Du, S Liu, ... IEEE Electron Device Letters 43 (9), 1400-1403, 2022 | 4 | 2022 |
| Influence of Mg Out‐Diffusion Effect on the Threshold Voltage of GaN‐Based p‐Channel Heterostructure Field‐Effect Transistors X Niu, X Ma, M Zhang, L Yang, B Hou, M Wu, F Jia, X Zhang, C Wang, ... physica status solidi (b) 260 (5), 2200278, 2023 | 3 | 2023 |
| Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN: Fe Heterostucture L Yang, F Jia, H Lu, B Hou, M Zhang, J Du, Q Chang, L Deng, Q Yu, S Li, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment X Zhang, M Wu, B Hou, X Niu, H Lu, F Jia, M Zhang, J Du, L Yang, X Ma, ... Chinese Physics B 31 (5), 057301, 2022 | 1 | 2022 |
| Novel GaN-based double-channel p-heterostructure field-effect transistors with a p-GaN insertion layer X Niu, B Hou, M Zhang, L Yang, M Wu, X Zhang, F Jia, C Wang, X Ma, ... Chinese Physics B 32 (10), 108101, 2023 | | 2023 |
| Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate M Jia, B Hou, FC Jia, L Yang, JP Ao, XH Ma 2022 10th International Symposium on Next-Generation Electronics (ISNE), 1-3, 2023 | | 2023 |
| The Improvement Breakdown Voltage of GaN on Si Pin Diode by Stepped Sidewall Treated with Fluorine Plasma F Jia, Q Chang, X Chen, B Hou, L Yang, X Ma 2022 IEEE 2nd International Conference on Computer Systems (ICCS), 136-139, 2022 | | 2022 |
| High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching X Zhang, B Hou, F Jia, H Lu, X Niu, M Wu, M Zhang, J Du, L Yang, X Ma, ... Chinese Physics B 31 (2), 027301, 2022 | | 2022 |
Xiaohua MaXidian UniversityAdresse e-mail validée de xidian.edu.cn
