James C. M. Hwang
James C. M. Hwang
Cornell University, Dept. of Materials Science and Engineering
Adresse e-mail validée de cornell.edu
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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited as gate dielectric
PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang
Applied Physics Letters 86 (6), 063501, 2005
Dimensional resonance of the two-dimensional electron gas in selectively doped GaAs/AlGaAs heterostructures
SJ Allen Jr, HL Störmer, JCM Hwang
Physical Review B 28 (8), 4875, 1983
Fractional quantization of the Hall effect
HL Stormer, A Chang, DC Tsui, JCM Hwang, AC Gossard, W Wiegmann
Physical review letters 50 (24), 1953, 1983
2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications
Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ...
2D Materials 3 (4), 042001, 2016
Parabolic magnetoresistance from the interaction effect in a two-dimensional electron gas
MA Paalanen, DC Tsui, JCM Hwang
Physical review letters 51 (24), 2226-2229, 1983
Subband-Landau-level coupling in a two-dimensional electron gas
Z Schlesinger, JCM Hwang, SJ Allen Jr
Physical review letters 50 (26), 2098, 1983
Higher-order states in the multiple-series, fractional, quantum Hall effect
JCMH AM Chang, P Berglund, DC Tsui, HL Stormer
Physical review letters 53 (10), 997, 1984
Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches
X Yuan, JCM Hwang, D Forehand, CL Goldsmith
Microwave Symposium Digest, 2005 IEEE MTT-S International, 753-756, 2005
Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches
X Yuan, S Cherepko, J Hwang, CL Goldsmith, C Nordqusit, C Dyck
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No …, 2004
Cyclotron resonance in two dimensions
NT Z Schlesinger, SJ Allen, JCM Hwang, PM Platzman
Physical Review B 30 (1), 435, 1984
Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction
A Kastalsky, JCM Hwang
Solid state communications 51 (5), 317-322, 1984
Characterization of high‐purity Si‐doped molecular beam epitaxial GaAs
... BJ Skromme, SS Bose, B Lee, TS Low, TR Lepkowski, RY DeJule
Journal of applied physics 58 (12), 4685, 1985
Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors
CJ Wei, JCM Hwang
Microwave Theory and Techniques, IEEE Transactions on 43 (9), 2035-2040, 1995
Activation energies and localization in the fractional quantum Hall effect
GS Boebinger, HL Stormer, DC Tsui, AM Chang, JCM Hwang, AY Cho, ...
Physical Review B 36 (15), 7919, 1987
Measurement of grain boundary diffusion at low temperatures by the surface accumulation method. I. Methods and analysis
JCM Hwang, RW Balluffi
J. Appl. Phys. 50 (3), 1339-1348, 1979
0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode MOSFET
YQ Wu, WK Wang, O Koybasi, DN Zakharov, EA Stach, S Nakahara, ...
Electron Device Letters, IEEE 30 (7), 700-702, 2009
Acceleration of dielectric charging in RF MEMS capacitive switches
X Yuan, Z Peng, JCM Hwang, D Forehand, CL Goldsmith
Device and Materials Reliability, IEEE Transactions on 6 (4), 556-563, 2006
Fractional quantum Hall effect at low temperatures
AM Chang, MA Paalanen, DC Tsui, HL Störmer, JCM Hwang
Physical Review B 28 (10), 6133, 1983
Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique
PC Chao, PM Smith, SC Palmateer, JCM Hwang
Electron Devices, IEEE Transactions on 32 (6), 1042-1046, 1985
High-cycle life testing of RF MEMS switches
CL Goldsmith, DI Forehand, Z Peng, JCM Hwang, JL Ebel
IEEE MTT-S Int. Microwave Symp., 18015-1808, 2007
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