Patrick Vogt
Patrick Vogt
Privatdozent, Technische Universität Chemnitz, Institut für Physik
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Silicene: compelling experimental evidence for graphenelike two-dimensional silicon
P Vogt, P De Padova, C Quaresima, J Avila, E Frantzeskakis, MC Asensio, ...
Physical review letters 108 (15), 155501, 2012
Evidence of Dirac fermions in multilayer silicene
P De Padova, P Vogt, A Resta, J Avila, I Razado-Colambo, C Quaresima, ...
Applied Physics Letters 102 (16), 2013
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes
T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ...
Applied Physics Letters 97 (17), 2010
Atomic structures of silicene layers grown on Ag (111): scanning tunneling microscopy and noncontact atomic force microscopy observations
A Resta, T Leoni, C Barth, A Ranguis, C Becker, T Bruhn, P Vogt, ...
Scientific reports 3 (1), 2399, 2013
Synthesis and electrical conductivity of multilayer silicene
P Vogt, P Capiod, M Berthe, A Resta, P De Padova, T Bruhn, G Le Lay, ...
Applied physics letters 104 (2), 2014
Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP (001)(2× 4)
WG Schmidt, N Esser, AM Frisch, P Vogt, J Bernholc, F Bechstedt, M Zorn, ...
Physical Review B 61 (24), R16335, 2000
Various atomic structures of monolayer silicene fabricated on Ag (111)
ZL Liu, MX Wang, JP Xu, JF Ge, G Le Lay, P Vogt, D Qian, CL Gao, C Liu, ...
New Journal of Physics 16 (7), 075006, 2014
High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
M Martens, J Schlegel, P Vogt, F Brunner, R Lossy, J Würfl, M Weyers, ...
Applied Physics Letters 98 (21), 2011
The quasiparticle band dispersion in epitaxial multilayer silicene
P De Padova, J Avila, A Resta, I Razado-Colambo, C Quaresima, ...
Journal of Physics: Condensed Matter 25 (38), 382202, 2013
Presence of gapped silicene-derived band in the prototypical (3× 3) silicene phase on silver (111) surfaces
J Avila, P De Padova, S Cho, I Colambo, S Lorcy, C Quaresima, P Vogt, ...
Journal of Physics: Condensed Matter 25 (26), 262001, 2013
The metallic nature of epitaxial silicene monolayers on Ag (111)
NW Johnson, P Vogt, A Resta, P De Padova, I Perez, D Muir, EZ Kurmaev, ...
Advanced Functional Materials 24 (33), 5253-5259, 2014
InP(001)-() Surface: A Hydrogen Stabilized Structure
WG Schmidt, PH Hahn, F Bechstedt, N Esser, P Vogt, A Wange, W Richter
Physical review letters 90 (12), 126101, 2003
Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector
N Lobo, H Rodriguez, A Knauer, M Hoppe, S Einfeldt, P Vogt, M Weyers, ...
Applied Physics Letters 96 (8), 2010
Epitaxial silicene: can it be strongly strained?
G Le Lay, P De Padova, A Resta, T Bruhn, P Vogt
Journal of Physics D: Applied Physics 45 (39), 392001, 2012
Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures
P Vogt, A Mauze, F Wu, B Bonef, JS Speck
Applied Physics Express 11 (11), 115503, 2018
Faceting and metal-exchange catalysis in (010) β-Ga2O3 thin films homoepitaxially grown by plasma-assisted molecular beam epitaxy
P Mazzolini, P Vogt, R Schewski, C Wouters, M Albrecht, O Bierwagen
APL Materials 7 (2), 2019
Atomic surface structure of the phosphorous-terminated InP (001) grown by MOVPE
P Vogt, T Hannappel, S Visbeck, K Knorr, N Esser, W Richter
Physical Review B 60 (8), R5117, 1999
Near valence-band electronic properties of semiconducting (100) single crystals
A Navarro-Quezada, S Alamé, N Esser, J Furthmüller, F Bechstedt, ...
Physical Review B 92 (19), 195306, 2015
Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy
A Navarro-Quezada, Z Galazka, S Alamé, D Skuridina, P Vogt, N Esser
Applied Surface Science 349, 368-373, 2015
GaP (001) and InP (001): Reflectance anisotropy and surface geometry
N Esser, WG Schmidt, J Bernholc, AM Frisch, P Vogt, M Zorn, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
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