| Double-gate graphene nanoribbon field-effect transistor for DNA and gas sensing applications: simulation study and sensitivity analysis K Tamersit, F Djeffal IEEE Sensors Journal 16 (11), 4180-4191, 2016 | 128 | 2016 |
| Ultra-Compact Ternary Logic Gates Based on Negative Capacitance Carbon Nanotube FETs MKQ Jooq, MH Moaiyeri, K Tamersit IEEE Transactions on Circuits and Systems II: Express Briefs 68 (6), 2162-2166, 2021 | 49 | 2021 |
| Carbon Nanotube Field-Effect Transistor With Vacuum Gate Dielectric for Label-Free Detection of DNA Molecules: A Computational Investigation K Tamersit, F Djeffal IEEE Sensors Journal 19 (20), 9263-9270, 2019 | 38 | 2019 |
| Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance K Tamersit AEU-International Journal of Electronics and Communications 124, 153354, 2020 | 36 | 2020 |
| Leveraging Negative Capacitance CNTFETs for Image Processing: An Ultra-Efficient Ternary Image Edge Detection Hardware F Behbahani, MKQ Jooq, MH Moaiyeri, K Tamersit IEEE Transactions on Circuits and Systems I: Regular Papers 68 (12), 5108-5119, 2021 | 33 | 2021 |
| Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study K Tamersit AEU-International Journal of Electronics and Communications 122, 153287, 2020 | 33 | 2020 |
| A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors K Tamersit Journal of Computational Electronics 18 (4), 1214–1221, 2019 | 33 | 2019 |
| An ultra-sensitive gas nanosensor based on asymmetric dual-gate graphene nanoribbon field-effect transistor: proposal and investigation K Tamersit Journal of Computational Electronics 18 (3), 846-855, 2019 | 33 | 2019 |
| Computational Study of p-n Carbon Nanotube Tunnel Field-Effect Transistor K Tamersit IEEE Transactions on Electron Devices 67 (2), 704-710, 2020 | 32 | 2020 |
| Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode K Tamersit Superlattices and Microstructures 128, 252-259, 2019 | 32 | 2019 |
| Performance Assessment of a New Radiation Dosimeter Based on Carbon Nanotube Field-Effect Transistor: A Quantum Simulation Study K Tamersit IEEE Sensors Journal 19 (9), 3314-3321, 2019 | 32 | 2019 |
| Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors K Tamersit, MKQ Jooq, MH Moaiyeri IEEE Transactions on Electron Devices 68 (1), 376-384, 2021 | 31 | 2021 |
| Improving the performance of a junctionless carbon nanotube field-effect transistor using a split-gate K Tamersit AEU-International Journal of Electronics and Communications 115, 153035, 2020 | 31 | 2020 |
| Profound analysis on sensing performance of Nanogap SiGe source DM-TFET biosensor MK Anvarifard, Z Ramezani, IS Amiri, K Tamersit, AM Nejad Journal of Materials Science: Materials in Electronics 31 (24), 22699-22712, 2020 | 30 | 2020 |
| A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis K Tamersit, F Djeffal Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018 | 29 | 2018 |
| A computationally efficient hybrid approach based on artificial neural networks and the wavelet transform for quantum simulations of graphene nanoribbon FETs K Tamersit, F Djeffal Journal of Computational Electronics 18 (3), 813-825, 2019 | 28 | 2019 |
| A new ultra-scaled graphene nanoribbon junctionless tunneling field-effect transistor: proposal, quantum simulation, and analysis K Tamersit Journal of Computational Electronics 19 (1), 170-176, 2020 | 27 | 2020 |
| A novel band-to-band tunneling junctionless carbon nanotube field-effect transistor with lightly doped pocket: Proposal, assessment, and quantum transport analysis K Tamersit Physica E: Low-dimensional Systems and Nanostructures 128, 114609, 2021 | 26 | 2021 |
| A new pressure microsensor based on dual-gate graphene field-effect transistor with a vertically movable top-gate: Proposal, analysis, and optimization K Tamersit, M Kotti, M Fakhfakh AEU-International Journal of Electronics and Communications 124, 153346, 2020 | 26 | 2020 |
| Boosting the performance of an ultrascaled carbon nanotube junctionless tunnel field-effect transistor using an ungated region: NEGF simulation K Tamersit Journal of Computational Electronics 18 (4), 1222–1228, 2019 | 26 | 2019 |
Faycal DjeffalDepartment of Electronics, University of Batna 2Adresse e-mail validée de univ-batna2.dz
